MASW6030G
GaAs DPDT Switch
DC - 6.0 GHz
Rev. V3
Features
Pad Layout
Low Insertion Loss, 0.5 dB Typical
Fast Switching Speed, 4 ns Typical
Ultra Low DC Power Consumption
RoHS* Compliant
Description
MA/COM’s MASW6030G is a GaAs MMIC DPDT
switch die. The MASW6030G is ideally used where
low power consumption is required.
Typical applications include transmit / receive
switching, switch matrices and switched filter banks,
WLAN IEEE 802.11a and 802.11 b/g systems.
Other applications include cordless phones and
base stations.
Ordering Information
Die Size - Inches (mm)
Part Number
Package
MASW6030G
DIE 1
0.048 x 0.038 x 0.010 (1.220 x 0.970 x 0.250)
Bond Pad Dimensions
1. Die quantity varies.
Absolute Maximum Rating 2,3
Bond Pad
Dimensions - Inches (mm)
RF1, RF6
0.005 x 0.005 (0.130 x 0.150)
Parameter
Absolute Maximum
RF2, RF3, RF4, RF5, A, B
0.004 x 0.004 (0.100 x 0.100)
Control Value (A or B)
0/-8 V
GND
0.005 x 0.013 (0.130 x 0.320)
Max Input RF Power
+34 dBm
(0.5 - 6.0 GHz with 0/-8 V CTL)
Storage Temperature
-65°C to +175°C
Max Operating Temperature
+175°C
Schematic
RF3
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
Q2
D
Q3
RF1 to
RF6 to
RF1
A
B
RF2
RF3
RF4
RF5
1
0
On
Off
On
Off
0
1
Off
On
Off
On
4. 0 = 0 to –0.2 V, 1 = -5 V.
5. When an RF output port is ―Off‖ it is shorted to ground
through an ―On‖ shunt MESFET.
2K
2K
RF2
Q1
Q4
S
2K
2K
D
D
2K
2K
S
Q2
Q3
S
2K
Truth Table 4,5
RF5
GND A B GND
Q7
2K
S
GND A
S
B GND
D
Q4
RF4
*Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW6030G
GaAs DPDT Switch
DC - 6.0 GHz
Rev. V3
Electrical Specifications: +25°C, 0/5 Vdc, 50
Parameter
Test Conditions
Units
Min.
Typ.
Max.
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
dB
dB
dB
dB
—
—
—
—
—
—
—
—
0.6
0.8
1.0
1.5
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
dB
dB
dB
dB
40
35
25
20
—
—
—
—
—
—
—
—
VSWR
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
Ratio
Ratio
Ratio
Ratio
—
—
—
—
—
—
—
—
1.2:1
1.4:1
1.5:1
1.8:1
Input P-1dB
0.5 - 6.0 GHz, 0 / -5V, 0 / -8V
0.05 GHz, 0 / -5V, 0 / -8V
dBm
dBm
—
—
+27 / +33
+21 / +26
—
—
IP2
Two Tone Input Power up to +5 dBm
0.5 - 6.0 GHz
0.05 GHz
dBm
dBm
—
—
+68
+62
—
—
IP3
Two Tone Input Power up to +5 dBm
0.5 - 6.0 GHz
0.05 GHz
dBm
dBm
—
—
+45
+40
—
—
Control Current
VIN Low (0 to –0.2 V)
VOUT High (-5 V @ 10 µA Typ to –8 V)
µA
µA
—
—
—
—
5
100
T-rise, T-fall
10% to 90% RF and 90% to 10% RF
nS
—
2
—
TON, TOFF
50% control to 90% RF, and 50% control to 10% RF
nS
—
4
—
Transients
In Band
mV
—
15
—
Insertion Loss
6
6. Loss changes 0.0025 dB/°C (-55°C to +85°C.)
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW6030G
GaAs DPDT Switch
DC - 6.0 GHz
Rev. V3
Typical Performance
Handling Precautions
Insertion Loss
2.0
Insertion Loss +30°C
Insertion Loss -55°C
Insertion Loss +85°C
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
Frequency (GHz)
VSWR @ 25°C
2.0
1.8
Permanent damage to the MASW6030G may
occur if the following precautions are not adhered
to:
A. Cleaniness - MASW6030G should be handled
in a clean environment. DO NOT attempt to
clean unit after the MASW6030G is installed.
B. Static Sensitivity—All chip handling equipment
and personnel should be DC grounded.
C. Transient - Avoid instrument and power supply
transients while bias is applied to the
MASW6030G. Use shielded signal and bias
cables to minimize inductive pick-up.
D. Bias - Apply voltage to either of the
complementary control ports only when the
other is grounded. No port should be allowed to
―float‖.
E. General Handling - It is recommended that the
MASW6030G chip be handled along the long
side of the die with a sharp pair of bent
tweezers. DO NOT touch the surface of the
chip with fingers or tweezers.
1.6
Wire Bonding
1.4
A. Ball or wedge with 1.0 mil diameter pure gold
wire. Thermosonic wirebonding with a nominal
stage temperature of 150°C and a ball bonding
force of 40 to 50 grams or wedge bonding force
o1 18 to 22 grams is recommended. Ultrasonic
energy and time should be adjusted to the
minimum levels achieve reliable wirebonds.
B. Wirebonds should be started on the chip and
terminated on the package.
1.2
1.0
0
1
2
3
4
5
6
7
Frequency (GHz)
Isolation @ 25°C
80
70
60
50
40
30
20
0
1
2
3
4
5
6
7
Frequency (GHz)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW6030G
GaAs DPDT Switch
DC - 6.0 GHz
Rev. V3
Mounting
The MASW6030G is back-metallized with Pd/Ni/Au
(100/1,000, 10,000 Å) metallization. It can be diemounted with AuSn eutectic preforms or with
thermally conductive epoxy. The package surface
should be clean and flat before attachment.
Eutectic Die Attach:
A. A 80/20 gold/tin preform is recommended with
a work surface temperature of approximately
255°C and a tool temperature of 265°C. When
not 90/10 nitrogen/hydrogen gas is applied,
tool tip temperature should be approximately
290°C.
B. DO NOT expose the MASW6030G to a
temperature greater than 320°C for more than
20 seconds. No more than 3 seconds for
scrubbing should be required for attachment.
Epoxy Die Attach:
A. Apply a minimum amount of epoxy and place
the MASW6030G into position. A thin epoxy
fillet should be visible around the perimeter of
the chip.
B. Cure epoxy per manufacturer’s recommended
schedule.
C. Electrically conductive epoxy may be used by
is not required.
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MASW6030G
GaAs DPDT Switch
DC - 6.0 GHz
Rev. V3
M/A-COM Technology Solutions Inc. All rights reserved.
Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")
products. These materials are provided by MACOM as a service to its customers and may be used for
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the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future
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5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support