RFGA2012 RFGA2012 InGaP HBT Low Power Linear Amplifier InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, 8-Pin, 2mmx2mm Features High OIP3=35dBm at 1960MHz Low DC Power: 3.3V, 23mA Low NF = 1.6dB at 1960MHz 50MHz to 3000MHz Operation Power Down Capability VBIAS 7 RFOUT/VCC 3 6 NC NC 4 5 GND RFIN 2 GND Class 1C (1000V) HBM ESD Rating MSL 1 Rating Common Platform Compatible AMP 1 8 NC Applications Low Power Linear Gain Stage IF, Cellular, DCS, PCS, UMTS, WLAN, WiMax, TD-SCDMA, LTE Amplifiers Low Power LNA Functional Block Diagram Product Description The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation. Ordering Information RFGA2012SR RFGA2012SQ RFGA2012TR7 RFGA2012TR13 RFGA2012PCK-410 RFGA2012PCK-411 7” Reel with 100 pieces 25-piece sample bag 7” Reel with 750 pieces 13” Reel with 2500 pieces 1800MHz to 2200MHz PCBA with 5-piece sample bag 2600MHz to 2700MHz PCBA with 5-piece sample bag Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS LDMOS RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. DS110215 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 12 RFGA2012 Absolute Maximum Ratings Parameter Collector-to-Emitter Voltage (VCE ) Rating Unit 5.5 V DC Supply Current (Ic) 35 mA CW Input Power, 2:1 Output VSWR, 5.0V +20 dBm CW Input Power, 2:1 Output VSWR, 5.5V +15 dBm Output Load VSWR at P3dB 5:1 dBm Operating Temperature Range (TL) -40 to +85 °C 150 °C -40 to +150 °C Operating Junction Temperature (TJ) Max Storage Temperature ESD Rating - Human Body Model (HBM) RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 1C Moisture Sensitivity Level Notes: 1. 2. 3. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. MSL 1 The maximum ratings must all be met simultaneously. PDISS =PDC +PRFIN-PRFOUT TJ=TL+ PDISS*RTH Parameter Min. Specification Typ. Max. Unit 150MHz Frequency VCC = 3.3V, ICQ = 23mA (includes IBIAS) 130 150 270 MHz Gain 25 dB Input Return Loss 14 dB Output Return Loss 14 dB 12.5 dBm OIP3 30 dBm Noise Figure 3.8 dB P1dB 900MHz Frequency 915 960 MHz 19 dB Input Return Loss 14 dB Output Return Loss 14 dB P1dB 14.5 dBm OIP3 34.5 dBm Noise Figure 2.7 dB 1960MHz Gain Input Return Loss 0dBm/tone, tone spacing = 1MHz VCC = 3.3V, ICQ = 23mA (includes IBIAS) 1800 1960 2200 MHz 14.5 dB 10 dB Output Return Loss 14.5 dB P1dB 13.5 dBm OIP3 35 dBm Noise Figure 1.6 dB 2 of 12 0dBm/tone, tone spacing = 1MHz VCC = 3.3V, ICQ = 23mA (includes IBIAS) 869 Gain Frequency Condition 0dBm/tone, tone spacing = 1MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110215 RFGA2012 Parameter Min. Specification Typ. Max. Unit 2650MHz Condition VCC = 3.3V, ICQ = 23mA (includes IBIAS) Frequency 2600 2650 2700 MHz Gain 12 dB Input Return Loss 11 dB Output Return Loss 16 dB P1dB 15 dBm OIP3 34 dBm Noise Figure 1.6 dB Operating Current (ICQ + IBIAS), Quiescent 23.0 mA Recommended Operating Voltage (VCE) 3.3 0dBm/tone, tone spacing = 1MHz Power Supply Power Down Current Thermal Resistance (RTH) DS110215 365 VCE=3.3V (includes IBIAS current ~2-3mA), per 1960 EVB 5.0 V Collector-to-Emitter operating voltage 20 A VBIAS=0.0V, VCE=3.3V C/W See RTH graph on page 3 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 12 RFGA2012 Typical Performance: 1800MHz to 2200MHz Application Circuit S11 versus Frequency S21 versus Frequency 0 18 -5 16 Gain (dB) S11 (dB) -10 -15 14 12 -20 -40°C 25°C 85°C -25 -30 1.80 1.85 1.90 10 1.95 2.00 2.05 2.10 2.15 -40°C 25°C 85°C 8 1.80 2.20 1.85 1.90 1.95 Frequency (GHz) 0 -5 -5 -10 -10 -15 -20 2.10 2.15 2.20 -40°C 25°C 85°C -15 -20 -40°C 25°C 85°C -25 -30 