WEITRON WSD520D

WSD520D
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL
SCHOTTKY DIODES
100m AMPERES
30 VOLTS
P b Lead(Pb)-Free
Feature:
* Slicon Epitaxial Planer
* Low Forward Voltage and Low Reverse Current
* High Reliability
* Schottky Barrier Diodes Encapsulated in a SOD-923 Package
1
2
Description:
These schottky barrier diodes are designed for high speed
switching applications circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss.
Miniature surface mount package is excellent for hand held
and portable applications where space is limited.
SOD-923
SOD-923 Outline Dimensions
D
Unit:mm
−X−
−Y−
MILLIMETERS
E
1
b 2X
2
0.08 (0.0032)
X Y
A
C
L
HE
0.90
DIM
MIN
NOM
MAX
A
b
c
D
E
HE
L
0.36
0.15
0.07
0.75
0.55
0.95
0.05
0.40
0.20
0.12
0.80
0.60
1.00
0.10
0.43
0.25
0.17
0.85
0.65
1.05
0.15
0.40
0.30
SOLDERING FOOTPRINT
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1/3
Rev.A 05-Aug-09
WSD520D
Maximum Ratings (TA=25˚C Unless otherwise noted)
Symbol
Value
Unit
VR
30
V
IO
100
mA
Peak Forward Surge Current(1)
IFSM
500
mA
Thermal Resistance, Junction to Ambient
RθJA
520
°C/W
Power Dissipation
PD
150
mW
Operation Junction Temperature Range
TJ
150
˚C
Tstg
-40 to +150
˚C
Characteristic
DC Reverse Voltage
Storage Temperature Range
Electrical Characteristics
(TA=25˚C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF=10mA
VF
-
-
0.45
V
Reverse Leakage
VR=10V
IR
-
-
0.5
µA
NOTE: 1. 60HZ for 1
Device Marking
Item
Marking
WSD520D
E
WEITRON
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Eqivalent Circuit diagram
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Rev.A 05-Aug-09
WSD520D
Electrical Characteristic Curves
(TA =25°C)
100
10
1000000
TA=125°C
TA=75°C
1
TA=-25°C
TA=25°C
0.1
0.01
0.001
0
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
1000
100000
200
300
400
500
600
VF-IF CHARACTERISTICS
Fig.1 FORWARD VOLTAGE:VF(mV)
TA=75°C
10000
1000
TA=25°C
100
TA=-25°C
10
1
100
TA=125°C
0
10
20
30
VR-IR CHARACTERISTICS
Fig.2 REVERSE VOLTAGE:VR(V)
f=1MHz
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
100
10
1
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0
5
10
15
VR-Ct CHARACTERISTICS
Fig.3 REVERSE VOLTAGE:VR(V)
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Rev.A 05-Aug-09