HIGH VOLTAGE N-Channel MOSFET GD S D WFF1 N60 ! ● 600V N-Channel MOSFET ◀ ▲ G! ● ● Features ! S □ Low Intrinsic Capacitances □ Excellent Switching Characteristics TO‐220F □ Extended Safe Operating Area G‐Gate,D‐Drain,S‐Sourse □ Unrivalled Gate Charge :Qg= 5nC (Typ.) □ BVDSS=600V,ID=1A □ RDS(on) : 11.5 Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID Tc=25℃ unless other wise noted WFF1 N60 Unit 600 V -continuous (Tc=25℃) 1* A -continuous (Tc=100℃) 0.6* A ±30 V Parameter Drain-Sourse Voltage Drain Current VGS Gate-Sourse Voltage EAS Single Plused Avanche Energy (Note1) 50 mJ IAR Avalanche Current (Note2) 1 A PD Power Dissipation (Tc=25℃) 21 W -55 ~ +150 ℃ 300 ℃ TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max Units RθJC Thermal Resistance,Junction to Case -- 5.95 ℃/W RθJA Thermal Resistance,Junction to Ambient -- 62.5 ℃/W * Drain current limited by maximum junction temperature. www.wisdom-technologies.com Rev.A0,August , 2010 | 1 HIGH VOLTAGE N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units Off Characteristics BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 600 -- -- V △BVDSS/ △TJ Breakdown Voltage Temperature Conficient ID=250μA,Reference to 25℃ -- 0.4 -- V/℃ IDSS Zero Gate Voltage Drain Current Vds=600V, Vgs=0V -- -- 1 μA 10 μA IGSSF Gate-body leakage Current, Forward IGSSR Gate-body leakage Current, Reverse Vds=480V, Tc=125℃ Vgs=+30V, Vds=0V -- -- 100 nA Vgs=-30V, Vds=0V -- -- -100 nA 2 -- 4 V -- -- 11.5 Ω -- 120 150 pF -- 20 25 pF -- 3 4 pF -- 5 20 nS -- 25 60 nS 7 25 nS -- 25 60 nS -- 5 6 nC 1 -- nC 2.6 -- nC -- 1 A 3.6 A On Characteristics VGS(th) Date Threshold Voltage Id=250uA,Vds=Vgs RDS(on) Static Drain-Sourse On-Resistance Id=0.5A,Vgs=10V Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V，VGS=0， f=1.0MHz Switching Characteristics Td(on) Turn-On Delay Time Tr Turn-On Rise Time Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Sourse Charge Qgd Gate-Drain Charge VDD=300V，ID=1A RG=25Ω (Note 3,4) -- VDS=480,VGS=10V， ID=1A (Note 3,4) -- Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current ISM Maximun Plused Drain-Sourse DiodeForwad Current VSD Drain-Sourse Diode Forward Voltage trr Qrr *Notes Reverse Recovery Time Reverse Recovery Charge --- -- Id=2A -- -- 1.4 V IS=2A,VGS =0V diF/dt=100A/μs (Note3) -- 160 -- nS 0.3 -- μC -- 1, L=55mH, IAS=1.0A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature www.wisdom-technologies.com Rev.A0,August , 2010 | 2 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 0 10 150 25 -55 Notes : 1. VDS = 50V 2. 250s Pulse Test Notes : 1. 250s Pulse Test 2. TC = 25 -2 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 VGS = 10V IDR , Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 25 VGS = 20V 20 0 10 15 10 5 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 0 0.0 -1 0.5 1.0 1.5 2.0 2.5 10 0.2 0.4 0.6 ID, Drain Current [A] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 200 1.2 1.4 1.6 12 VDS = 120V 10 150 Coss 100 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss VGS , Gate-Source Voltage [V] Ciss Capacitance [pF] 1.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 50 0.8 VSD , Source-Drain Voltage [V] VDS = 300V VDS = 480V 8 6 4 2 Note : ID = 1.2 A 0 -1 10 0 0 10 1 10 0 1 2 Figure 5. Capacitance Characteristics 4 5 Figure 6. Gate Charge Characteristics www.wisdom-technologies.com 3 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Rev.A0,August , 2010 | 3 HIGH VOLTAGE N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.2 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.6 A 0.5 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.00 1 10 Operation in This Area is Limited by R DS(on) 100 µs 0.75 ID, Drain Current [A] ID, Drain Current [A] 1 ms 10 ms 0 10 100 ms DC -1 10 Notes : 0.50 0.25 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.00 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature 1 D = 0 .5 10 0 .2 0 N o te s : 1 . Z J C ( t) = 5 .9 5 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 0 .0 2 10 -1 PDM 0 .0 1 JC ( t) , T h e r m a l R e s p o n s e 10 75 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Z t1 t2 s i n g l e p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.wisdom-technologies.com Rev.A0,August , 2010 | 4 HIGH VOLTAGE N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V ID (t) VDS (t) VDD tp tp www.wisdom-technologies.com Time Rev.A0,August , 2010 | 5 HIGH VOLTAGE N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop www.wisdom-technologies.com Rev.A0,August , 2010 | 6