UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ORDERING INFORMATION Order Number Lead Free 2SC5200-x-T3L-T Halogen Free 2SC5200-x-T3L-T www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd Package TO-3PL Pin Assignment 1 2 3 B C E Packing Tube 1 of 4 QW-R214-005, B 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 230 V Collector-Emitter Voltage VCEO 230 V Emitter-Base Voltage VEBO 5 V Collector Current IC 15 A Base Current IB 1.5 A Collector Power Dissipation (TC=25°C) PC 150 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 ~ 150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25°C) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base -Emitter Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Collector Output Capacitance SYMBOL V(BR) CEO VCE(SAT) VBE ICBO IEBO hFE1 hFE2 fT COB TEST CONDITIONS IC= 50mA, IB=0 IC= 8A, IB= 0.8A VCE= 5V, IC= 7A VCB = 230V, IE=0 VEB= 5V, IC=0 VCE= 5V, IC= 1A VCE= 5V, IC= 7A VCE= 5V, IC= 1A VCB= 10V, IE=0, f=1MHz MIN 230 55 35 TYP MAX 0.4 1.0 3.0 1.5 5.0 5.0 160 60 30 200 UNIT V V V μA μA MHz pF CLASSIFICATION OF hFE1 RANK Range R 55 ~ 110 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw O 80 ~ 160 2 of 4 QW-R214-005, B 2SC5200 Collector current, IC (A) Collector Current, IC (A) TYPICAL CHARACTERISTICS DC Current Gain vs. Collector Current 300 3 DC Current Gain, hFE Collector-Emitter Saturation Voltage, VCE(sat) (V) Collector-Emitter Saturation Voltage vs. Collector Current 100 1 0.3 TC =100℃ 0.1 -25 0.03 0.01 0.01 Collector current, IC (A) NPN EPITAXIAL SILICON TRANSISTOR 25 COMMON EMITTER IC / IB = 10 10 0.1 1 Collector Current, IC (A) 100 TC =100℃ 25 -25 30 10 3 1 0.01 COMMON EMITTER IC / IB = 10 10 0.1 1 Collector Current, IC (A) 100 Safe Operating Area 50 I MAX. (PULSED) 30 ICC MAX. 1ms (CONTINUOUS) 10ms 10 100ms DC OPERATION 5 TC =25°C 3 1 0.5 0.3 SINGLE NONREPETITIVE PULSE TC = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.1 0.05 0.03 3 VCEO MAX. 300 1000 10 30 100 Collector-Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R214-005, B 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-005, B