UNISONIC TECHNOLOGIES CO., LTD 2SK508 N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR 3 2 DESCRIPTION SOT-23 The UTC 2SK508 is NPN transistor with High forward transfer admittance and low input capacitance. It is suitable for cordless telephone, AM tuner and wireless installation, etc. 1 (JEDEC TO-236) FEATURES * High forward transfer admittance * Low input capacitance ORDERING INFORMATION Ordering Number 2SK508G-x-AE3-R Note: Pin Assignment: D: Drain S: Source Package SOT-23 Pin Assignment 1 2 3 D S G Packing Tape Reel G: Gate MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-101.C 2SK508 N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Drain Voltage VGDO -15 V Gate to Source Voltage VGSO -15 V Drain to Source Voltage (VGS=-4.0 V) VDSX 15 V Drain Current (DC) ID 50 mA Gate Current (DC) IG 5 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER Gate Cut-Off Current Zero Gate Voltage Drain Current (Note) Gate to Source Cut-Off Voltage Forward Transfer Admittance (Note) Input Capacitance Feedback Capacitance Note: Pulsed: PW≤1ms, Duty Cycle≤1%. SYMBOL IGSS IDSS VGS(off) |yFS|1 |yFS|2 CISS CRSS TEST CONDITIONS VGS=-10V, VDS=0V VDS=5.0V, VGS=0V VDS=5.0V, ID=10μA VDS=5.0V, ID=10mA, f=1.0kHz VDS=5.0V, VGS=0V, f=1.0kHz VDS=5.0V, ID=10mA, f=1.0MHz VDS=5.0V, ID=10mA, f=1.0MHz MIN 10 -0.6 14 14 TYP MAX UNIT -1.0 nA 20 50 mA -1.4 -3.5 V 19 mS 26 mS 4.8 pF 1.6 pF IDSS CLASSIFICATION MARKING IDSS (mA) K51 10 ~ 20 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw K52 15 ~ 30 K53 25 ~ 50 2 of 3 QW-R206-101.C 2SK508 N-CHANNEL JFET TYPICAL CHARACTERISTICS Drain Current vs. Gate-Source Voltage Drain Current vs. Drain-Source Voltage 14 VGS=-4V Drain Current, ID (mA) Drain Current, ID (uA) 10 8 6 4 2 0 VGS=0V 35 12 VGS=-0.2V 30 VGS=-0.4V 25 VGS=-0.6V 20 VGS=-0.8V 15 VGS=-1.0V 10 5 0 5 10 15 20 25 Gate-Source Voltage, VDSX (V) 30 0 0 5 10 15 Drain-Source Voltage, VDS (V) 20 Power Dissipation vs. Ambient Temperature Power Dissipation, PD (mW) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 Ambient Temperature, TA (°C) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-101.C