ROITHNER RLT8810MG

ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: [email protected]
http://www.roithner-laser.com
RLT8810MG
TECHNICAL DATA
High Power Infrared Laserdiode
Structure: index guided single transverse mode
Lasing wavelength: 875 nm typ.
Output power: 10 mW cw
Package: 5.6 mm, TO-18
NOTE!
LASERDIODE
MUST BE COOLED!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
Po
LD Reverse Voltage
VR(LD)
PD Reverse Voltage
VR(PD)
Operation Case Temperature
TC
Storage Temperature
TSTG
RATING
10
2
30
-10 .. +60
-40 .. +85
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
Ith
cw
Operation Current
Iop
Po = 10 mW
Operating Voltage
Vop
Po = 10 mW
Lasing Wavelength
Po = 10 mW
λp
Beam Divergence
Po = 10 mW
θ//
Beam Divergence
Po = 10 mW
θ⊥
Slope Efficiency
cw
η
Monitor Current
Im
Po = 10 mW
MIN
7
20
9
30
0.5
UNIT
mW
V
V
°C
°C
TYP
10
25
1.65
875
10
33
0.7
400
MAX
15
30
1.8
883
12
38
1
500
UNIT
mA
mA
V
nm
°
°
mW/mA
µA