SBRF10150CT N0918 REV.A - Sangdest Microelectronics (Nanjing

SANGDEST
MICROELECTRONICS
SBRF10150CT
Green Products
Technical Data
Data Sheet N0918, Rev. A
SBRF10150CT SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
150°°C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
OUTLINE DRAWING
Mechanical Dimensions: In mm
Dim
A
OPTION 1(CJ)
Min
Max
4.4
4.6
OPTION 2(HD)
Min
Max
4.30
4.70
b
0.6TYP
0.50
0.75
b1
1.3TYP
1.30
1.40
b2
1.7TYP
1.70
1.80
b3
1.6TYP
1.50
1.75
b4
1.2TYP
1.10
1.35
C
0.60TYP
0.50
0.75
D
14.8
15.1
14.80
15.20
E
10.06
10.26
9.96
10.36
e
2.55TYP
2.54TYP
F
2.9
3.1
2.80
3.20
G
6.5
6.9
6.50
6.90
L
12.7
13.7
12.8
13.2
L1
3.4
3.8
3.60
4.00
L2
2.6
3.0
-
-
2.50
Q
2.5
2.9
Q1
2.5
2.9
ØR
3.5REF
2.90
2.70REF
3.50REF
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF10150CT
Green Products
Technical Data
Data Sheet N0918, Rev. A
OPTION 3
OPTION 4
Dim
Min
Max
Min
Max
A
4.53
4.93
4.50
4.90
b
0.71
0.91
0.70
0.90
b1
1.15
1.39
1.33
1.47
C
0.36
0.53
0.45
0.60
D
15.67
16.07
15.67
16.07
E
9.96
10.36
9.96
10.36
e
2.54TYP
2.54 BSC
F
2.34
2.76
2.34
2.74
G
6.50
6.90
6.48
6.88
L
12.37
12.77
12.78
13.18
L1
2.23
2.63
3.03
3.43
Q
2.56
2.96
2.56
2.96
Q1
3.10
3.50
3.10
3.50
ØR
2.98
3.38
3.08
3.28
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF10150CT
Green Products
Technical Data
Data Sheet N0918, Rev. A
OPTION 5 (SR)
ITO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF10150CT
Green Products
Technical Data
Data Sheet N0918, Rev. A
Marking Diagram:
Where XXXXX is YYWWL
SBR
F
10
150
CT
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (10A)
= Reverse Voltage (150V)
= Configuration
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
Package
ITO-220AB
(Pb-Free)
SBRF10150CT
Shipping
50pcs / tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Symbol
VRWM
Max. Average Forward
IF(AV)
Condition
50% duty cycle @TC = 145°C,
rectangular wave form
Max. Peak One Cycle NonRepetitive Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
Max.
150
Units
V
10
A
120
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF10150CT
Green Products
Technical Data
Data Sheet N0918, Rev. A
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
(per leg) *
Max. Reverse Current (per
leg) *
Max. Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Max. Voltage Rate of
Change
*
Symbol
VF1
IR1
CT
LS
dv/dt
Condition
@ 5 A, Pulse, TC = 25 °C
@VR = rated VR
TC = 25 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
Units
0.93
V
1.0
mA
200
pF
8.0
nH
10,000
V/µs
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Max. Junction Temperature
Max. Storage Temperature
Maximum
Thermal
Resistance Junction to Case
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +150
-55 to +150
Units
°C
°C
RθJC
DC operation
4.5
°C/W
wt
-
2
g
ITO-220AB
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBRF10150CT
Green Products
1000
0.1
100
Reverse Current-IR(MA)
Junction Capacitance-CT(PF)
Technical Data
Data Sheet N0918, Rev. A
TJ=25℃
TJ=25
10
0.01
TJ=125℃
0.001
TJ=25℃
0.0001
5
10
15
20
25
30
35
40
0
30
Reverse Voltage-VR(V)
90
120
Reverse Voltage-VR(V)
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current-IF(A)
60
100
TJ=125℃
10
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
Forward Voltage Drop-VF(V)
Fig.1-Typical
Forward Voltage
Drop
Characteristics
Fig.3-Typical
Instantaneous
Forward
Voltage
Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
150
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0918, Rev. A
SBRF10150CT
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve
product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
sales department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC - Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •