RENESAS PS2535-1-V

DATA SHEET
PHOTOCOUPLER
PS2535-1,PS2535L-1
HIGH COLLECTOR TO EMITTER VOLTAGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SERIES
−NEPOC Series−
DESCRIPTION
The PS2535-1 and PS2535L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
A high withstanding voltage between the I/O, the high voltage between the collector and emitter of the transistor,
and darlington transistor output enables low-current input.
The PS2535-1 is in a plastic DIP (Dual In-line Package) and the PS2535L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
• High collector to emitter voltage (VCEO = 350 V)
PIN CONNECTION
(Top View)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 1 500 % TYP.)
<R>
• Ordering number of taping product: PS2535L-1-F3: 2 000 pcs/reel
<R>
• Safety standards
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
• UL approved: No. E72422
1
• BSI approved: No. 8221/8222
2
• DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
• Telephone, Exchange equipment
• FAX/MODEM
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PN10447EJ03V0DS (3rd edition)
Date Published November 2009 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1999, 2009
PS2535-1,PS2535L-1
<R>
PACKAGE DIMENSIONS (Unit : mm)
DIP Type
PS2535-1
4.6±0.35
6.5±0.5
4 3
1 2
3.5±0.3
3.2±0.4 4.15±0.4
7.62
0 to 15° +0.1
0.25 –0.05
1.25±0.15
0.50±0.10
0.25 M
2.54
Lead Bending Type
PS2535L-1
4.6±0.35
3
1
2
0.9±0.25
9.60±0.4
1.25±0.15
0.25 M
2.54
<R>
0.1 +0.1
–0.05
3.5±0.3
0.25 +0.1
–0.05
6.5±0.5
4
0.15
PHOTOCOUPLER CONSTRUCTION
Parameter
Unit (MIN.)
Air Distance
7 mm
Outer Creepage Distance
7 mm
Inner Creepage Distance
4 mm
Isolation Thickness
2
0.4 mm
Data Sheet PN10447EJ03V0DS
PS2535-1,PS2535L-1
<R>
MARKING EXAMPLE
No. 1 pin
Mark
2535
NJ931
N
J
Assembly Lot
9 31
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
Package
New PKG
Made in Japan
J
Data Sheet PN10447EJ03V0DS
3
PS2535-1,PS2535L-1
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Packing Style
Safety Standard
Specification
Approval
PS2535-1
PS2535-1-A
Pb-Free
Magazine case 100 pcs
PS2535L-1
PS2535L-1-A
PS2535L-1-F3
PS2535L-1-F3-A
Embossed Tape 2 000 pcs/reel
PS2535-1-V
PS2535-1-V-A
Magazine case 100 pcs
PS2535L-1-V
PS2535L-1-V-A
PS2535L-1-V-F3
PS2535L-1-V-F3-A
Standard products
(UL, BSI approved)
DIN EN60747-5-2
(VDE0884 Part2)
Embossed Tape 2 000 pcs/reel
Approved (Option)
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Forward Current (DC)
IF
50
mA
Reverse Voltage
VR
6
V
ΔPD/°C
0.7
mW/°C
PD
70
mW
IFP
0.5
A
Collector to Emitter Voltage
VCEO
350
V
Emitter to Collector Voltage
VECO
0.3
V
IC
120
mA
ΔPC/°C
2.0
mW/°C
PC
200
mW
BV
5 000
Vr.m.s.
Operating Ambient Temperature
TA
−55 to +100
°C
Storage Temperature
Tstg
−55 to +150
°C
Diode
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
*1 PW = 100 μs, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
4
Data Sheet PN10447EJ03V0DS
Application Part
*1
Number
PS2535-1
PS2535-1,PS2535L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Diode
Symbol
Conditions
Forward Voltage
VF
IF = 10 mA
Reverse Current
IR
VR = 5 V
Terminal Capacitance
Ct
V = 0 V, f = 1.0 MHz
MIN.
TYP.
MAX.
Unit
1.2
1.4
V
5
μA
15
pF
Transistor
Collector to Emitter
Dark Current
ICEO
VCE = 350 V, IF = 0 mA
Coupled
Current Transfer Ratio
*1
(IC/IF)
CTR
IF = 1 mA, VCE = 2 V
Collector Saturation
Voltage
VCE (sat)
IF = 1 mA, IC = 2 mA
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O
V = 0 V, f = 1.0 MHz
0.6
pF
*2
tr
VCC = 5 V, IC = 10 mA, RL = 100 Ω
18
μs
Rise Time
Fall Time
*2
tf
400
10
1 500
400
nA
5 500
%
1.0
V
Ω
11
5
*1 CTR rank
N : 400 to 5 500 (%)
L : 1 500 to 5 500 (%)
*2 Test circuit for switching time
Pulse input
VCC
IF
PW = 1 ms,
Duty cycle = 1/10
In monitor
VOUT
50 Ω
RL = 100 Ω
Data Sheet PN10447EJ03V0DS
5
PS2535-1,PS2535L-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
60
0.7 mW/°C
40
20
0
25
100
75
50
240
220
200
180
160
140
2.0 mW/°C
120
100
80
60
40
20
25
0
100
75
50
100
Ambient Temperature TA (°C)
Ambient Temperature TA (°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
TA = +100°C
+60°C
+25°C
50
Forward Current IF (mA)
Transistor Power Dissipation PC (mW)
80
Collector Current IC (mA)
Diode Power Dissipation PD (mW)
100
10
5
0°C
–25°C
–50°C
1
0.5
5 mA
3 mA
2 mA
50
1 mA
10
5
IF = 0.5 mA
0.1
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1
0.4
1.5
0.8
1.0
1.2
1.4
1.6
Collector Saturation Voltage VCE (sat) (V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
100 000
VCEO = 350 V
10 000
CTR = 1 068%
2 290%
4 360%
1 000
100
10
1
–50
–25
3 mA
5 mA
0
25
50
75
100
2 mA
50
1 mA
10
5
IF = 0.5 mA
1
0
1
2
3
4
Collector to Emitter Voltage VCE (V)
Ambient Temperature TA (°C)
Remark The graphs indicate nominal characteristics.
