EMH15 / IMH15A : Transistors

EMH15 / IMH15A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Outline
Parameter
VCEO
IC(MAX.)
R1
Tr1 and Tr2
EMT6
SMT6
(4)
(6)
50V
100mA
47k
(5)
(5)
(6)
(4)
(1)
(3)
(2)
(2)
(3)
(1)
EMH15
(SC-107C)
IMH15A
SOT-457 (SC-74)
Inner circuit
Features
1) Built-In Biasing Resistors.
2) Two DTC144T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
EMH15
IMH15A
Collector
(6)
Base
(5)
Emitter
(4)
Collector
(4)
Base
(5)
Emitter
(6)
(1)
Emitter
(2)
Base
(3)
Collector
(3)
Emitter
(2)
Base
(1)
Collector
Application
Inverter circuit, Interface circuit, Driver circuit
Packaging specifications
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Package
Package
size
(mm)
Taping
code
EMH15
EMT6
1616
T2R
180
8
8,000
H15
IMH15A
SMT6
2928
T110
180
8
3,000
H15
Part No.
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© 2014 ROHM Co., Ltd. All rights reserved.
1/5
Marking
2014.10 - Rev.D
Data Sheet
EMH15 / IMH15A
Absolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC(MAX.)*1
100
mA
Collector current
Collector Power dissipation
EMH15
PD
IMH15A
Junction temperature
Range of storage temperature
*2
150 (Total)
*3
mW
300 (Total)
*4
mW
Tj
150
°C
Tstg
55 to 150
°C
Electrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
Typ.
Max.
Unit
IC= 50A
50
-
-
V
BVCEO
IC= 1mA
50
-
-
V
BVEBO
IE= 50A
5
-
-
V
Collector cut-off current
ICBO
VCB = 50V
-
-
0.5
A
Emitter cut-off current
IEBO
VEB = 4V
-
-
0.5
A
IC / IB= 5mA / 0.5mA
-
-
0.3
V
100
250
600
-
-
32.9
47
61.1
k
VCE = 10V, IE = 5mA,
f = 100MHz
-
250
-
MHz
Collector-emitter saturation voltage
VCE(sat)
DC current gain
hFE
Input resistance
R1
Transition frequency
fT
*1
Conditions
VCE= 5V , IC= 1mA
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
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2/5
2014.10 - Rev.D
Data Sheet
EMH15 / IMH15A
Electrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
I =
Fig.1 Grounded emitter propagation
characteristics
B
50
10
200μA
180μA
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
VCE=5V
1
0.1
Ta=100ºC
25ºC
40ºC
0.01
0.001
0
0.5
1
1.5
160μA
40
140μA
120μA
30
100μA
80μA
20
60μA
40μA
10
20μA
Ta=25ºC
0
2
0
5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
1k
1
VCE=5V
Ta=100°C
25°C
−40°C
50
20
10
5
2
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
200m
100m
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m
100μ 200μ
50m100m
500μ 1m
2m
5m 10m 20m
50m100m
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
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© 2014 ROHM Co., Ltd. All rights reserved.
lC/lB=10
500m
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
DC CURRENT GAIN : hFE
200
100
10
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.3 DC Current gain
vs. Collector Current
500
0A
3/5
2014.10 - Rev.D
Data Sheet
EMH15 / IMH15A
Dimensions (Unit : mm)
D
EMT6
A
x
c
S A
Lp
Lp
HE
L
E
L
b
A1
y S
l1
A
e1
e
S
e
b2
Patterm of terminal position areas DIM
A1
A
b
c
D
E
e
HE
L
Lp
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
0.00
0.10
0.45
0.55
0.17
0.27
0.08
0.18
1.50
1.70
1.10
1.30
0.50
1.50
1.70
0.10
0.30
0.35
0.10
0.10
MILIMETERS
MIN
MAX
1.25
0.37
0.45
INCHES
MIN
0
0.018
0.007
0.003
0.059
0.043
MAX
0.004
0.022
0.011
0.007
0.067
0.051
0.02
0.059
0.004
-
0.067
0.012
0.014
0.004
0.004
INCHES
MIN
MAX
0.049
-
0.015
0.018
Dimension in mm/inches
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© 2014 ROHM Co., Ltd. All rights reserved.
4/5
2014.10 - Rev.D
Data Sheet
EMH15 / IMH15A
Dimensions (Unit : mm)
SMT6
D
A
e
c
L1
Lp
HE
E
Q
b
A3
x
S A
y S
A1
l1
A
e1
e
S
b2
Patterm of terminal position areas DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.25
0.40
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.20
0.10
MILIMETERS
MIN
MAX
2.10
0.60
0.90
INCHES
MIN
0.039
0
MAX
0.051
0.004
0.01
0.01
0.004
0.11
0.059
0.016
0.01
0.118
0.071
0.04
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
INCHES
MIN
MAX
0.08
-
0.024
0.035
Dimension in mm/inches
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© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.10 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
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below), please contact and consult with a ROHM representative : transportation equipment (i.e.
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equipment, nuclear power control systems, and submarine repeaters.
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the recommended usage conditions and specifications contained herein.
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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
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such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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R1102A