CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02 Description The BHŜŜFB1W, BHŜŜLB1W and BHŜŜMA3W series are low dropout CMOS regulators with 150 mA and 300 mA output that have ±1% high accuracy output voltage. The BHŜŜFB1W series combines 40µA low current consumption and a 70 dB high ripple rejection ratio by utilizing output level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small HVSOF5/HVSOF6 packages. Features 1) High accuracy output voltage: ±1% 2) High ripple rejection ratio: 70 dB (BHŜŜFB1WHFV/WG, BHŜŜLB1WHFV/WG) 3) Low dropout voltage: 60 mV (when current is 100 mA) (BHŜŜMA3WHFV) 4) Stable with ceramic output capacitors 5) Low Bias current : 40µA (IO = 50 mA) (BHŜŜFB1WHFV/WG) 6) Output voltage ON/OFF control 7) Built-in over-current protection and thermal shutdown circuits 8) Ultra-small power package: HVSOF5 (BHŜŜFB1WHFV, BHŜŜLB1WHFV) 9) Ultra-small power package: HVSOF6 (BHŜŜMA3WHFV) Applications Battery-driven portable devices and etc. Line up 150mA BHŜŜFB1W and BHŜŜLB1W Series Part Number 1.5 1.8 1.85 BHŜŜFB1WG - - - SSOP5 BHŜŜFB1WHFV - - - HVSOF5 - BHŜŜLB1WG BHŜŜLB1WHFV 2.5 2.8 2.9 3.0 3.1 3.3 Package - - - - - - SSOP5 - - - - - - HVSOF5 2.8 2.9 3.0 3.1 3.3 300mA BHŜŜMA3WHFV series Part Number 1.5 1.8 2.5 BHŜŜMA3WHFV Part Number: B H ŜŜ F B 1 W Ŝ , B H ŜŜ L B 1 W Ŝ a b a b Symbol a b Details Output Voltage Designation ŜŜ Output Voltage (V) Output Voltage (V) ŜŜ 15 1.5V (Typ.) 2.9V (Typ.) 29 18 1.8V (Typ.) 3.0V (Typ.) 30 1J 1.85V (Typ.) 3.1V (Typ.) 31 25 2.5V (Typ.) 3.3V (Typ.) 33 28 2.8V (Typ.) Package: G : SSOP5 HFV : HVSOF5 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. Package HVSOF6 Part Number: B H ŜŜ M A 3 W Ŝ a b Symbol a b 1/8 Details Output Voltage Designation ŜŜ Output Voltage (V) Output Voltage (V) ŜŜ 15 1.5V (Typ.) 2.9V (Typ.) 29 18 1.8V (Typ.) 3.0V (Typ.) 30 25 2.5V (Typ.) 3.1V (Typ.) 31 28 2.8V (Typ.) 3.3V (Typ.) 33 Package: HFV : HVSOF6 2010.07 - Rev. C BH ĄĄFB1WG series, BHĄĄFB1WHFV series, BH ĄĄLB1WG series, BHĄĄLB1WHFV series, Technical Note BH ĄĄMA3WHFV series Absolute maximum ratings (Ta = 25 C) Parameter Applied supply voltage Symbol VMAX Pd Limits -0.3 ~ +6.5 680 (HVSOF6) 410 (HVSOF5) Topr Tstg 540 (SSOP5) -40 ~ +85 -55 ~ +125 Power dissipation Operating temperature range Storage temperature range Unit V mW C C Recommended operating range Parameter Power supply voltage Output current BH MA3W BH FB1W BH LB1W Symbol Min. Typ. VIN 2.5 - 5.5 V - - 300 mA - - 150 mA - - 150 mA IOUT Max. Unit Recommended operating conditions Symbol Min. Typ. Max. Unit Input capacitor Parameter CIN 0.1 - - μF Output capacitor Co 1.0 - - μF Ceramic capacitor recommended Noise decrease capacitor Cn - 0.01 0.22 μF Ceramic capacitor recommended Max. VOUT 1.01 70 1.0 450 20 30 90 420 3 450 5 - Unit V μA μA dB mV mV mV mV mV mA Conditions IOUT=1mA IOUT=50mA STBY=0V VRR=-20dBv, fRR=1kHz, IOUT=10mA IOUT=1mA to 30mA IOUT=30mA to 1mA VIN=0.98 VOUT, IOUT=100mA 4 VIN=VOUT+0.5V to 5.5V IOUT=1mA to 100mA IOUT=1mA to 150mA mA Vo=VOUT 0.98 mA Vo=0V 2200 Vcc 0.3 kΩ V V BH FB1WHFV/WG , BH Parameter Output voltage Circuit current Circuit current(STBY) Ripple rejection ratio Load response 1 Load response 2 Dropout voltage Line regulation Load regulation (1) Load regulation (2) Over current protection limit current Short current STBY pull-down resistor ON STBY control voltage OFF 1 3 Conditions Ceramic capacitor recommended LB1WHFV/WG Symbol Min. VOUT VOUT 0.99 I GND I STBY RR LTV1 LTV2 VSAT VDL1 VDL01 VDL02 150 3 ILMAX 150 5 I SHORT RSTB VSTBH VSTBL 550 1.5 -0.3 Typ. VOUT 40 70 50 50 250 2 10 15 250 