63CPQ80(100) N0208 REV. - Sangdest Microelectronics (Nanjing

63CPQ080
63CPQ100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0208, Rev. A
Green Products
63CPQ080/63CPQ100 SCHOTTKY RECTIFIER
Applications:
•
•
•
•
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Features:
•
•
•
•
•
•
•
•
•
•
150 °C TJ operation
Center tap TO-247AD package
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Green Products in Compliance with the RoHS Directive
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm
SYMBOL
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
L
L1
P
P1
P2
Q
S
T
U
MIN.
4.80
2.21
1.90
1.10
0.55
20.80
15.60
19.42
3.50
6.05
TYP.
5.00
2.41
2.00
1.20
2.00
3.00
0.60
21.00
16.55
1.20
15.80
13.30
5.00
2.50
5.44
19.92
4.13
3.60
2.50
5.80
6.15
10.00
6.20
MAX.
5.20
2.61
2.10
1.35
0.75
21.20
16.00
20.42
3.70
7.40
6.25
TO-247AD
TO-247AD(HD)
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
63CPQ080
63CPQ100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0208, Rev. A
Green Products
Marking Diagram:
Where XXXXX is YYWWL
63
C
PQ
80/100
SSG
YY
WW
L
63CPQ080
= Forward Current (60A)
= Configuration
= Device Type
= Reverse Voltage (80/100V)
= SSG
= Year
= Week
= Lot Number
63CPQ100
Cautions:Molding resin
Epoxy resin UL:94V-0
Ordering Information:
Device
63CPQ080/100
Package
Shipping
TO-247AD (Pb-Free)
30pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification.
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Average Forward Current
Peak One Cycle NonRepetitive Surge Current
(per leg)
Non-Repetitive Avalanche
Energy(per leg)
Repetitive Avalanche
Current(per leg)
Symbol
VRWM
Condition
-
IF(AV)
50% duty cycle @TC = 105°C,
rectangular wave form
IFSM
8.3 ms, half Sine pulse
EAS
IAR
TJ=25℃,IAS=1A,
L=30 mH
Current decaying linearly to
zero in 1 μ sec Frequency
limited by TJ max. VA=1.5×VR
typical
Max.
80(63CPQ080)
100(63CPQ100)
60
Units
V
492
A
15
mJ
1
A
A
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
63CPQ080
63CPQ100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0208, Rev. A
Green Products
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Reverse Current (per leg) *
Symbol
VF1
VF2
IR1
IR2
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Voltage Rated of Change
*
CJ
LS
dv/dt
Condition
@ 30A, Pulse, TJ = 25 °C
@ 30A, Pulse, TJ = 125 °C
@VR = rated VR
TJ = 25 °C
@VR = rated VR
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm from
package body
-
Max.
0.80
0.75
0.3
Units
V
V
mA
25.0
mA
1300
pF
7.5
nH
10,000
V/μs
Specification
-55 to +150
-55 to +150
0.8(per leg)
Units
°C
°C
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Maximum Thermal
Resistance Junction to Case
(per leg)
Maximum Thermal
Resistance, Case to Heat
Sink
Approximate Weight
Case Style
Symbol
TJ
Tstg
RθJC
Condition
DC operation
0.4(per device)
RθCS
wt
Mounting surface, smooth and
greased
-
°C/W
0.25
°C/W
6.7
g
TO-247AD
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
63CPQ080
63CPQ100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0208, Rev. A
Green Products
TJ=25℃
100
0
5
10
15
20
25
30
35
40
Instantaneous Reverse Current-IR(MA)
1000
10
1
TJ=125℃
0.1
0.01
0.001
TJ=25℃
0.0001
10
Reverse Voltage (V)
20
30
40
50
60
70
80
90
Percent of Rated Peak Reverse Voltage (%)
Fig.2-Typical Reverse Characteristics
Fig.1-Typical Junction Capacitance
Instantaneous Forward Current (A)
Junction Capacitance (PF)
10000
100
TJ=125℃
10
TJ=25℃
1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage Drop (V)
Fig.3-Typical Instantaneous Forward Voltage Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •
100
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N0208, Rev. A
63CPQ080
63CPQ100
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - [email protected] sangdest.com.cn •