SBS5100 N1559 REV. - Sangdest Microelectronics (Nanjing) Co. Ltd.

SANGDEST
MICROELECTRONICS
SBS5100
Technical Data
Data Sheet N1559, Rev. -
Applications:
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Green Products
SBS5100 SCHOTTKY RECTIFIER
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Disk drives
Battery charging
Features:
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Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters, Free Wheeling,
and Polarity Protection Applications
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/Inches
Dim
A
B
C
D
All
DO-201AE
Min Max Min
Max
25.4
1.000
7.20 9.50 0.283 0.374
0.94 1.07 0.037 0.042
4.80 5.30 0.189 0.209
In mm
In inch
DO-201AE
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBS5100
Technical Data
Data Sheet N1559, Rev. -
Green Products
Marking Diagram:
Where XXXXX is YYWWL
SBS
5
100
SSG
YY
WW
L
= Device Type
= Forward Current (5A)
= Reverse Voltage (100V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding resin
Epoxy resin UL:94V-0
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SBS5100
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Maximum RMS Voltage
VRMS
70
V
IF(AV)
5.0
A
IFSM
120
A
VFM
0.85
0.70
V
IRM
0.5
10
mA
Cj
250
pF
RθJA
25
K/W
TJ ,TSTG
-55 to +150
°C
Average Rectified Output Current
(Note 1)
@TA = 105°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 5.0A,TA = 25°C
@IF = 5.0A,TA = 125°C
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Maximum Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Storage Temperature Range
Case Style
DO-201AE
Note:1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
SBS5100
Green Products
1000
100
Reverse Current-IR(MA)
1
TJ=25℃
TJ=125℃
0.1
0.01
TJ=25℃
0.001
0.0001
10
0
5
10
15
20
25
30
35
40
10
20
Reverse Voltage-VR(V)
30
40
50
60
70
80
90
100
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance Vs.Reverse
Fig.2-Typical Values Of Reverse Current Vs.Reverse
Voltage
Voltage
Instantaneous Forward Current-IF(A)
Junction Capacitance-CT(PF)
Technical Data
Data Sheet N1559, Rev. -
100
TJ=125℃
10
TJ=25℃
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Forward Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •
SANGDEST
MICROELECTRONICS
Technical Data
Data Sheet N1559, Rev. -
SBS5100
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113
(86) 25-87123907 •
• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •