微型电池产品目录2013_2014

“ISO
“ISO 14001”
9001”
2013 2014
www.sii-me.com
Micro-Energy Division
1-8, Nakase, Mihamaku, Chiba-shi, Chiba 261-8507, Japan
Telephone:+81-43-211-1735 Facsimile:+81-43-211-8034
Asia
Asia
2
:+852-2494-5111
:+852-2480-5479
Email:[email protected]
http://www.sih.com.hk
138
200021
:(021)-6375-6611
:(021)-6375-6727
200
27 2701-2703
104
:+886-2-2563-5001
:+886-2-2563-5580
Email:[email protected]
http://www.sii.com.tw
#507, 508, Korea City Air Terminal Bldg,
159-6, Samsung-dong, Gangnam-gu,
Seoul, 135-728 Korea
Telephone:+82-2-565-8006
Facsimile:+82-2-565-8306
http://www.sii.co.kr
North/Central/South America
Europe
Siemensstrasse 9
D-63263 Neu Isenburg, Germany
Telephone: +49-6102-297-0
Facsimile: +49-6102-297-50100
Email:[email protected]
http://www.seiko-instruments.de
2013
101 12F
21221 S. Western Ave., Suite 250,
Torrance, CA 90501, U.S.A.
Telephone: +1-310-517-7802
Facsimile: +1-310-517-7792
Email:[email protected]
http://www.sii-me.com
11
Copyright©2013 Seiko Instruments Inc. All Right Reserved.
No.BAC3008CJ-01C1309
C
M
Y
K
ESR·
CPX3225A
CPX3225A
1/3
ESR(
&
)
25
1/10
10nA
(
(
mA
mA)
CMOS IC
μW)
IC
(E2PROM)
(
1.
2.
3.
ESR(
ESR
1
)
mA
1/3
mA(
25
100mW)
3
μW
RFID
1/10
IC
10nA
RF
(
m)
CPU
DRAM
SMD
)
!
CPX3225A252D
2.6V
2.5mF
25
3.2×2.5×0.9mm
0.024g
CPX3225A752D
2.6V
7.5mF
25
3.2×2.5×0.9mm
0.024g
DIANET
SPRON
(SmCo)
Cellular phone
Car electronics
Game
Digital still camera
Notebook PC
TV
CPX3225A ...................................................... 2
............................. 4
MS
................................................ 6
TS
................................................. 10
........................................
XH
12
............................................................ 14
……...……..…..... 17
………………..…..... 20
……....... 21
XH
MS
3V
TS
1.5V1.53.0V
*
MS621FE
TS621E
2.1mm
MS518SE
1.8mm
1.4mm
MS414GE
XH414HG
1.2mm
MS412FE
MS614SE
XH311HU
XH311HG
1.1mm
0.9mm
MS920SE
TS920E
CPH3225A
Chip type
3.2mm × 2.5mm
Φ3.8mm
Φ4.8mm
Φ5.8mm
Φ6.8mm
Φ9.5mm
GPS •
4
2013-2014
RTC
VCC
VDD
CPU
SCL
SDA
RTC
S-35390A
INT1
INT2
MS414GE
3V/2.0mAh
SSP-T7-FL
MS614SE
3V/3.4mAh
VCC
:
*
MS414GEMS614SERTC
RTC
3.5
SII
3.0
SII
CMOSIC S-35390A
1.15.50.25µA
SSP-T7-FL
CL=6.0pF, R1=65kΩ max.
V
2.5
2.0
MS414GE
1.5
MS614SE
RTC
1.0
0.5
0.0
0
5,000
(hours)
10,000
1 (8,760 )
*
2013-2014
5
MS
3V
MS414GEMS412FEMS518SEMS614SEMS621FEMS920SE
•
3.3V
2.0V
•
3.3V
100
2.0V
(
100%)
•
0.0V
•
2060
MS(
·
)
• RoHS
• ULUL
File No. MH15628
UL Underwriters Laboratories Inc.
