uPA1774 DS - Renesas Electronics

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1774
SWITCHING
DUAL P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The µ PA1774 is Dual P-channel MOS Field Effect
Transistor.
8
5
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
FEATURES
• Dual chip type
• Low on-state resistance
RDS(on)1 = 250 mΩ MAX. (VGS = –10 V, ID = –2.0 A)
RDS(on)2 = 300 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A)
RDS(on)3 = 330 mΩ MAX. (VGS = –4.0 V, ID = –2.0 A)
• Low input capacitance
Ciss = 420 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1774G
Power SOP8
6.0 ±0.3
4
4.4
5.37 MAX.
0.8
0.15
+0.10
–0.05
1.44
0.05 MIN.
1.8 MAX.
1
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
–60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
m2.8
A
Note1
ID(pulse)
m18
A
Total Power Dissipation (1 unit)
Note2
PT
0.6
W
Total Power Dissipation (2 unit)
Note2
PT
0.8
W
Tch
150
°C
°C
Drain Current (pulse)
Channel Temperature
Storage Temperature
Tstg
–55 to 150
Single Avalanche Current
Note3
IAS
–2.8
A
Single Avalanche Energy
Note3
EAS
0.78
mJ
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2
2. Mounted on Glass Epoxy Board of 1600 mm x 1.6 mm. Drain pad size: 264 mm x 35 µm, TA = 25°C
3. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20→0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15380EJ2V0DS00 (2nd edition)
Date Published June 2002 NS CP(K)
Printed in Japan
©
2001
µPA1774
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = −60 V, VGS = 0 V
−10
µA
Gate Leakage Current
IGSS
VGS = m16 V, VDS = 0 V
m10
µA
VGS(off)
VDS = −10 V, ID = 1 mA
−1.5
−2.0
−2.5
V
| yfs |
VDS = −10 V, ID = −2.0 A
2.5
4.3
RDS(on)1
VGS = −10 V, ID = −2.0 A
200
250
mΩ
RDS(on)2
VGS = −4.5 V, ID = −2.0 A
230
300
mΩ
RDS(on)3
VGS = −4.0 V, ID = −2.0 A
240
330
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
S
Input Capacitance
Ciss
VDS = −10 V
420
pF
Output Capacitance
Coss
VGS = 0 V
80
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
30
pF
Turn-on Delay Time
td(on)
VDD = −30 V, ID = −2.0 A
8
ns
VGS = −10 V
5
ns
RG = 0 Ω
35
ns
8
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = −48 V
10
nC
Gate to Source Charge
QGS
VGS = −10 V
1.7
nC
Gate to Drain Charge
QGD
ID = −2.8 A
2.2
nC
VF(S-D)
IF = 2.8 A, VGS = 0 V
0.89
V
Reverse Recovery Time
trr
IF = 2.8 A, VGS = 0 V
45
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
65
µC
Body Diode Forward Voltage
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
D.U.T.
L
RL
PG
50 Ω
VDD
VGS = –20 → 0 V
RG
PG.
VGS (−)
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS (−)
−
IAS
90%
BVDSS
VDS
ID
VDS
Wave Form
τ
VDD
Starting Tch
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG.
