15SQ045 N1007 REV.B - Sangdest Microelectronics (Nanjing) Co

SANGDEST
MICROELECTRONICS
15SQ045
Technical Data
Data Sheet N1007, Rev. B
Green Products
15SQ045 SCHOTTKY BARRIER RECTIFIER
Applications:
z
z
z
z
DC-DC converters
AC adapter
High frequency rectification circuit
Bypass diodes
Features:
z
z
z
z
z
Super-high speed & low noise switching
Low voltage drop
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In Inches/ mm
R-6
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
15SQ045
Technical Data
Data Sheet N1007, Rev. B
Green Products
Marking Diagram:
Where XXXXX is YYWWL
15SQ045
SSG
YY
WW
L
= Part Name
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
15SQ045
Package
R-6
(Pb-Free)
Shipping
500pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
15SQ045
Technical Data
Data Sheet N1007, Rev. B
Green Products
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Max. Peak One Cycle NonRepetitive Surge Current
Symbol
VRRM
IF(AV)
Condition
R-load, @Ta= 50°C
IFSM
8.3 ms, half Sine pulse
Max.
45
Units
V
15
A
300
A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Symbol
VFM
IRM1
IRM2
Thermal Resistance(Typical)
Condition
Max.
0.55
Units
V
Ta=25℃
0.5
mA
Ta=100℃
25
IFM=15.0A,Ta=25℃
VRM=VRRM
R θJ-c
Between junction and case
3.0
R θJ-L
Between junction and lead
2.0
℃/W
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
at reduced reverse voltage
at reduced reverse voltage
in DC forward mode
Symbol
Condition
Specification
Units
TJ
VR≤80%VRRM
VR≤50%VRRM
-55 to +150
-55 to +180
-55 to +200
°C
Max. Storage Temperature
Tstg
-
-55 to +150
°C
Approximate Weight
wt
-
2.24
g
Case Style
R-6
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
15SQ045
Technical Data
Data Sheet N1007, Rev. B
Green Products
100
TJ=125℃
10
Reverse Current (MA)
Junction Capacitance-CT(PF)
10000
TJ=25℃
1000
100
0
5
10
15
20
25
30
35
1
0.1
TJ=25℃
0.01
0.001
40
10
15
20
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance Vs.Reverse Voltage
Instantaneous Forward Current(A)
25
30
35
40
Fig.2-Typical Values Of Reverse Current VS.Reverse Voltage
100
10
TJ=25℃
1
0.3
0.4
45
Reverse Voltage (%)
0.5
0.6
0.7
Forward Voltage Drop(V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1007, Rev. B
15SQ045
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •