SGC4563Z SGC4563Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4563Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Gain and RL versus Frequency Optimum Technology Matching® Applied 30 GaAs HBT 20 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C dB 0 Si BiCMOS S22 -10 SiGe HBT S11 GaAs pHEMT -20 Si CMOS -30 Si BJT Single Fixed 3V Supply No Dropping Resistor Required Patented Self-Bias Circuitry P1dB =15.6dBm at 1950MHz OIP3 =28.5dBm at 1950MHz Robust 1000V ESD, Class 1C HBM Applications S21 10 SiGe BiCMOS GaAs MESFET InGaP HBT Gain IRL ORL PA Driver Amplifier Cellular, PCS, GSM, UMTS, WCDMA IF Amplifier Wireless Data, Satellite -40 GaN HEMT 0.0 0.5 RF MEMS 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) Parameter Min. Specification Typ. Max. Unit Condition Small Signal Gain 26.5 dB Freq=500MHz 22.5 25.5 28.5 dB Freq=*850MHz 18.5 20.5 22.5 dB Freq=1950MHz Output Power at 1dB Compression 16.8 dBm Freq=500MHz 16.5 dBm Freq=850MHz 14.0 15.6 dBm Freq=1950MHz Output Third Order Intercept Point 29.5 dBm Freq=500MHz 29.5 dBm Freq=850MHz 26.0 28.5 dBm Freq=1950MHz Input Return Loss 14.0 18.0 dB Freq=1950MHz Output Return Loss 10.0 14.0 dB Freq=1950MHz Noise Figure 1.7 3.0 dB Freq=1930MHz Device Operating Voltage 3 V Device Operating Current 37 48 59 mA Thermal Resistance 120 °C/W (RTH, j-l) Junction to lead Test Conditions: VD =3.0V, ID =48mA, TL =25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS =ZL =50POUT per tone=0dBm, Application Circuit Data Unless Otherwise Noted RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS140527 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 10 SGC4563Z Absolute Maximum Ratings Parameter Max Device Current (ICE) Rating Unit 110 mA Max Device Voltage (VCE) 4 V Max RF Input Power* (See Note) 12 dBm +150 °C -55 to +105 °C +150 °C Max Junction Temp (TJ) Operating Temp Range (TL) Max Storage Temp ESD Rating - Human Body Model (HBM) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Class 1C Moisture Sensitivity Level MSL 1 *Note: Load condition 1, ZL =50; Load condition 2, ZL =10:1 VSWR Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =Source Lead Temperature Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee) Parameter Unit *100 MHz 500 MHz 850 MHz 1950 MHz *2500 MHz *3500 MHz Small Signal Gain (G) Output Third Order Intercept Point (OIP3) Output Power at 1dB Compression (P1dB) Input Return Loss (IRL) Output Return Loss (ORL) Reverse Isolation (S12) Noise Figure (NF) dB dBm dBm dB dB dB dB 27.5 30.5 16.9 23.0 26.5 28.5 1.3 26.5 29.5 16.8 18.5 19.5 29.0 1.6 25.5 29.5 16.5 29.5 20.5 28.5 1.7 20.5 28.5 15.6 18.0 14.0 23.5 1.7 18.5 25.5 14.0 14.0 12.0 22.5 1.6 15.0 22.5 11.6 17.0 9.5 20.0 2.1 Test Conditions: VD =3V, ID =48mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm TL =25°C, ZS =ZL =50, *Bias Tee Data Typical Performance with Bias Tee, VD =3V, ID =48mA OIP3 versus Frequency (0dBm/tone, 1MHz spacing) 32 20 -40°C 25°C 85°C 30 28 26 24 16 14 12 22 20 10 0.0 0.5 1.0 1.5 2.0 Frequency (GHz) 2 of 10 -40°C 25°C 85°C 18 P1dB (dBm) OIP3 (dBm) P1dB versus Frequency 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS140527 SGC4563Z Typical Performance with Bias Tee, VD =3V, ID =48mA Noise Figure versus Frequency/Temperature DCIV versus Temperature 4.0 120 100 3.0 80 2.5 ID (mA) Noise Figure (dB) 3.5 2.0 1.5 60 40 1.0 25°C 0.5 -40°C 25°C 85°C 20 85°C 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 S11 versus Frequency 2.0 2.5 3.0 3.5 4.0 S21 versus Frequency 30 0 25°C -40°C 85°C -5 26 Gain (dB) -15 -40°C 25°C 85°C 28 -10 S11 (dB) 1.5 VCE (V) Frequency (GHz) -20 24 22 20 18 -25 16 -30 14 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 Frequency (GHz) S12 versus Frequency 2.0 2.5 3.0 3.5 S22 versus Frequency 0 0 -5 -5 -10 -10 S22 (dB) S12 (dB) 1.5 Frequency (GHz) -15 -20 -15 -20 -40°C 25°C 85°C -25 -40°C 25°C 85°C -25 -30 -30 0.0 0.5 1.0 1.5 2.0 Frequency (GHz) DS140527 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 10 SGC4563Z Typical Performance with 0.5GHz to 1GHz Application Circuit, VD =3V, ID =48mA OIP3 versus Frequency (0dBm/tone, 1MHz spacing) 35 P1dB versus Frequency 20 18 P1dB (dBm) OIP3 (dBm) 33 31 29 27 16 14 12 -40°C 25°C 85°C 25 -40°C 25°C 85°C 10 0.3 0.5 0.7 0.9 1.1 0.3 0.5 Frequency (GHz) 0.7 0.9 1.1 Frequency (GHz) Noise Figure versus Frequency/Temperature POUT vs PIN @ 850MHz 19 75 17 70 15 65 13 60 11 55 3.0 50 Pout_25°C Pout_-40°C Pout_85°C Bias_25°C Bias_-40°C Bias_85°C 7 5 -20 -18 -16 -14 -12 -10 -8 -6 -4 Noise Figure (dB) 9 Bias (mA) Power Out (dBm) 2.5 2.0 1.5 1.0 45 0.5 40 0.0 -2 25°C 85°C 0.3 0.5 0.7 Power In (dBm) 0.9 1.1 Frequency (GHz) S11 versus Frequency S21 versus Frequency 0 30 -40°C 25°C 85°C -5 28 26 Gain (dB) S11 (dB) -10 -15 -20 24 22 20 18 -25 -30 14 0.0 0.2 0.4 0.6 0.8 Frequency (GHz) 4 of 10 -40°C 25°C 85°C 16 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS140527 SGC4563Z Typical Performance with 0.5GHz to 1GHz Application Circuit, VD =3V, ID =48mA S12 versus Frequency S22 versus Frequency 0 0 -40°C 25°C 85°C -5 -5 -10 S22 (dB) S12 (dB) -10 -15 -15 -20 -20 -25 -25 -30 -40°C 25°C 85°C -30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 Frequency (GHz) 0.6 0.8 1.0 1.2 Frequency (GHz) Typical Performance with 1.7GHz to 2.2GHz Application Circuit, VD =3V, ID =48mA Noise Figure versus Frequency 3.0 34 2.5 -40°C 25°C 85°C 32 2.0 OIP3 (dBm) Noise Figure (dB) OIP3 versus Frequency (0dBm/tone, 1MHz spacing) 1.5 1.0 0.5 30 28 26 25°C 85°C 0.0 24 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.8 1.0 1.2 Frequency (GHz) 80 Pout_25°C Pout_-40°C Pout_85°C Bias_25°C Bias_-40°C Bias_85°C 1.8 18 9 60 7 55 5 50 3 45 P1dB (dBm) 65 16 14 12 1 40 -18 -16 -14 -12 -10 Power In (dBm) DS140527 2.2 20 70 11 -20 2.0 75 Bias (mA) Power Out (dBm) 13 1.6 P1dB versus Frequency POUT vs PIN @ 2140MHz 17 15 1.4 Frequency (GHz) -8 -6 -4 -2 -40°C 25°C 85°C 10 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 10 SGC4563Z Typical Performance with 1.7GHz to 2.2GHz Application Circuit, VD =3V, ID =48mA S11 versus Frequency S21 versus Frequency 0 27 -40°C 25°C 85°C -5 -40°C 25°C 85°C 25 Gain (dB) S11 (dB) -10 -15 -20 23 21 19 -25 -30 17 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.8 1.0 1.2 Frequency (GHz) S12 versus Frequency 1.6 1.8 2.0 2.2 S22 versus Frequency 0 0 -40°C 25°C 85°C -5 -40°C 25°C 85°C -5 -10 -10 S22 (dB) S12 (dB) 1.4 Frequency (GHz) -15 -15 -20 -20 -25 -25 -30 -30 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.8 1.0 1.2 Frequency (GHz) 1.4 1.6 1.8 2.0 2.2 Frequency (GHz) Gain over Temperature 21.0 20.5 Gain (dB) 20.0 19.5 19.0 18.5 18.0 2GHz 17.5 -55 6 of 10 -40 25 Temperature (°C) 85 110 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS140527 SGC4563Z SOT-363 PCB Pad Layout Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. DS140527 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 10 SGC4563Z Application Schematic 500MHz to 1000MHz Evaluation Board Layout 500MHz to 1000MHz 8 of 10 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS140527 SGC4563Z Application Schematic 1700MHz to 2200MHz Evaluation Board Layout 1700MHz to 2200MHz Pin 3 Function RF IN 1,2,4, 5 6 GND DS140527 RF OUT/DC BIAS Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 10 SGC4563Z Part Identification Marking 6 5 4 1 2 3 Ordering Information 10 of 10 Ordering Code Description SGC4563Z 7” Reel with 3000 pieces SGC4563ZSQ Sample bag with 25 pieces SGC4563ZSR 7” Reel with 100 pieces SGC4563ZPCK1 500MHz to 1000MHz PCBA with 5-piece sample bag SGC4563ZPCK2 1700MHz to 2200MHz PCBA with 5-piece sample bag 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS140527