2
IG = −2 mA
RL
50 Ω
VDD
90%
VDS
VGS (−)
0
Data Sheet G15380EJ2V0DS
10% 10%
0
td(on)
tr
ton
td(off)
tf
toff
µPA1774
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
1 .0
100
80
60
40
20
0
0 .8
2 u n it
0 .6
1 u n it
0 .4
0 .2
0 .0
0
20
40
60
80
100 120
140 160
0
20
TA - Ambient Temperature - °C
60
80
100
120
140
160
FORWARD BIAS SAFE OPERATING AREA
−100
−10
40
TA - Ambient Temperature - °C
T A = 2 5 °C
S ig le P u ls e
I D (p u ls e ) = − 1 8 A
I D (D C ) = − 2 .8 A
−1
−0.1
−0.01
R D S (on ) L im ite d
(V G S = − 1 0 V )
P W = 10 m s
100 m s
P o w e r D iss ip a tio n
L im ite d
−0.001
−0.1
−1
−10
−100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 0 0 0
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
PW = 1 ms
Rth(ch-A) = 208.3°C/W
1 0 0
1 0
1
0 .1
0 .0 1
Mounted on Glass Epoxy Board of 1600 mm2×1.6 mm
Drain Pad size:264 mm2×35 µm
0 .0 0 1
0 .0 0 0 1
Single Pulse,1unit
10 µ
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G15380EJ2V0DS
3
µPA1774
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−20
FORWARD TRANSFER CHARACTERISTICS
−100
−18
−10
−16
−14
V GS = −10 V
−4.5 V
−4 V
−12
ID - Drain Current - A
ID - Drain Current - A
V DS = − 1 0 V
P u ls e d
Pulsed
−10
−8
−6
−4
−1
−0.1
T A = 150°C
1 2 5 °C
7 5 °C
2 5 °C
-2 5 °C
−0.01
−0.001
−2
0
−1
0
−2
−3
−4
−0.0001
−5
VDS - Drain to Source Voltage - V
−2.0
−1.5
−1.0
−0.5
0
25
50
75 100 125 150 175
| yfs | - Forward Transfer Admittance - S
VGS(off) – Gate Cut-off Voltage - V
−2.5
0
1 0 .0 0
700
600
500
V G S = − 4 .0 V
− 4 .5 V
−10 V
300
200
100
0
−100
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
P u ls e d
−10
0 .1 0
0 .0 1
−0.01
−0.1
−1
−10
−100
400
P u ls e d
I D = −2 .8 A
300
200
100
ID - Drain Current - A
4
P u ls e d
V DS = − 1 0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
800
−1
T A = −2 5 °C
2 5 °C
7 5 °C
1 2 5°C
1 5 0°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
−0.1
−5
1 .0 0
Tch - Channel Temperature - °C
400
−4
1 0 0 .0 0
−3.0
-5 0 -2 5
−3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V SD = − 1 0 V
ID = − 1 m A
−3.5
−2
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
−4.0
−1
0
0
−5
−10
−15
VGS - Gate to Source Voltage - V
Data Sheet G15380EJ2V0DS
−20
µPA1774
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
500
1000
P ulsed
C iss
V G S = −4V
− 4.5 V
−10 V
400
Ciss, Coss, Crss - Capacitance - pF
300
200
C oss
100
C r ss
10
VGS = 0 V
f= 1 M H z
100
-50 -25
0
25
50
1
75 100 125 150 175
−0.1
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
V DD = − 30 V
V GS = −10 V
R G = 10 Ω
100
t d (o f f)
tf
t d (o n )
10
−100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−60
tr
ID = −2.8 A
−12
−10
−50
VDD = −48 V
−30 V
−12 V
−40
−8
VGS
−30
−6
−20
−4
−2
−10
VDS
0
0
1
−0.1
−1
−10
0
−100
2
4
6
8
10
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs. DRAIN CURRENT
1000
P u ls e d
VGS = 0 V
d i/ d t = 1 0 0 A / n s
VGS = 0 V
−10
trr - Reverse Recovery Time - ns
ISD - Diode Forward Current - A
−10
VDS - Drain to Source Voltage - V
1000
−100
−1
VGS - Gate to Drain Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
−1
−0.1
100
10
−0.01
0
−0.5
−1.0
−1.5
VSD - Source to Drain Voltage - V
1
−0.1
−1
−10
−100
IF - Drain Current - A
Data Sheet G15380EJ2V0DS
5
µPA1774
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
V DD = −30 V, RG = 25 Ω
V GS = −20 → 0 V
Starting Tch = 25°C
IAS = −2.8 A
Energy Derating Factor - %
IAS - Single Avalanche Current - A
−10
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
E AS = 0.78 mJ
−1
80
60
40
20
−0.1
0.01
0.1
1
10
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - mH
6
V DD = − 30 V
VGS =−20 → 0 V
RG = 25 Ω
I A S ≤ − 2 .8 A
Data Sheet G15380EJ2V0DS
µPA1774
[MEMO]
Data Sheet G15380EJ2V0DS
7
µPA1774
• The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4