CPH6020-TL-E - ON Semiconductor

Ordering number : ENA1548A
CPH6020
RF Transistor
http://onsemi.com
8V, 150mA, fT=16GHz, NPN Single CPH6
Features
•
•
•
Low-noise use
: NF=1.2dB typ (f=1GHz)
High cut-off frequency : fT=16GHz typ (VCE=5V)
High gain
: |S21e|2=13.5dB typ (f=1GHz)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to- Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Dissipation
VEBO
IC
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector Current
Unit
15
V
8
V
2
V
150
mA
700
mW
150
°C
--55 to +150
°C
When mounted on ceramic substrate (250mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7018A-002
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
6
5
CPH6020-TL-E
0.15
2.9
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
GT
0.05
1.6
0.2
0.6
2.8
0.2
0.6
Package Dimensions
TL
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
CPH6
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
62712 TKIM/91609AB TKIM TC-00002073 No. A1548-1/6
CPH6020
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
Gain-Bandwidth Product
hFE
fT
Forward Transfer Gain
| S21e |
Noise Figure
NF
Ratings
Conditions
min
typ
VCB=5V, IE=0A
VEB=1V, IC=0A
60
VCE=5V, IC=50mA
VCE=5V, IC=50mA
VCE=5V, IC=50mA, f=1GHz
2
Unit
max
1.0
μA
1.0
μA
150
13
16
10
13.5
GHz
dB
1.2
VCE=1V, IC=10mA, f=1GHz
1.8
dB
Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Ordering Information
Device
Package
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
CPH6020-TL-E
IC -- VCE
140
0.9mA
80
0.6mA
60
40
0.3mA
120
5V
1.2mA
100
VCE=1V
Collector Current, IC -- mA
1.5mA
120
Collector Current, IC -- mA
IC -- VBE
150
90
60
30
20
0
IB=0mA
0
2
4
6
Collector-to-Emitter Voltage, VCE -- V
hFE -- IC
3
0
8
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
IT14950
1.2
IT14951
Cre -- VCB
5
Reverse Transfer Capacitance, Cre -- pF
f=1MHz
DC Current Gain, hFE
2
VCE=5V
100
1V
7
5
3
1.0
2
3
5
7 10
2
3
5
7 100
Collector Current, IC -- mA
2
3
IT14952
3
2
1.0
7
5
0.1
2
3
5
7
1.0
2
3
Collector-to-Base Voltage, VCB -- V
5
7 10
IT14953
No. A1548-2/6
CPH6020
Cob -- VCB
2
f T -- IC
5
Gain-Bandwidth Product, f T -- GHz
Output Capacitance, Cob -- pF
f=1MHz
1.0
7
5
3
2
0.1
2
3
5
7
2
1.0
3
5
Collector-to-Base Voltage, VCB -- V
|S21e|2 -- IC
7
5
3
2
1.0
10
IT14954
2
3
5
7
3
5
7 100
2
3
IT14955
NF -- IC
4
14
2
10
Collector Current, IC -- mA
VCE=5V
f=1GHz
f=1GHz
12
10
8
6
3
2
VCE=1V
1
5V
4
2
1.0
2
3
5
7
10
2
3
5
7 100
Collector Current, IC -- mA
2
3
IT14956
PC -- Ta
800
Collector Dissipation, PC -- mW
10
7
1.0
7
Noise Figure, NF -- dB
Forward Transfer Gain, |S21e|2 -- dB
16
VCE=5V
f=1GHz
7
0
1.0
2
3
5
7
10
2
3
Collector Current, IC -- mA
5
7 100
IT14957
When mounted on ceramic substrate
(250mm2×0.8mm)
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14958
No. A1548-3/6
CPH6020
Embossed Taping Specification
CPH6020-TL-E
No. A1548-4/6
CPH6020
Outline Drawing
CPH6020-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1548-5/6
CPH6020
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PS No. A1548-6/6