UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range SYMBOL RATINGS UNIT VCBO VCEO VEBO Ic IB Pc Tj Tstg 120 120 5 10 1 80 150 -55 ~150 V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified)) PARAMETER SYMBOL Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance V(BR)CEO ICBO IEBO HFE VCE(sat) VBE fT Cob TEST CONDITION Ic=50mA,IB=0 VCB=120V,IE=0 VEB=5V,Ic=0 VCE=5V,Ic=1A Ic=6A,IB=0.6A VCE=5V,Ic=5A VCE=5V,Ic=1A VCB=10V,IE=0, f=1MHz MIN TYP MAX UNIT 120 10 10 160 2.0 1.5 55 12 170 V μA μA V V MHz pF CLASSIFICATION OF hFE RANK RANGE UTC R 55-110 O 80-160 UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R214-003,A UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES Ic - VCE 400 10 300 200 8 100 6 50 4 IB=20mA 2 0 2 4 6 8 10 12 COMMON EMITTER VcE=5V 500 300 Tc=-25°C 30 10 0.01 14 0.03 0.05 0.01 0.01 °C Tc=25°C Tc=-25°C 0.03 0.03 0.1 1 0.3 10 3 COLLECTOR CURRENT, Ic (A) 1 3 10 Pc - Ta 100 1 Ta=Tc INFINITE HEAT SINK × 300×2mm AI 2 300 HEAT SINK 3 200×200×2mm AI HEAT SINK 4 100×100×2mm AI HEAT SINK 5 NO HEAT SINK 1 80 60 2 40 3 4 20 5 0 0 40 80 120 160 200 240 AMBIENT TEMPERATURE, Ta (℃ ) SAFE OPERATING AREA 30 IC MAX(PULSED) * t=1mS * 10mS * 100mS * IC MAX(CONTINUOUS) 10 * S AT 0m R 50 PE 5 O =2 C Tc D 3 ° N IO C COLLECTOR CURRENT, Ic (A) 0.3 1 *SINGLE NONREPETITIVE PULSE Tc=25°C CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE. 0.3 0.1 VCEO MAX. COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat) (V) 0.3 COLLECTOR POWER DISSIPATION, Pc (W) VCE(sat) - Ic 100 T c= 0.1 COLLECTOR CURRENT, Ic (A) COMMON EMITTER 0.5 Ic/IB=10 0.1 Tc=100°C 50 COLLECTOR-EMITTER VOLTAGE, VCE (V) 1 Tc=25°C 100 0 0 hFE - Ic 1k COMMON EMITTER Tc=25°C DC CURRENT GAIN, hFE COLLECTOR CURRENT, Ic (A) 12 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE, VCE (V) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R214-003,A UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R214-003,A