UNISONIC TECHNOLOGIES CO., LTD UT9971P

UNISONIC TECHNOLOGIES CO., LTD
UT9971P
Power MOSFET
5.0A, 60V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UT9971P is an N-Channel enhancement mode
power MOSFET providing customers with high switching
speed, cost-effectiveness and minimum on-state resistance.

FEATURES
* RDS(ON) < 50mΩ @ VGS=10V, ID=5A
* High switching speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Note:

UT9971PG-AA3-R
Pin Assignment: G: Gate
D: Drain
Package
SOT-223
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
S: Source
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UT9971P

Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±25
V
Continuous TA=25°C
ID
5
A
Drain Current
Pulsed
IDM
20
A
Power Dissipation (TA=25°C)
PD
2.7
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
θJA
RATINGS
45
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
(Note 2)
SYMBOL
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=60V, VGS=0V, TJ=25°C
VGS=+25V
VGS=-25V
60
VDS=VGS, ID=250µA
VGS=10V, ID=5A
VGS=4.5V, ID=2.5A
VDS=10V, ID=5A
1.0
Forward Transconductance
gFS
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=10V, VDS=48V, ID=5A
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=30V, ID=1A, VGS=10V,
Rise Time
tR
RG=3.3Ω, RD=6Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
IS=5A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300µs, Duty cycle ≤ 2%
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MIN TYP MAX UNIT
V
1
µA
+100 nA
-100 nA
3.0
50
60
7
V
mΩ
mΩ
S
760
188
35
pF
pF
pF
56
5.5
8.8
40
40
170
50
nC
nC
nC
ns
ns
ns
ns
1.2
V
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QW-R502-764.C
UT9971P

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
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UT9971P
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (A)
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (µA)

Safe Operating Area
On-Resistance Characteristics
102
Drain-Source Current, ID (A)
40
Drain Current, ID (A)
101
10ms
100
DC
10-1 Notes:
1. TJ=25°С
2. TJ=150°С
3. Single Pulse
10-2 -1
10
100
100m
s
101
102
Drain-Source Voltage, VDS (V)
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VGS=8V
35
VGS=10V
30
25
VGS=6V
20
15
10
VGS=4V
5
VGS=3V
0
0
1
2
3
4
5
Drain-Source Voltage, VDS(V)
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Power MOSFET
TYPICAL CHARACTERISTICS (Cont.)
Transfer Characteristics
150°С
10
25°С
1
Notes:
1. VDS=5V
2. 250µs Pulse Test
0.1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
Transient Thermal Response Curve
100
Duty=0.5
0.2
-1
10
0.1
0.05
PD
0.02
0.01
t1
t2
10-2
NOTES:
1.θJa(t)=45D/W
2.Duty = t1/t2
3.TJ-TC = PD-θJC(t)
Single pulse
10-4
10-3
10-2
10-1
100
Pulse Width, t1 (sec)
101
102
103
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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