•
(
PHS
PDA)
•
*4
*6
V
V
*1
mAh
Ω
*2
mA
mA
*3
100%
*5
20%
mm
*5
g
MS414GE
3
2.8
3.3
3.1
2.0
100
0.010
0.05
50
500
4.8
1.4
0.08
MS412FE
3
2.8
3.3
3.1
1.0
100
0.010
0.10
100
1000
4.8
1.2
0.07
MS518SE
3
2.8
3.3
3.1
3.4
60
0.010
0.15
100
1000
5.8
1.8
0.13
MS614SE
3
2.8
3.3
3.1
3.4
80
0.015
0.25
100
1000
6.8
1.4
0.17
MS621FE
3
2.8
3.3
3.1
5.5
80
0.015
0.25
100
1000
6.8
2.1
0.23
MS920SE
3
2.8
3.3
3.1
11.0
35
0.050
0.80
100
1000
9.5
2.1
0.47
*1.
*2.
*3.
*4.
*5.
*6.
3.1V2.0V
50%
50%
100%20%
MS
6
2013-2014
MS
3V
MS414GE
3.5
0.05mA60
10µAc.o.v.=2.0V
3.0
10
µA
0.025mA 72
c.o.v.=2.0V
3.0
V
(V)
MS412FE
3.5
2.5
2.5
3.1V
2.0
2.0
2.8V 2.9V 3.0V
3.3V
1.5
0.0
0.5
1.0
1.5
2.0
3.3V
3.1V
2.8V
3.0V
2.9V
1.5
0.0
2.5
0.2
0.4
0.6
0.8
MS614SE
3.5
0.06mA
72
c.o.v .=2.0V
15µA
3.0
V
3.0
10µA
1.2
1.4
1.6
mAh
(mAh )
MS518SE
3.5
1.0
3.3V
2.5
3.1V
V
2.5
0.1mA
96
c.o.v .=2.0V
2.0
1.5
0.0
0.5
1.0
1.5
2.0
2.0
2.9V 3.0V
3.1V
3.3V
2.8V
2.5
3.0
2.8V
1.5
0.0
3.5
1.0
2.0
MS920SE
3.5
0.1mA
96
c.o.v .=2.0V
3.0
3.1V 3.3V
2.5
2.9V
2.0
1.5
0.0
2.8V
2.0
mAh
*c.o.v.cut
2013-2014
50µA
3.0
4.0
0.2mA
96
c.o.v .=2.0V
3.1-3.3V
2.5
2.0
3.0V
4.0
V
V
3.0
15µA
3.0V
mAh
mAh
MS621FE
3.5
2.9V
6.0
1.5
0.0
2.8V
2.0
4.0
6.0
2.9V
8.0
3.0V
10.0
12.0
mAh
off voltage
7
MS
3V
MS614SE
3.5
3.5
3.0
2.5
10µA
5µA
2.5
2.0
1.5
2.0
0.1mA
3.1V, 96
15µA
c.o.v .=1.5V
1.0
0.0
1.0
2.0
3.0
1.5
0.0
4.0
300µA
1.0
()
50µA 15µA
2.0
3.0
4.0
()
3.5
18kΩ
0.1mA3.1V, 96
15 µAc.o.v .=
0.1mA
3.1V , 96
15 µAc.o.v .= 2.0V,
3.0
V
V
3.0
100µA
mAh
mAh
3.5
3.1V , 96
c.o.v.=1.5V
V
V
3.0
0.1mA
2.5
30
180
2.0
1.5
0.0
1.0
2.0
2.5
−20
2.0
90
3.0
1.5
0.0
4.0
25
1.0
mAh
3.5
3.0
60
0
2.0
3.0
40
4.0
mAh)
(60)
(603.1V)
3.5
0.1mA3.1V, 96
15 µAc.o.v .=
3.0
0.1mA3.1V, 96
15 µAc.o.v .= 2.0V
V
20
