SSF6646 - Silikron

SSF6646
DESCRIPTION
The SSF6646 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .
Schematic diagram
GENERAL FEATURES
● VDS = 60V,ID =4.5A
RDS(ON) <75mΩ @ VGS=4.5V
RDS(ON) <60mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
SSF6646
SSF6646
SOP-8
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID(25℃)
5
A
ID(70℃)
4.3
A
IDM
25
A
PD
2.4
W
TJ,TSTG
-55 To 175
℃
RθJA
62.5
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
©Silikron Semiconductor CO.,LTD.
VGS=0V ID=250μA
BVDSS
1
60
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SSF6646
Zero Gate Voltage Drain Current
IDSS
VDS=48V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3
V
Drain-Source On-State Resistance
RDS(ON)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1
VGS=4.5V, ID=3A
50
75
mΩ
VGS=10V, ID=4.5A
44
60
mΩ
VDS=5V,ID=4.5A
5
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=25V,VGS=0V,
F=1.0MHz
700
PF
100
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
50
PF
Turn-on Delay Time
td(on)
13
nS
Turn-on Rise Time
tr
10
nS
30
nS
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
VDS=30V,VGS=10V,RGEN=3Ω
ID=4.5A
Turn-Off Fall Time
tf
6
nS
Total Gate Charge
Qg
15
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
Qgd
4
nC
VDS=48V,ID=4.5A,VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.7A
0.8
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
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SSF6646
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
V dd
V gs
R gen
D
VOUT
V out
toff
tf
td(off)
90%
Rl
V in
ton
tr
td(on)
90%
INVERTED
10%
10%
G
90%
VIN
S
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
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SSF6646
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
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SSF6646
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
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cannot be evaluated in an independent device, the customer should always evaluate and test devices
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This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.
©Silikron Semiconductor CO.,LTD.
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