U20D20S thru U20D60S ® Pb U20D20S/U20D40S/U20D60S Pb Free Plating Product 20 Ampere Dual Tandem Type Ultra Fast Recovery Rectifier Diodes TO-3P/TO-247AD Unit: inch (mm) Features .839(21.3) .819(20.8) .600(15.25) .580(14.75) .126(3.2) .110(2.8) .050(1.25) .045(1.15) .798(20.25) .777(19.75) .095(2.4) Mechanical Data .199(5.05) .175(4.45) .142(3.6) .125(3.2) .170(4.3) .145(3.7) .640(16.25) .620(15.75) Dual rectifier construction, positive center-tap Plastic package has Underwriters Laboratory Flammability Classification 94V0 Glass passivated chip junctions Superfast recovery time, high voltage Low forward voltage, high current capability Low thermal resistance Low power loss, high efficiency High temperature soldering guaranteed: o 260 C, 0.16”(4.06mm)from case for 10 seconds .087(2.2) .070(1.8) .030(0.75) .017(0.45) Cases: TO-3P/TO-247AD molded plastic Terminals: Pure tin plated, lead free solderable per MIL-STD-750. Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 10in-lbs. Max. Weight: 6.5 gram approximately .225(5.7) .204(5.2) .225(5.7) .204(5.2) Case Case Case Case Reverse Doubler Doubler Negative Positive Common Cathode Common Anode Tandem Polarity Tandem Polarity Suffix "S" Suffix "A" Suffix "D" Suffix "C" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL U20D20S U20D40S U20D60S UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified 20.0 IF(AV) o Current TC=125 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 200 VF 0.98 175 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Operating Junction and Storage Temperature Range TJ, TSTG 1.7 1.3 V 5.0 uA 100 uA 35 nS 70 120 -55 to +150 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ U20D20S thru U20D60S ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 20 16 10 8 6 4 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 U20D20S 125 100 U20D40S-U20D60S 75 50 25 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o U20D20S U20D40S 10 U20D60S 0.1 TJ=25 oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/