KSE772 KSE772 ◎ SEMIHOW REV.A1,Sept 2007 KSE772 KSE772 Audio Frequency Power Amplifier - Low Speed Switching - Complement to KSE882 Absolute Maximum Ratings 3 Amperes PNP Epitaxial Silicon Transistor 1.2 Watts TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TJ TSTG -40 -30 -5.0 -3.0 -7.0 -0.6 1.2 150 -55~150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) *Collector Current(Pulse) Base Current(DC) Collector Dissipation(Tc=25℃) Junction Temperature Storage Temperature SOT-89 1. Base 2. Collector 3. Emitter B C E *Plus Width≤10ms, Duty≤50% Electrical Characteristics CHARACTERISTICS TC=25℃ unless otherwise noted SYMBOL Test Condition Min Typ. Max Unit Collector Cut-off Current ICBO VCB= -30V,IE=0 -1 μA Emitter Cut-off Current IEBO VEB= -3V,IC=0 -1 μA *DC Current Gain hFE1 hFE2 VCE= -2V,IC= -20mA VCE= -2V,IC= -1A 30 60 220 160 400 *Collector-Emitter Saturation Voltage VCE(sat) IC= -2A,IB= -0.2mA -0.3 -0.5 V *Base-Emitter Saturation Voltage VBE(sat) IC= -2A,IB= -0.2mA -1.0 -2.0 V Current Gain Bandwidth Product fT VCE= -5V,IC= -0.1A 80 MHz VCB= -10V,IE=0 F=1MHz 55 ㎊ Output Capacitance Cob * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. Package Mark information. R hFE2 Classification Y 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 250 ~ 500 H772Y YWWG YWW G hFE2 Classification Y; year code, WW; week code Assembly code ◎ SEMIHOW REV.A1,Sept 2007 KSE772 Typical Characteristics ◎ SEMIHOW REV.A1,Sept 2007 KSE772 Typical Characteristics ( Continued ) ◎ SEMIHOW REV.A1,Sept 2007 KSE772 Package Dimensions SOT-89 4.15±0.2 2.5±0.2 1.4±0.1 (1.10) 1.6±0.1 0.7typ 4.5±0.2 0.46±0.06 0.38±0.03 1.5±0.2 1.5typ 1.5typ yp 5°t Dimensions in Millimeters ◎ SEMIHOW REV.A1,Sept 2007