RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions (Unit : mm) TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3 - 2.7±0.3 29±1 29±1 φ1.8±0.2 ROHM : MSD JEDEC : DO-34 zConstruction Silicon epitaxial planar zTaping specifications Standard dimension value(mm) Symbol BROWN A H2 BLUE T-72 Ａ E T-77 52.4±1.5 +0.4 0 26.0 T-72 5.0±0.5 T-77 5.0±0.3 T-72 C 1.0 max. T-77 T-72 D 0 T-77 T-72 1/2A±1.2 E T-77 1/2A±0.4 T-72 0.7 max. Ｆ T-77 0.2 max. T-72 H1 6.0±0.5 T-77 T-72 H2 5.0±0.5 T-77 T-72 1.5 max. |L1-L2| T-77 0.4 max. ＊H1(6mm)：BROWN B B C L1 L2 F D H1 zAbsolute maximum ratings (Ta = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature zElectrical characteristics (Ta = 25°C) Parameter Symbol Forward current Reverse current Capacitance between terminals Limits 40 40 100 1 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A ℃ ℃ VF1 VF2 Min. - Typ. - Max. 0.34 0.55 Unit V V IR - - 100 µA Ct - 6.0 - pF Conditions IF=10mA IF=100mA VR=40V VR=10V , f=1MHz Rev.C 1/3 RB441Q-40 Diodes zElectrical characteristic curves 100 10000 100 Ta=125℃ Ta=-25℃ Ta=25℃ 1 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 0 AVE:438.1mV Ta=25℃ IF=10mA n=30pcs 310 300 290 280 410 AVE:287.7mV 90 70 60 50 40 20 10 0 IR DISPERSION MAP VF DISPERSION MAP VF DISPERSION MAP 20 7 PEAK SURGE FORWARD CURRENT:IFSM(A) 8 6 5 AVE:6.09pF 4 3 2 1 0 10 AVE:10.3A 5 1cyc Ifsm 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ta=25℃ f=1MHz VR=10V n=10pcs 9 AVE:4.837uA 30 270 10 30 Ta=25℃ VR=40V n=30pcs 80 REVERSE CURRENT:IR(uA) 420 FORWARD VOLTAGE:VF(mV) 430 20 100 320 440 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=25℃ IF=100mA n=30pcs 450 10 1 0 500 460 FORWARD VOLTAGE:VF(mV) Ta=75℃ 100 0.1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 10 f=1MHz 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ 0 Ifsm 15 8.3ms 8.3ms 1cyc 10 5 0 1 Ct DISPERSION MAP IFSM DISRESION MAP 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 Ifsm 15 t 10 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IM=10mA IF=100mA 0.1 Rth(j-a) 1ms time D=1/2 0.08 300us Rth(j-l) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 DC Sin(θ＝180) 0.06 0.04 0.02 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.C 0.2 2/3 RB441Q-40 Diodes 0.1 Sin(θ＝180) 0.06 D=1/2 0.04 DC 0.02 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 Io 0A 0V 0.25 0.2 t DC VR D=t/T VR=20V T Tj=125℃ 0.15 D=1/2 0.1 Sin(θ＝180) 0.05 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 REVERSE POWER DISSIPATION:PR (W) 0.3 0.3 0A 0V 0.25 0.2 Io t T DC 0.15 VR D=t/T VR=20V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0.05 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.C 125 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1