2.5
2.5
V
20
150
200
2.0
1.5
0.0
1.0
8
100
2.0
mAh
150
200
2.0
80
3.0
)
60
4.0
1.5
0.0
1.0
100
2.0
40
60
80
3.0
mAh)
2013-2014
4.0
MS
3V
4.8
1.6±0.5
1.6±0.5
(Sn)
(Sn
0.5±0.1
1±0.3
2±0.3
2±0.3
+0.3
6.8
2.5 -0.5
1.8±0.5
5.8
MS920SE FL27E
MS621FE FL11E
0
-1.0
0.5±0.2
0.5±0.2
0.5±0.2
2±0.3
0.5±0.2
1±0.3
2±0.3
12.8
2.1±0.5
(3.3)
2.8
0.15±0.02
2.1±0.2
2.5±0.3
1.8±0.5
1.8±0.5
1.7±0.5
• (Sn
2013-2014
(Sn)
9.5
6.8
(Sn)
(Sn)
)
)
2.7
(Sn
(Sn
0.15±0.02
1.6±0.5
1.8
0.5±0.1
2.1±0.4
2.1
2.2±0.3
0.1±0.02
1±0.3
0.5±0.1
0.5±0.1
0.1±0.02
1.75±0.1
)
MS614SE FL28E
MS518SE FL35E
• mm
1.6
0.1±0.02
1.65
2.2±0.5
4.8
2.2±0.5
2±0.3
0.5±0.1
0.5±0.1
2±0.3
1±0.3
0.5±0.1
0.5±0.1
1.75±0.1
0.1±0.02
1.75±0.1
1±0.3
MS412FE FL26E
MS414GE FL26E
1.7±0.5
(Sn)
100%)
9
TS
<
>
1.5V
TS920E / TS621E ()
•
•
•
RoHS
•
TS
(
20%)
2.0V
1.5V
*3
TS920E
(
1000
TS621E
)
V
V
V
mAh
1.5
1.6 3.0
5.5
(2.3-1.0)
1.5
1.6 3.0
*1
*2
Ω
mA
20
0.05
1000 (20%
100 (100%
)
)
mm
mm
g
9.5
2.0
0.46
6.8
2.1
*1.
*2. 50%
*3.
TS
TS920E
2.5
V
2.0
1.5
1.0
0.5
0.0
0
200µA 2.3V 72
50µA c.o.v.=0.7V
1
2
3
4
5
6
mAh
*c.o.v.cut
10
off voltage
2013-2014
TS
1.5V
7
7
6
6
5
5
4
mAh
mAh
TS920E
4
3
3
2
200μA
1
2
72
50μA c.o.v.=1.0V
0
1.0
1.5
2.0
200μA
1
2.5
-10
10
30
120
100
100
80
80
%
120
%
50
70
℃
V
60
60
40
40
60℃
200μA
20
0
72
50μA c.o.v.=1.0V
0
-30
3.0
2.3V
2.3V
20
72
50μA c.o.v.=1.0V
0
20
40
60
60℃
200μA
100
120
0
2.3V
72
50μA c.o.v.=1.0V
0
80
2.3V
20
40
60
80
100
120
TS920E FL27E
0
-1.0
0.5±0.2
0.5±0.2
2±0.3
12.8
2.7
(3.3)
0.15±0.02
2.1±0.5
1.8±0.5
9.5
(Sn)
1.7±0.5
(Sn)
• mm
• (Sn
2013-2014
100%)
11
CPH
CPH3225A
•
•
• :
(260
)
• :
• :()
•
20+60
CPH3225A
• RoHS
3.2
2.5mm
0.9mm
85
260
PC
IC
*
V
CPH3225A
× ×
mm
Ω
4.6µAh 3.3V-1.8V
0.011F
3.3
160
g
3.2×2.5×0.9
0.025
*.
