Technical Note LTE Performance vs. Output Power Model: PMA2-162LN+ AN-60-053 LTE Base Station MMIC Amplifier Mini-Circuits PMA2-162LN+ High Dynamic Range and Super Low Noise MMIC Amplifier is designed specifically for applications which require low noise and high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM. Figure 1 PMA2-162LN + Test Board The E-PHEMT based PMA2-162LN+ provides typically +29 dBm OIP3 which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 Measurements of better than -60 dBc at +0 dBm output. The PMA2-162LN+ is characterized using a high peakto-average ratio OFDM signal used for next generation LTE within the 700MHz Downlink Band. DUT Configuration: Test Signal: Device: PMA2-162LN+ Test board, R1=267Ω. Supply Voltage: 4V, 54 mA Temperature: 25C Note: All data is referenced to the test board connectors CCDF 10% 1.0% 0.1% 0.01% 0.001% 0.0001% PAR 3.63 dB 6.67 dB 8.48 dB 10.06 dB 10.90 dB 11.05 dB CCDF: Complementary Cumulative Distribution Function PAR: Peak to Average Ratio LTE FDD Downlink (2009-3), Full filled 64 QAM,10MHz (50 RB) Fc = 700 MHz Measurement Setup DC Power Supply Vs 50 Ohm Test Cable 50 Ohm Test Cable Agilent N5182A MXG PMA2-162LN+ (Mounted on Characterization Test Board: TB‐615+) ‐ Agilent MXA Summary Data ACLR_1 vs. Output Power EVM vs. Output Power LTE 700MHz Full Filled 64 QAM Waveform 20 EVM-Avg EVM-Peak 15 EVM(%) ACLR (dBc) LTE 700MHz Full Filled 64 QAM Waveform 0 -10 -20 -30 -40 -50 -60 -70 -80 10 5 0 -5 +0 +5 +10 +15 Output Power(dBm) AN‐60‐053 Rev.: A M150261 (04/14/15) File: AN60053.doc +20 -5 +0 +5 +10 +15 Output Power(dBm) +20 Page 1 of 3 Technical Note LTE Performance vs. Output Power Model: PMA2-162LN+ AN-60-053 Table 1 Data of ACLR and EVM vs. Output Power Output Power (carrier) dBm ACLR (dBc) ACLR2 LOW 20MHz -40.0 -46.7 -50.3 -52.7 -54.9 -57.1 -59.4 -61.3 -62.7 -63.3 -63.7 -63.8 -63.8 -63.9 -63.8 -63.8 -63.8 -63.5 ACLR1 LOW 10MHz -18.7 -22.0 -25.0 -27.7 -30.4 -33.0 -35.4 -37.8 -40.1 -42.3 -44.5 -44.9 -49.3 -53.2 -56.6 -59.4 -61.3 -63.1 ACLR1 HIGH 10MHz -20.1 -23.4 -26.0 -28.7 -31.1 -33.7 -36.1 -38.5 -40.8 -43.1 -44.9 -45.3 -49.8 -53.7 -57.1 -59.8 -61.5 -63.1 EVM (%) ACLR2 HIGH 20MHz -44.2 -48.4 -50.9 -52.9 -54.9 -57.1 -59.2 -61.2 -62.6 -63.1 -63.7 -63.6 -63.8 -63.9 -63.9 -63.9 -63.7 -63.5 RMS Peak +20 47.830 129.49 +19 45.850 111.92 +18 36.940 98.66 +17 12.600 90.89 +16 6.830 23.06 +15 5.038 17.06 +14 3.797 13.11 +13 2.900 10.05 +12 2.240 7.63 +11 1.764 5.86 +10.07 1.454 5.12 +10 1.380 4.79 +8 0.915 3.25 +6 0.682 2.38 +4 0.564 1.97 +2 0.518 1.79 +0 0.493 1.82 -5 0.479 1.81 Note: For output powers less than -5dBm, ACLR measurement accuracy is limited by the dynamic range of the test equipment. Figure 2 ACLR Plot at Output Power of +10.07 dBm Figure 3 EVM Plot at Output Power of +10.07 dBm AN‐60‐053 Rev.: A M150261 (04/14/15) File: AN60053.doc Page 2 of 3 Technical Note AN-60-053 LTE Performance vs. Output Power Model: PMA2-162LN+ IMPORTANT NOTICE © 2015 Mini-Circuits This document is provided as an accommodation to Mini-Circuits customers in connection with Mini-Circuits parts only. In that regard, this document is for informational and guideline purposes only. Mini-Circuits assumes no responsibility for errors or omissions in this document or for any information contained herein. Mini-Circuits may change this document or the Mini-Circuits parts referenced herein (collectively, the “Materials”) from time to time, without notice. Mini-Circuits makes no commitment to update or correct any of the Materials, and Mini-Circuits shall have no responsibility whatsoever on account of any updates or corrections to the Materials or Mini-Circuits’ failure to do so. 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