SBA4089Z SBA4089Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Optimum Technology Matching® Applied Gain and Return Loss vs Frequency GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS dB SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT IP3=33.5dBm at 1950MHz POUT =13.3dBm at -45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single Supply Patented Thermal Design Applications GaAs HBT 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 PA Driver Amplifier Cellular, PCS, GSM, UMTS S21 S22 IF Amplifier Wireless Data, Satellite Terminals S11 0 1 RF MEMS 2 3 4 Frequency (GHz) 5 6 LDMOS Parameter Small Signal Gain Min. Specification Typ. Max. Unit Condition 13.5 13.1 15.0 16.5 dB 850MHz 14.6 16.1 dB 1950MHz Output Power at 1dB Compression 19.2 dBm 850MHz 17.5 19.0 dBm 1950MHz Output Third Order Intercept Point 36.5 dBm 850MHz 31.5 33.5 dBm 1950MHz Output Power 13.3 dBm 1950MHz, -45dBc ACP IS-95 9 Forward Channels Bandwidth 4400 MHz Return Loss>10dB Input Return Loss 14.0 21.0 dB 1950MHz Output Return Loss 11.0 15.0 dB 1950MHz Noise Figure 4.8 5.8 dB 1950MHz Device Operating Voltage 4.8 5.0 5.4 V Device Operating Current 72 80 88 mA Thermal Resistance (junction to lead) 70 °C/W Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS111204 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 SBA4089Z Absolute Maximum Ratings Parameter Rating Unit Device Current (ID) 130 mA Device Voltage (VD) 6 V +17 dBm +150 °C -40 to +85 °C +150 °C Operating Dissipated Power 0.65 W Moisture Sensitivity Level MSL 2 RF Input Power Junction Temp (TJ) Operating Temp Range (TL) Storage Temp Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ -TL)/RTH, j-l and TL =TLEAD Typical Performance at Key Operating Frequencies Parameter Unit 100MHz 500MHz 850MHz 1950MHz 2400MHz Small Signal Gain dB 15.3 15.3 15.0 14.6 14.3 3500MHz 13.2 Output Third Order Intercept Point dBm 37.1 36.2 36.5 33.5 32.7 30.5 Output Power at 1dB Compression dBm 19.0 19.1 19.0 19.0 18.3 16.3 Input Return Loss dB 47 33 29 21 17.5 13.3 Output Return Loss dB 22 22 21 15 13.3 12 Reverse Isolation dB 18 18 18.7 19 19 19 Noise Figure dB 4.1 4.3 4.2 4.8 - - Test Conditions: VS =8V, ID =80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS =39, TL =25°C, ZS =ZL =50 OIP3 vs Frequency Noise Figure vs Frequency 40 7.00 38 6.00 36 34 5.00 32 dB dBm 4.00 3.00 30 28 26 2.00 +25c 1.00 -40c +25c 24 -40c 22 +85c +85c 0.00 0 0.5 1 1.5 2 2.5 3 20 3.5 0 0.5 1 Frequency(GHz) 1.5 2 Frequency (GHz) 2.5 3 3.5 P1dB vs Frequency 22 +25c 21 -40c +85c dBm 20 19 18 17 16 15 0 2 of 6 0.5 1 1.5 2 Frequency (GHz) 2.5 3 3.5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111204 SBA4089Z Preliminary Advanced Data Sheet |S21| vs. Frequency |S11| vs. Frequency 0 18 -5 16 -10 14 12 s21(dB) s11(dB) -15 -20 -25 -30 10 8 6 -35 +25c -40 -40c +85c -45 +25c 4 -40c 2 +85c 0 -50 0 1 2 3 4 Frequency (GHz) 5 0 6 1 |S12| vs. Frequency 2 3 4 Frequency (GHz) 5 6 |S22| vs. Frequency -15 0 +25c -40c -16 -5 -17 s22(dB) s12(dB) +85c -18 -10 -15 -19 -20 -20 -25 +25c -40c +85c 0 1 2 3 4 Frequency (GHz) 5 0 6 -25 -25 -30 -30 -35 -35 -40 -40 -45 -45 dBc dBc 2 3 4 Frequency (GHz) 5 6 IS-95 @ 1950MHz Adj. Channel Pwr. Vs. Channel Output Pwr. IS-95 @ 850MHz Adj. Channel Pwr. Vs. Channel Output Pwr. -50 -55 -50 -55 -60 +25c -65 -40c +85c -70 -75 -60 +25c -65 -40c -70 +85c -75 7 8 9 10 11 12 dBm DS111204 1 13 14 15 16 17 7 8 9 10 11 12 13 14 15 16 17 dBm 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 6 SBA4089Z Basic Application Circuit R BIAS VS 1 uF 1000 pF CD LC 4 1 SBA-4089 3 RF in RF out CB 2 CB Evaluation Board Layout VS 1 uF RBIAS BA4 LC 1000 pF CD CB CB Mounting Instructions: 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. Application Circuit Element Values Reference Designator 500MHz 850MHz 1950MHz 2400MHz 3500MHz CB 220pF 100pF 68pF 56pF 39pF CD 100pF 68pF 22pF 22pF 15pF LC 68nH 33nH 22nH 18nH 15nH Recommended Bias Resistor Values for ID =80mA, RBIAS =(VS -VD) /ID Supply Voltage (VS) 7.5V 8V 10V 12V RBIAS 33 39 68 91 Note: RBIAS provides DC bias stability over temperature. 4 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111204 SBA4089Z Pin 1 Function RF IN 2, 4 GND 3 RF OUT/BIAS Description RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper operation. PCB Pad Layout PCB Pad Layout Dimensions in inches [millimeters] DS111204 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 SBA4089Z Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances. Part Identification Ordering Information Part Number 6 of 6 Reel Size Devices/Reel SBA-4089 7” 1000 SBA-4089Z 7” 1000 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS111204