1(Ripple)
2
(Ripple) (
)
3
(
3.5
3.0
V
2.5
2.0
1.5
1.0
1mA 3.3V 120
0.5
0.0
5µAc.o.v.=0V
0
2
4
6
8
10
µAh
*c.o.v.cut
12
off voltage
2013-2014
)
120
120
100
100
80
80
60
60
40
10mA3.3V
20
0
%
%
CPH
5µAc.o.v.=2.0V
0
1
10
100
90%RH
40
60℃90%RH3.3V
20
1mA 3.3V 120
5µAc.o.v.=2.0V
0
1000
60,
0
5
10
15
20
()
270
260°C
250
5
200
°C
°C
260
150
240
200°C
100
230
50
0
250
0
50
100
150
200
250
220
300
0
10
20
30
40
50
60
70
200°C
2
260°C
5
CPH3225A
3.6
1.4
2.5±0.1
1.4
0.2
1.4
1.4
(±0.05)
0.9±0.1
3.2±0.1
1.0±0.15
(0.15)
1.0±0.1
1.0±0.1
(0.15)
1.0±0.15
• mm
2013-2014
13
XH
XH311HGXH311HUXH414HG
• :
(260
)
• 0V3.3V
• :4140.08F
• :
1
• :()
•
2060
XH
RoHS
•
3V
P
HS
PDA
(
)*1
*2
XH311HG
XH311HU
XH414HG
V
F
Ω
mm
mm
3.3
3.3
3.3
0.02
0.035
0.08
300
150
100
3.8
3.8
4.8
1.1
1.1
1.4
g
0.04
0.04
0.06
*1. =233
*2.
1(Ripple)
XH311HG
XH311HU
3.5
2.5
2.5
2.0
500μA 3.3V 1
5μA c.o.v.=0V
3.0
2.5
500μA3.3V5
5μAc.o.v.=0V
2.0
V
3.0
V
V
3.0
1.5
1.0
1.0
1.0
0.5
0.5
0.5
0.0
0.0
5
10
15
μAh
*c.o.v.cut
20
25
30
0
10
20
μ
Ah
30
40
50
500μA3.3V5
20μAc.o.v.=0V
2.0
1.5
1.5
)
XH414HG
3.5
3.5
0
(
(Ripple) (
)
14
3
2
0.0
0
20
40
60
80
μAh
off voltage
2013-2014
100
XH
XH414HG
35
120
30
100
µAh
%
25
20
60
15
40
10
500µA 3.3V
10µAc.o.v.=2.0V
5
0
80
0
10
20
20
30
0
40
500µA 3.3V 5
Ac.o.v.=2.0V
µ
0
20
40
60
100
100
80
80
60,
100
50%RH
%
120
%
120
80
A
µ
60
60
40
40
20
20
500µA 3.3V 5
10µAc.o.v.=2.0V
0
–40
–20
0
°C
20
40
60°C
60
0
80
50%RH
3.3V
500µA3.3V5
10µAc.o.v.=2.0V
0
7
14
21
28
35
42
()
270
200
150
5
250
240
200°C
100
230
50
0
260°C
260
°C)
°C)
250
0
50
100
150
200
250
300
220
0
10
20
30
40
50
60
70
200℃
260°C
2013-2014
15
XH
2.1
1.5
3.8
2.8
4.2
1
05
0.
2±
1.
1.5
45°
2.1
XH311HG IV07E
XH311HU IV07E
1.4±0.1
(Sn)
0.7±0.5
1.9±0.2
2.4±0.1
0.6±0.1
0.1±0.02
1.5
0.2±0.1
(±0.05)
(Sn)
0.8±0.4
1.9±0.2
0.9
1.9±0.2
0.9
1.9±0.2
XH414HG IV01E
45°
4.8
4.1
±0.05)
0.8±0.5
(Sn
0.1±0.02
0.1
0.2 0
1±0.1
• mm
• (Sn
16
1.24
1.24
2.4±0.2
2.4±0.2
(Sn
1±0.5
)
2.4±0.2
3.5±0.1
2.4±0.2
1.67±0.1
)
(
1.7
2.4
2.7
5.4
6
2.