300 50 40 1100 - 3 5 3 5 5 BH BH25,28,29,30,31,33WHFV/G MA3WHFV Parameter Symbol Min. VOUT Typ. Max. VOUT I GND - I STBY RR Unit Conditions V IOUT=1mA μA IOUT=1mA 65 95 - - 1.0 μA STBY=0V - 60 - dB VRR=-20dBv, fRR=1kHz, IOUT=10mA VSAT1 - 60 90 mV VIN=0.98 X V OUT, IOUT=100mA VDL1 - 2 20 mV VIN=VOUT+0.5V to 5.5V VDL01 - 6 30 mV IOUT=1mA to 100mA VDL02 - 18 mV IOUT=1mA to 300mA - ±100 90 - - 600 100 - ILMAX I SHORT www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 2/8 ppm/ C IOUT=1mA, Ta=-40 to +85 C mA mA Vo=VOUT X 0.85 Vo=0V 2010.07 - Rev. C BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, Technical Note BH □□MA3WHFV series Typical characteristics • Output voltage-input voltage 1.5 4 BH28FB1WHFV ~ Condition ~ ~ Condition ~ VIN=0 to 5.5V VIN=0 to 5.5V VIN=0 to 5.5V Cin=0.1μF Cin=0.1μF Cin=1.0μF 3 Co=1.0μF ROUT=1.5kΩ Ta=25°C 1 3 Co=1.0μF ROUT=2.8kΩ Ta=25°C 2 0.5 1 0 1 1.5 2 2.5 3 3.5 4 Input Voltage VIN[V] 4.5 5 5.5 Co=1.0μF Cn=none ROUT=3.0kΩ Ta=25°C 2 1 0 0 0.5 BH30MA3WHFV ~ Condition ~ Output Voltage VOUT[V] Output Voltage VOUT[V] 4 BH15LB1WHFV Output Voltage VOUT[V] 2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage VIN[V] 4.5 5 0 5.5 0.5 1 4 4.5 5 5.5 Fig.3 Fig.2 Fig.1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] • GND current-input voltage VIN=0 to 5.5V VIN=0 to 5.5V 50 Cin=0.1μF Cin=0.1μF Co=1.0μF Co=1.0μF ROUT=1.5kΩ 40 Ta=25°C 30 20 100 BH28FB1WHFV ~ Condition ~ GND Current IGND[μA] 50 GND Current IGND[μA] 60 BH15LB1WHFV ~ Condition ~ ROUT=2.8kΩ 40 Ta=25°C 30 20 VIN=0 to 5.5V 80 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Input Voltage VIN[V] Cn=none ROUT=3.0kΩ 60 Ta=25°C 40 20 0 0 0.5 1 Cin=1.0μF Co=1.0μF 10 10 BH30MA3WHFV ~ Condition ~ GND Current IGND[μA] 60 0 0 0.5 1 Fig.4 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 0 5.5 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5 Fig.6 Fig.5 • Output voltage-output current 3.5 BH15LB1WHFV 3 Ta=25°C 1 VIN=4.0V VOUT=2.83V to 0V Output Voltage VOUT[V] Output Voltage VOUT[V] Co=1.0μF ~ Condition ~ 3 VIN=3.8V VOUT=1.53V to 0V Cin=0.1μF BH30MA3WHFV ~ Condition ~ VIN=3.5V 1.5 3.5 BH28FB1WHFV ~ Condition ~ VOUT=3.03V to 0V 2.5 Cin=0.1μF 2.5 Co=1.0μF Ta=25°C 2 1.5 Output Voltage[V] 2 Cin=1.0μF Co=1.0μF Cn=none 2 Ta=25°C 1.5 1 1 0.5 0.5 0.5 0 0 0 0 100 200 300 Output Current IOUT[mA] 0 400 50 Fig.7 100 150 200 Output Current IOUT[mA] 250 300 0 100 200 300 400 500 Output Current IOUT[mA] 600 700 Fig.9 Fig.8 • Dropout voltage-output current 500 300 BH28FB1WHFV ~ Condition ~ VIN=2.74V Cin=0.1μF Co=1.0μF Ta=25°C 300 200 100 0 VIN=2.940V 250 IOUT=0 to 150mA Dropout Voltage VSAT[mV] Dropout Voltage VSAT[mV] 400 BH30MA3WHFV ~ Condition ~ IOUT=0 to 300mA Cin=1.0μF Co=1.0μF 200 Cn=none Ta=25°C 150 100 50 0 0 50 100 Output Current IOUT[mA] 150 Fig.10 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 0 50 100 150 200 Output Current IOUT[mA] 250 300 Fig.11 3/8 2010.07 - Rev. C BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, Technical Note BH □□MA3WHFV series Typical Characteristics • Output voltage-temperature Ω Ω ° ° ° ° Ω ° ° • Ripple reflection-frequency Ω Ω Ω ° ° ° • Load response characteristics (CO = 1.0 μF) ° ° ° • Output voltage startup time ° ° www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 4/8 2010.07 - Rev. C BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, Technical Note BH □□MA3WHFV series Block diagrams Power supply input Ground Output voltage ON/OFF control (High: ON, Low: OFF) NO CONNECT Voltage output Output voltage ON/OFF control (High: ON, Low: OFF) Ground Power supply input Voltage output