WSD751S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS P b Lead(Pb)-Free Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package 1 Description: 2 These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping, Extremely low forward voltage reduces conduction loss, Miniature surface mount package is excellent for hand held and portable applications where space is limited. SOD-523 SOD-523 Outline Dimensions S OD-523 Dim A B C D E J K Min 1.10 0.70 0.50 0.25 0.15 0.07 1.50 Max 1.30 0.90 0.70 0.35 0.25 0.20 1.70 P IN 1. C A T HODE 2. A NODE WEITRON http://www.weitron.com.tw WSD751S Maximum Ratings (Ta=25 C Unless otherwise noted) Symbol Value Unit Peak Reverse Voltage VRM 40 DC Reverse Voltage Average Rectifier Forward Current VR 30 Volts Volts IF(AV) 30 mA Peak Forward Surge Current (1) IFSM 200 mA Operating Junction Temperature Range Storage Temperature Range TJ -40 to +125 C Characteristic Electrical Characteristics Tstg (TA=25 C Unless otherwise noted) Characteristic Symbol Min Reverse Breakdown Voltage (IR=100µA) V(BR)R 30 Forward Voltage IF=1.0mA Reverse Leakage VR=30V Capacitance Between Terminals Volts 0.37 Volts IR 0.5 µAdc 2.0 PF NOTE: 1. 60HZ for 1 Device Marking Item Marking WSD751S 5 WEITRON http://www.weitron.com.tw Unit VF CT VR=1V, f=MHZ Max TYP Eqivalent Circuit diagram 1 2 WSD751S Electrical Characteristic Curves (Ta=25°C) 100µ 100m 25 C 10m R E VE R S E C UR R E NT : I R (A) T yp. puls e meas urement T a = 75 C =1 1m Ta F OR WAR D C UR R E NT : I F ( A) 1000m T a = 25 C 100µ T a = -25 C 10µ 1µ 0 0.2 0.4 0.6 0.8 1.0 1.2 T a = 125˚C 10µ T a = 75˚C 1µ T a = 25˚C 100n T a = -25˚C 10n T yp. puls e meas urement 1n 0 1.4 5 F O R W AR D V O L T AG E : V F (V ) F ig. 1 F orward characteris tics C AP AC ITANC E B E TWE E N TE R MINALS : C T (pF ) 10 T a = 25˚C f = 1MHz 50 20 10 5 2 0 2 4 6 8 10 12 14 R E V E R S E V OLT AG E : V R (V ) F ig. 3 C apacitance between terminals characteris tics WEITRON http://www.weitron.com.tw 20 25 30 F ig. 2 R evers e characteris tics 100 1 15 R E V E R S E V O L T AG E : V R (V ) 35