NP82N04PDG-E1-AY - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N04PDG-E1-AY
Pure Sn (Tin)
NP82N04PDG-E2-AY
PACKING
PACKAGE
Tape
TO-263 (MP-25ZP)
800 p/reel
typ. 1.5 g
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• Low Ciss Ciss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±82
A
ID(pulse)
±328
A
Total Power Dissipation (TC = 25°C)
PT1
143
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
IAR
43
A
Drain Current (pulse)
Note1
Storage Temperature
Repetitive Avalanche Current
Note2
Note2
Repetitive Avalanche Energy
185
EAR
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.05
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18396EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006
NP82N04PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate to Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.4
1.8
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 41 A
20
47
RDS(on)1
VGS = 10 V, ID = 41 A
2.9
3.5
mΩ
RDS(on)2
VGS = 4.5 V, ID = 41 A
4.1
8.0
mΩ
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = 25 V
6000
9000
pF
Output Capacitance
Coss
VGS = 0 V
580
870
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
370
670
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 41 A
26
60
ns
VGS = 10 V
68
170
ns
RG = 0 Ω
73
150
ns
11
30
ns
150
nC
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 32 V
100
Gate to Source Charge
QGS
VGS = 10 V
19
nC
Gate to Drain Charge
QGD
ID = 82 A
32
nC
VF(S-D)
IF = 82 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 82 A, VGS = 0 V
43
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
47
nC
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
1.5
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D18396EJ1V0DS
td(on)
ton
tf
toff
NP82N04PDG
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
160
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
80
60
40
20
140
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(Pulse)
100 μs
100
ID(DC)
1 ms
10 ms
10
DC
1
Power Dissipation Limited
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
RDS(on) Limited
(at VGS = 10 V)
Rth(ch-A) = 83.3 °C/W
10
1
Rth(ch-C) = 1.05 °C/W
0.1
Single pulse
0.01
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18396EJ1V0DS
3
NP82N04PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
400
1000
VDS = 10 V
Pulsed
300
ID - Drain Current - A
ID - Drain Current - A
100
VGS = 10 V
200
4.5 V
100
TA = 85°C
125°C
150°C
10
1
175°C
−55°C
−25°C
25°C
0.1
0.01
Pulsed
0.001
0
0
0.5
1
1.5
0
2
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
1.5
1.0
VDS = VGS
ID = 250 μA
0.0
0
100
TA = −55°C
−25°C
25°C
85°C
1
0.1
1
6
5
VGS = 4.5 V
3
10 V
1
0
1
10
100
ID - Drain Current - A
10
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
4
125°C
150°C
175°C
10
ID - Drain Current - A
Pulsed
2
5
VDS = 10 V
Pulsed
0.1
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
4
100
Tch - Channel Temperature - °C
7
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
2.5
-100
2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0.5
1
Data Sheet D18396EJ1V0DS
7
ID = 82 A
6
41 A
5
4
3
2
16.4 A
1
Pulsed
0
0
5
10
15
VGS - Gate to Source Voltage - V
20
NP82N04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
8
ID = 41 A
Pulsed
6
VGS = 4.5 V
5
4
10 V
3
2
1
0
-100
Ciss
1000
0
50
100
150
0.1
200
Tch - Channel Temperature - °C
1
10
100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
Crss
VGS = 0 V
f = 1 MHz
100
-50
1000
td(off)
100
td(on)
tr
10
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
12
VDD = 32 V
20 V
8V
30
10
8
20
6
VGS
4
10
2
VDS
ID = 82 A
0
0.1
1
10
100
0
20
40
60
80
100
0
120
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
1000
100
trr - Reverse Recovery Time - ns
VGS = 10 V
IF - Diode Forward Current - A
Coss
4.5 V
10
0V
1
0.1
di/dt = 100 A/μs
VGS = 0 V
Pulsed
0.01
10
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D18396EJ1V0DS
5
VGS - Gate to Source Voltage - V
7
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP82N04PDG
PACKAGE DRAWING (Unit: mm)
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
4
15.25 ±0.5
No plating
1.35 ±0.3
TO-263 (MP-25ZP)
0.025
to 0.25
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18396EJ1V0DS
NP82N04PDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
82N04
DG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP82N04PDG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Maximum temperature (Package's surface temperature): 260°C or below
Recommended
Condition Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18396EJ1V0DS
7
NP82N04PDG
• The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1