NO CONNECT Terminal No. Terminal Name Function Power supply input Voltage output Voltage output Noise reducing capacitor ground terminal Ground Output voltage ON/OFF control (High: ON, Low: OFF) Power dissipation Pd 1. Power dissipation Power dissipation calculation include estimates of power dissipation characteristics and internal IC power consumption and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX) Input voltage Output voltage Output current 2. Power dissipation characteristics (Pd) Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB ° Fig. 26: HVSOF6 Power Dissipation/ Power Dissipation Reduction (Example) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. ° Fig. 27: HVSOF5 Power Dissipation/ Power Dissipation Reduction (Example) 5/8 Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB ° Fig. 28: SSOP5 Power Dissipation/ Power Dissipation Reduction (Example) 2010.07 - Rev. C BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, Technical Note BH □□MA3WHFV series Input capacitor It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring routes are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R or better models that offer good temperature and DC bias characteristics and high torelant voltages. 120 100 50V torelance 80 60 10V torelance 16V torelance 40 20 0 100 Rate of change in electrostatic capacitance (%) Rate of change in electrostatic capacitance (%) Rate of change in electrostatic capacitance (%) Examples of ceramic capacitor characteristics 50V torelance 95 90 16V torelance 85 10V torelance 80 75 70 1 2 3 4 DC bias Vdc (V) Fig. 30: Capacitance-bias characteristics (X5R, X7R) 1 2 3 4 DC bias Vdc (V) Fig. 29: Capacitance-bias characteristics (Y5V) 0 0 120 100 80 X7R X5R Y5V 60 40 20 0 -25 0 25 50 75 Temperature (°C) Fig. 31: Capacitance–temperature characteristics (X5R, X7R, Y5V) Output capacitor To prevent oscillation at the output, it is recommended that the IC be operated at the stable region show in below Fig. It operates at the capacitance of more than 1.0μF. As capacitance is larger, stability becomes more stable and characteristic of output load fluctuation is also improved. BHŜŜLB1WHFV/WG Ta=+25°C 100 1 Stable region 0.1 0.01 Ta=+25°C BHŜŜMA3WHFV 100 1 Stable region 50 100 Output current IOUT(mA) 150 Fig. 32 BHŜŜLB1WHFV/WG Stable operating region characteristics (Example) 0.01 Cin=1.0μF Ta=+25°C 1 Stable region 0.1 0.1 0 Cout=1.0μF 10 10 ESR(Ω) ESR(Ω) 10 Cout=2.2μF ESR(Ω) 100 Cout=1.0μF BHŜŜFB1WHFV/WG 0.01 0 50 100 150 Output current IOUT(mA) Fig. 33 BHŜŜFB1WHFV/WG Stable operating region characteristics (Example) 0 100 200 Output current IOUT(mA) 300 Fig. 34 BHŜŜMA3WHFV Stable operating region characteristics (Example) Other precautions • Over current protection circuit The IC incorporates a built-in over current protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuits use fold-back type current limiting and are designed to limit current flow by not latching up in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. • Thermal shutdown circuit This system has a built-in thermal shutdown circuit for the purpose of protecting the IC from thermal damage. As shown above, this must be used within the range of power dissipation, but if the power dissipation happens to be continuously exceeded, the chip temperature increases, causing the thermal shutdown circuit to operate. When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip temperature decreases, so the output repeats the ON and OFF states. There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state. • Actions