KSB13003CR KSB13003CR ◎ SEMIHOW REV.A0, January 2012 KSB13003CR KSB13003CR High Voltage Switch Mode Application • High voltage, High speed power switching • Suitable for Electronic Ballast up to 21W Absolute Maximum Ratings TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TJ TSTG 800 450 9 1.5 3 0.75 1.10 150 -55~150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature Electrical Characteristics 1.5 Amperes NPN Silicon Power Transistor 1.1 Watts TO-92 1. Emitter 2. Collector 3. Base 3 2 1 TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage VCBO IC=500μA, IE=0 800 V Collector-Emitter Breakdown Voltage VCEO IC=10mA, IB=0 450 V Emitter Cut-off Current IEBO VEB=9.0V, IC=0 *DC Current Gain hFE1 hFE2 VCE=10V,IC=0.4A VCE=10V,IC=1A *Collector-Emitter Saturation Voltage VCE(sat) *Base-Emitter Saturation Voltage VBE(sat) 10 ㎂ 40 - IC=0.5A,IB=0.1A IC=1.5A,IB=0.5A 0.5 1.0 V V IC=0.5A,IB=0.1A 1.0 V Cob VCB=10V, f=0.1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.1A Turn on Time ton Storage Time tstg Fall Time tF Output Capacitance 20 6 ㎊ 21 ㎒ 4 Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125Ω 1.1 ㎲ 4.0 ㎲ 0.7 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. hFE1 Classification Package Mark information. R 20 ~ 30 O 25 ~ 35 Y 30 ~ 40 S CR 13003 YWW Z S YWW Z SemiHow Symbol Y; year code, WW; week code hFE1 Classification ◎ SEMIHOW REV.A0, January 2012 KSB13003CR Typical Characteristics 2.0 Vce = 10v 1.6 IB=500mA 1.2 IB=100mA 0.8 IB=50mA 0.4 IB=0mA 0.0 0 1 2 3 4 5 ◎ SEMIHOW REV.A0, January 2012 KSB13003CR Typical Characteristics 1.6 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 10 1 100m 10m RB2 = 0, IB1 = 1A VCC=10V, L = 50mH 1.4 1.2 1.0 0.8 0.6 0.4 VBE(OFF) = - 5V 0.2 0.0 1m 1 10 100 VCE[V].COLLECTOR-EMITTER VOLTAGE 1000 0 200 400 600 800 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE ◎ SEMIHOW REV.A0, January 2012 KSB13003CR Package Dimension TO-92 4.58±0.25 4.58±0.25 3° 3.71±0.2 4° 14.47±0.5 0.46±0.1 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 1.27typ Dimensions in Millimeters ◎ SEMIHOW REV.A0, January 2012 KSB13003CR Package Dimension W0 W W1 H0 H W2 H1 TO-92 TAPING D 0 F1 F2 P1 P2 P Dimension [mm] Item Symbol Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A0, January 2012