QL65J7SA TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Applications • • Visible Light Output: typ. 660nm Optical Power Output: 50 mW CW Package Type: TO-18 (5.6 mm) Built-in Photo Diode for Monitoring Laser Diode DVD R/RW Optical Module PIN CONNECTION 1. Laserdiode cathode 2. Laserdiode anode and photodiode cathode 3. Photodiode anode Absolute Maximum Rating (TC=25°C) Type Absolute Maximum Ratings Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbol Value Unit P V V TOP TSTG 60 2 30 -10 … +75 -40 … +85 mW V V °C °C Electgrical and Optical Characteristics (TC=25°C) Type Optical Specification Output Power Lasing Wavelength Beam Divergence Beam Angle Electrical Specification Slope Efficiency Threshold Current Operation Current Operation Voltage 23.02.2010 Symbol Min. Typ. Max. Unit PO λP θІІ θ┴ ΔθІІ Δθ┴ 653 6 15 - 50 660 9 20 - 667 12 25 ±3 ±3 mW nm deg deg deg deg ES Ith IOP VOP 30 - QL65J7SA 1.0 45 90 2.6 60 120 3.0 Condition PO =50mW PO =50mW PO =50mW PO =50mW PO =50mW PO =50mW mW/mA PO =30~50mW mA PO =50mW mA PO =50mW V PO =50mW 1 of 2 Package Dimensons TO-18 Package (Unit:mm) 23.02.2010 QL65J7SA 2 of 2