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 -25 -30 1.80 2.20 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 Frequency (GHz) Frequency (GHz) Rth vs. Voltage and Output Power (1960MHz) Tjmax vs. Voltage and Output Power (1960MHz) 420 180 170 400 Tmax-3.3V Tmax-4.0V Tmax-4.5V Tmax-5.0V 150 380 Rth (C/W) 160 Tjmax (C) 2.05 S22 versus Frequency 0 S22 (dB) S12 (dB) S12 versus Frequency 140 130 360 340 320 120 300 110 280 100 260 90 240 80 220 0 2 4 6 8 10 12 CW Output Power (dBm) 4 of 12 2.00 Frequency (GHz) 14 16 Rth-3.3V Rth-4.0V Rth-4.5V Rth-5.0V 0 2 4 6 8 10 12 14 16 CW Output Power (dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110215 RFGA2012 Typical Performance: 1800MHz to 2200MHz Application Circuit OIP3 versus Output Power (1960 MHz) 38 36 36 OIP3 (dBm) OIP3 (dBm) OIP3 versus Frequency (0dBm tones) 38 34 32 34 32 +25°C 30 +25°C 30 -40°C -40°C +85°C 28 1.80 +85°C 28 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 -5 -4 Frequency (GHz) -2 -1 0 1 2 3 4 5 Power Out Per Tone (dBm) P1dB versus Frequency Noise Figure versus Frequency 18 3.0 2.5 NF (dB) 16 P1dB (dBm) -3 14 2.0 1.5 12 1.0 +25°C -40°C 10 +25°C 0.5 +85°C +85°C 8 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 Frequency (GHz) 0.0 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 Frequency (GHz) Pout & Collector Current vs. Pin @ 1960MHz 18 23 Pout_25C 16 22 Pout_-40C Pout_85C 14 21 Ic_-40C 20 Ic_85C 10 19 8 18 6 17 4 16 2 15 0 14 -2 Collector Current (mA) Output Power (dBm) Ic_25C 12 13 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 Input Power (dBm) DS110215 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 12 RFGA2012 Evaluation Board Schematic 1800MHz to 2200MHz Application Circuit VBIAS VBIAS P1 1 2 3 4 GND VCC VCC C6 4.7uF C4 4.7uF HDR_1X4 GND C9 1000pF R1 160 ohm C3 1uF J1 C1 1uF 1 L2 1nH 2 RFIN R2 0.2pF C2 0.5pF 3 4 U1 NC VBIAS RFIN RFOUT/VCC NC GND NC GND 8 L1 3.3nH J2 7 RFOUT 6 C11 0.9pF 5 R4 10 ohm Evaluation Board BOM 1800MHz to 2200MHz Application Circuit Description Reference Designator Manufacturer PCB Manufacturer’s P/N GA2012410(A) Low Noise, Linear Gain Block Amplifier U1 RFMD CAP, 4.7uF, 10%, 10V, X5R, 0603 C4, C6 TDK Corporation RFGA2012 C1608X5R1A475K CAP, 1000pF, 10%, 50V, X7R, 0402 C9 Murata Electronics GRM155R71H102KA01E CAP, 1uF, 10%, 10V, X5R, 0402 C1, C3 Murata Electronics GRM155R61A105KE15D CAP, 0.5pF, +/-0.1pF, 50V, HI-Q, 0402 C2 Johanson Technology 500R07S0R5BV4TD CAP, 0.2pF, +/-0.05pF, 50V, HI-Q, 0402 R2 Johanson Technology 500R07S0R2AV4TD CAP, 0.9pF, +/-0.1pF, 50V, HI-Q, 0402 C11 Johanson Technology 500R07S0R9BV4TD IND, 1nH, +/-0.1nH, T/F, 0402 L2 Murata Electronics LQP15MN1N0B02D IND, 3.3nH, +/-0.1nH, T/F, 0402 L1 Murata Electronics LQP15MN3N3B02D RES, 160, 5%, 1/16W, 0402 R1 Kamaya, Inc RMC1/16S-161JTH RES, 10, 5%, 1/16W, 0402 R4 Kamaya, Inc RMC1/16S-100JTH CONN, SMA, END LNCH, FLT, 0.062" J1, J2 Emerson Network Power 142-0701-821 CONN, HDR, ST, PLRZD, 4-PIN, 0.100" P1 ITW Pancon MPSS100-4-C DNP C5, C7, C8, C10, C14, R3 6 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110215 RFGA2012 Evaluation Board Assembly Drawing 1800MHz to 2200MHz Application Circuit DS110215 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 12 RFGA2012 Typical Performance: 2600MHz to 2700MHz Application Circuit S11 versus Frequency S21 versus Frequency 16 0 -5 14 Gain (dB) S11 (dB) -10 -15 12 10 -20 -40°C -25 8 25°C -40°C 25°C 85°C 85°C -30 2.60 2.61 6 2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 Frequency (GHz) 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 Frequency (GHz) S12 versus Frequency S22 versus Frequency 0 0 -5 -5 -40°C 25°C 85°C -10 S22 (dB) S12 (dB) -10 -15 -20 -15 -20 -40°C -25 25°C -25 85°C -30 2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 Frequency (GHz) 8 of 12 -30 2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110215 RFGA2012 Typical Performance: 2600MHz to 2700MHz Application Circuit OIP3 versus Output Power (2650 MHz) 38 38 36 36 OIP3 (dBm) OIP3 (dBm) OIP3 versus Frequency (0dBm tones) 34 32 34 32 +25°C 30 +25°C 30 -40°C -40°C +85°C +85°C 28 2.60 2.61 28 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 -5 -4 Frequency (GHz) -2 -1 0 1 2 3 4 5 Power Out Per Tone (dBm) Noise Figure versus Frequency P1dB versus Frequency 18 3.0 2.5 NF (dB) 16 P1dB (dBm) -3 14 2.0 1.5 12 1.0 +25°C 10 +25°C -40°C 0.5 +85°C 8 2.60 2.61 +85°C 0.0 2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 Frequency (GHz) 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70 Frequency (GHz) Pout & Collector Current vs. Pin @ 2650MHz 23 16 22 14 21 12 20 10 19 8 18 6 17 Pout_25C 4 16 Pout_-40C Pout_85C 2 15 Ic_25C Ic_-40C 0 Collector Current (mA) Output Power (dBm) 18 14 Ic_85C -2 13 -12 -10 -8 -6 -4 -2 0 2 4 6 8 Input Power (dBm) DS110215 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 12 RFGA2012 Evaluation Board Schematic 2600MHz to 2700MHz Application Circuit VBIAS C6 4.7uF P1 VBIAS C4 4.7uF 1 2 3 4 GND VCC VCC R1 160 ohm HDR_1X4 C9 1000pF GND C3 1uF J1 L1 1.8nH U1 C1 1uF 1 2 RFIN 3 R2 0.2pF 4 NC VBIAS RFIN RFOUT/VCC NC GND NC GND 8 J2 7 RFOUT 6 C11 1pF 5 R4 10 ohm Evaluation Board BOM 2600MHz to 2700MHz Application Circuit Description Reference Designator Manufacturer PCB Manufacturer’s P/N GA2012411(A) Low Noise, Linear Gain Block Amplifier U1 RFMD RFGA2012 CAP, 4.7uF, 10%, 10V, X5R, 0603 C6, C4 TDK Corporation C1608X5R1A475K CAP, 1000pF, 10%, 50V, X7R, 0402 C9 Murata Electronics GRM155R71H102KA01E CAP, 1uF, 10%, 10V, X5R, 0402 C1, C3 Murata Electronics GRM155R61A105KE15D CAP, 0.2pF, +/-0.05pF, 50V, HI-Q, 0402 R2 Johanson Technology 500R07S0R2AV4TD CAP, 1pF, +/-0.1pF, 50V, HI-Q, 0402 C11 Johanson Technology 500R07S1R0BV4TD IND, 1.8nH, +/-0.1nH, T/F, 0402 L1 Murata Electronics LQP15MN1N8B02D RES, 160, 5%, 1/16W, 0402 R1 Kamaya, Inc RMC1/16S-161JTH RES, 10, 5%, 1/16W, 0402 R4 Kamaya, Inc RMC1/16S-100JTH CONN, SMA, END LNCH, FLT, 0.062" J1, J2 Emerson Network Power 142-0701-821 CONN, HDR, ST, PLRZD, 4-PIN, 0.100" P1 ITW Pancon MPSS100-4-C DNP C5, C7, C8, C10, C14, R3 10 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110215 RFGA2012 Evaluation Board Assembly Drawing 2600MHz to 2700MHz Application Circuit DS110215 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 12 RFGA2012 Pin Table and Description Pin Function 1 NC Description 2 RF IN RF Input. External DC Block is Required 3 GND Ground 4 NC 5 GND 6 NC 7 RF OUT 8 VBIAS EPAD NC No Internal Connection No Internal Connection Ground No Internal Connection RF Output, Device Collector Supply Voltage for Bias Circuit, Power-down Pin Thermal Ground. Must be Soldered to EVB Ground Plane Over a Bed of Vias. Package Drawing Dimensions in inches (millimeters) Refer to drawing posted at www.rfmd.com for tolerances BOTTOM VIEW TOP VIEW PIN #1 IDENTIFICATION PIN 1 DOT BY MARKING .600±0.050 Exp.DAP 2.000±0.050 R0.100 .350±0.050 2.000±0.050 H2 1.200±0.050 1.500 Exp.DAP Ref. Trace Code .500 Bsc .250±0.050 Trace Code to be assigned by assembly SubCon .85±.05 .152 Ref. 0.000-.050 SIDE VIEW 12 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS110215