2.7
2.4
100%)
2013-2014
/
/
Fax: 021-6375-6727
(+86-21-6375-6727)
1.
2.
3.
4.
5.
V
6.
V
mA
μA
7.
V
8.
/
9.
Vf
(10μA
)
V
10.
Ω
11.
12.
13.
14.
(
)
15.
E-mail
2013-2014
17
MEMO
18
2013-2014
MEMO
2013-2014
19
Seiko Instruments Inc.
Seiko Instruments Inc.
.
.
.
.
.
.
1
•
100%()
I S O14021
I I(
)
2006
36SII
2
• 19971550,300
CO2
60,000
1997
55,000
(
)
50,000
45,000
40,000
35,000
30,000
25,000
20,000
15,000
10,000
5,000
0
97
98
99
00
01
02
03
04
05
06
07
08
09
10
11
12
13
33R
•
2004
1997
1%
80
70
60
50
40
30
20
10
0
4
5
6
7
20
97
98
99
00
01
02
03
04
05
06
07
08
09
10
11
12
13
•
•
•
•
2013-2014
(MSTS)
(
0 V
(
2
(ICAO)
(
7.4. І)
2013-2014
(
(
)
)
)
2
(IATA)
(DOT)
(
)
(
)
2.5kg
(IMO)
)
(
)
1.2m
)
(IATA
21
为
保
，
的
(XH, CPH, CPX)
(
)
(
)
0 V
)
2
(
2
・本产品目录所登载的各种数据以及尺寸，并非作为保证产品特性的依据。
有关详情，请向本公司咨询。
22
2013-2014
C
M
Y
K
ESR·
CPX3225A
CPX3225A
1/3
ESR(
&
)
25
1/10
10nA
(
(
mA
mA)
CMOS IC
μW)
IC
(E2PROM)
(
1.
2.
3.
ESR(
ESR
1
)
mA
1/3
mA(
25
100mW)
3
μW
RFID
1/10
IC
10nA
RF
(
m)
CPU
DRAM
SMD
)
!
CPX3225A252D
2.6V
2.5mF
25
3.2×2.5×0.9mm
0.024g
CPX3225A752D
2.6V
7.5mF
25
3.2×2.5×0.9mm
0.024g
DIANET
SPRON
(SmCo)
Cellular phone
Car electronics
Game
Digital still camera
Notebook PC
TV
“ISO
“ISO 14001”
9001”
2013 2014
www.sii-me.com
Micro-Energy Division
1-8, Nakase, Mihamaku, Chiba-shi, Chiba 261-8507, Japan
Telephone:+81-43-211-1735 Facsimile:+81-43-211-8034
Asia
Asia
2
:+852-2494-5111
:+852-2480-5479
Email:[email protected]
http://www.sih.com.hk
138
200021
:(021)-6375-6611
:(021)-6375-6727
200
27 2701-2703
104
:+886-2-2563-5001
:+886-2-2563-5580
Email:[email protected]
http://www.sii.com.tw
#507, 508, Korea City Air Terminal Bldg,
159-6, Samsung-dong, Gangnam-gu,
Seoul, 135-728 Korea
Telephone:+82-2-565-8006
Facsimile:+82-2-565-8306
http://www.sii.co.kr
North/Central/South America
Europe
Siemensstrasse 9
D-63263 Neu Isenburg, Germany
Telephone: +49-6102-297-0
Facsimile: +49-6102-297-50100
Email:[email protected]
http://www.seiko-instruments.de
2013
101 12F
21221 S. Western Ave., Suite 250,
Torrance, CA 90501, U.S.A.
Telephone: +1-310-517-7802
Facsimile: +1-310-517-7792
Email:[email protected]
http://www.sii-me.com
11
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