6
0.6
Forward Voltage VF (V)
Collector Current IC (mA)
Collector to Emitter Dark Current ICEO (nA)
0.7
Data Sheet PN10447EJ03V0DS
5
PS2535-1,PS2535L-1
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1.4
4 500
Normalized to 1.0
at TA = 25°C,
IF = 1 mA, VCE = 2 V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
–50
–25
0
25
75
50
VCE = 2 V
Current Transfer Ratio CTR (%)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERTURE
4 000
3 500
3 000
2 500
2 000
1 500
1 000
500
0
0.1
100
0.5
5
10
40
Forword Current IF (mA)
Ambient Temperature TA (°C)
SWITCHING TIME vs.
LORD RESISTANCE
LONG TERM CTR DEGRADATION
1 000
1.2
VCC = 10 V,
IC = 10 mA,
CTR = 1 800%
IF = 1 mA
100
tf
td
10
ts
1
TA = 25°C
1.0
tr
CTR (Relative Value)
Switching Time t ( μs)
1
0.8
TA = 60°C
0.6
0.4
0.2
0.1
10
50
100
500 1000
0.0
10
102
103
104
105
106
Time (Hr)
Load Resistance RL (Ω)
Remark The graphs indicate nominal characteristics.
Data Sheet PN10447EJ03V0DS
7
PS2535-1,PS2535L-1
TAPING SPECIFICATIONS (Unit : mm)
1.55±0.1
4.5 MAX.
10.3±0.1
1.5 +0.1
–0
16.0±0.3
2.0±0.1
4.0±0.1
1.75±0.1
Outline and Dimensions (Tape)
7.5±0.1
4.0±0.1
5.3±0.1
8.0±0.1
0.4
Tape Direction
PS2535L-1-F3
Outline and Dimensions (Reel)
2.0±0.5
R 1.0
φ 21.0±0.8
φ 100±1.0
2.0±0.5
φ 13.0±0.2
φ 330±2.0
<R>
17.5±1.0
21.5±1.0
Packing: 2 000 pcs/reel
8
Data Sheet PN10447EJ03V0DS
15.9 to 19.4
Outer edge of
flange
PS2535-1,PS2535L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature
260°C or below (package surface temperature)
• Time of peak reflow temperature
10 seconds or less
• Time of temperature higher than 220°C
60 seconds or less
• Time to preheat temperature from 120 to 180°C
120±30 s
• Number of reflows
Three
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
Package Surface Temperature T (°C)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
260°C MAX.
220°C
to 60 s
180°C
120°C
120±30 s
(preheating)
Time (s)
(2) Wave soldering
• Temperature
260°C or below (molten solder temperature)
• Time
10 seconds or less
• Preheating conditions
120°C or below (package surface temperature)
• Number of times
One (Allowed to be dipped in solder including plastic mold portion.)
• Flux
Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
• Peak temperature (lead part temperature)
350°C or below
• Time (each pins)
3 seconds or less
• Flux
Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10447EJ03V0DS
9
PS2535-1,PS2535L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
10
Data Sheet PN10447EJ03V0DS
PS2535-1,PS2535L-1
<R>
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT
Parameter
Symbol
Climatic test class (IEC 60068-1/DIN EN 60068-1)
Spec.
Unit
55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
UIORM
890
Vpeak
Upr
1 335
Vpeak
Upr
1 669
Vpeak
UTR
8 000
Vpeak
Upr = 1.5 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices)
Upr = 1.875 × UIORM, Pd < 5 pC
Highest permissible overvoltage
Degree of pollution (DIN EN 60664-1 VDE0110 Part 1)
Comparative tracking index (IEC 60112/DIN EN 60112 (VDE 0303 Part 11))
2
CTI
Material group (DIN EN 60664-1 VDE0110 Part 1)
175
III a
Storage temperature range
Tstg
–55 to +150
°C
Operating temperature range
TA
–55 to +100
°C
VIO = 500 V dc at TA = 25°C
Ris MIN.
10
12
Ω
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
10
11
Ω
Package temperature
Tsi
175
°C
Current (input current IF, Psi = 0)
Isi
400
mA
Power (output or total power dissipation)
Psi
700
mW
Ris MIN.
10
Isolation resistance, minimum value
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Isolation resistance
VIO = 500 V dc at TA = Tsi
Data Sheet PN10447EJ03V0DS
9
Ω
11
PS2535-1,PS2535L-1
• The information in this document is current as of November, 2009. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products
and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
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each NEC Electronics product before using it in a particular application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E0904E
12
Data Sheet PN10447EJ03V0DS
PS2535-1,PS2535L-1
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
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