in strong magnetic fields Use caution when using the IC in the presence of a strong magnetic field as such environments may occasionally cause the chip to malfunction. • Back current In applications where the IC may be exposed to back current flow, it is recommended to create a route t dissipate this current by inserting a bypass diode between the V IN and V OUT pins. • GND potential Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND pin carry a voltage less than or equal to the GND pin, including during actual transient phenomena. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 6/8 2010.07 - Rev. C BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, Technical Note BH □□MA3WHFV series Noise terminal (BHŜŜMA3WHFV) The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding 100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A bigger capacitor value will result in lesser oscillation but longer boot-up time for VOU T. VOUT startup time t (msec) 100 BH30MA3WHFV ~ Condition ~ VIN=4.0V Cin=1.0μF Co=1.0μF ROUT=3.0kΩ Ta=25°C 10 1 0.1 0.01 100P 1000P 0.01μ 0.1μ noise-filtering capacitor capacitance Cn (F) Fig. 35: V OUT startup time vs. noise-filtering capacitor capacitance characteristics (Example) Regarding input pin of the IC This monolithi c IC contains P+ isolation and P substrat e layer s between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in Fig.37 The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN). Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltage lower than the GND (P substrate) voltage to input pins. Transistor (NPN) OUT VCC CTL GND Fig. 36: Example of bypass diode connection (Terminal B) B Resistor (Terminal A) back current (Terminal B) O C E B E GND P+ N P+ P P+ GND Other adjacent elements P+ P N Parasitic elements N N N N N (Terminal A) P P-board P Parasitic element Parasitic element GND Parasitic elements GND GND Fig.37 Part number selection B H ROHM part number 3 0 Output voltage F B 1 Current capacity MA3 : 300mA FB1 : 150mA LB1 : 150mA www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. W Shutdown switch W : With switch 7/8 H F V Package HFV : HVSOF6 HVSOF5 G : SSOP5 - T R Package specification TR : Embossed taping 2010.07 - Rev. C BH □□MA3WHFV series Technical Note (Unit:mm) (Unit:mm) (Unit:mm) 0.1 SSOP5 (0.45) (1.2) 0.13±0.05 (1.4) 123 0.22±0.05 (0.15) 3 2 1 654 3.0±0.1 5 2.6±0.1 (0.41) (0.91) 4 (1.5) 1.6±0.1 0.2Max. (0.05) 1.6±0.05 0.42 +0.05 -0.04 0.95 1 2 3 0.6Max. 0.05±0.05 1.25Max. 1.1±0.05 0.13 +0.05 -0.03 0.3 5 4 1.2±0.05 3 0.8 (1.28MAX.) 2 1.0±0.05 0.2Min. +0.2 2.8±0.2 1.6 -0.1 1 (1.8MAX.) 1.6±0.05 4 0.75Max. +6° 4° - 4° 2.9±0.2 5 (2.8MAX.) BH □□FB1WG series, BH□□FB1WHFV series, BH □□LB1WG series, BH□□LB1WHFV series, 0.145±0.05 S 0.1 S 0.22±0.05 0.5 0.5 HVSOF5 HVSOF6 (Package Specification) HVSOF6 (Package Specification) SSOP5, HVSOF5 Package Form Embossed taping Package Form Embossed taping Package Quantity 3000pcs Package Quantity 3000pcs Package Orientation TR (When the reel is held with the left hand and the tape is drawn out with the right hand, the No. 1 pin of the product faces the upper right direction.) Package Orientation TR (When the reel is held with the left hand and the tape is drawn out with the right hand, the No. 1 pin of the product faces the upper right direction.) No. 1 pin Pulling side Reel * Please make orders in multiples of the package quantity. * Please make orders in multiples of the package quantity. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 8/8 2010.07 - Rev. 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