Cree CPW3-1700S010 碳化硅肖特基二极管芯片- Z

```CPW3-1700S010–碳化硅肖特基二极管芯片
Z-Rec™ 整流器
VRRM = 1700 V
IF(AVG)= 10 A

•
•
•
•
•
•
•
Qc 芯片轮廓
= 70 nC
1700 伏肖特基整流器

CPW3-1700S010B
Al
Ni/Ag

VRRM

1700
V
VRSM

1700
V
VDC

1700
V
IF(AVG)

10
A
TJ=175˚C

IFRM

40.5
22.5
A
TC=25˚C，tP=10 mS，半正弦波，D=1
TC=110˚C，tP=10 mS，半正弦波，D=1
1
IFSM

54
36.5
A
TC=25˚C，tP=10 mS，半正弦波，D=1
TC=110˚C，tP=10 mS，半正弦波，D=1
1
-55 至
+175
˚C
TJ，Tstg

Rev. W3-1700S010

VF

1.7
3
2
3.5
V
IR

10
50
50
200
μA
VR = 1700 V TJ=25°C
VR = 1700 V TJ=175°C
QC

70
110
nC
VR = 1700 V，IF = 10 A
di/dt = 400 A/μs
TJ = 25°C
C

pF
VR = 0 V，TJ = 25°C，f = 1 MHz
VR = 200 V，TJ = 25˚C，f = 1 MHz
VR = 400 V，TJ = 25˚C，f = 1 MHz
880
80
60

IF = 10A TJ=25°C
IF = 10 A TJ=175°C

1.假定
θJ-C 热阻 1.06˚C/W 或以下

www.cree.com/power
1

20
20
0.000025
25
18
18
TJ =
TJ =
TJ =
TJ =
16
16
14
14
25°C
75°C
125°C
175°C
0.00002
20
0.000015
15
IR 反向电流 (μA)
IF 正向电流 (A)
12
12
10
10
88
66
44
0.00001
10
TJ =
TJ =
TJ =
TJ =
0.000005
5
22
00
0
0
1
1
2
2
3
4
3
4
VF 正向电压 (V)
5
5
0 0
0
0
6
6

200
200

900
900
(pF)
C 电容 C
Capacitance (pF)
800
800
700
700
600
600
500
500
400
400
300
300
200
200
100
100
00
1
1
10
10
VR 反向电压 (V)
100
100
VR Reverse Voltage (V)

CPW3-1700S010 Rev. -
TJ = 175°C
400 600 800 1000 1200 1400 1600 1800
400
600
800
1000
1200
1400
1600
1800
VR 反向电压 (V)
1000
1000
2
T = 25°C
J
25°C
TJ = 75°C
75°C
125°C
TJ = 125°C
175°C
1000
1000

3.78 X 2.68
mm

3.2 X 2.1
mm

2.5 X 1.4
mm
387 ± 10%
μm
4
μm
1.8
μm

A
3.78
D 1.40

2.68 B
2.50
C
mm

in
A
3.78
0.149
B
2.68
0.106
C
2.50
0.098
D
1.40
0.055

CPW3-1700S010B
Al
Ni/Ag

Cree, Inc. 的商标。
3
CPW3-1700S010 Rev. -

```