SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP® 3 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 41 kVA • Typical motor power 22 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 ... +150°C) • for short circuit: Soft RGoff recommended Tj = 175 °C V 103 A Ts = 70 °C 79 A Ts = 25 °C 115 A Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1200 93 A 100 A 300 A -20 ... 20 V 10 µs -40 ... 175 °C 1200 V Ts = 25 °C 103 A Ts = 70 °C 79 A Ts = 25 °C 115 A Ts = 70 °C 93 A 100 A 300 A -20 ... 20 V 10 µs -40 ... 175 °C Tj = 150 °C Chopper - IGBT VCES Features Tj = 150 °C Ts = 25 °C ICnom tpsc SKiiP 38NAB12T4V1 Tj = 25 °C IC Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 89 A Ts = 70 °C 66 A Ts = 25 °C 99 A Ts = 70 °C 79 A 100 A IFnom IFRM IFRM = 3 x IFnom 300 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 550 A -40 ... 175 °C Tj Freewheeling - Diode VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 89 A Ts = 70 °C 66 A Ts = 25 °C 100 A Ts = 70 °C 79 A 100 A 300 A IFnom IFRM IFRM = 3 x IFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj 550 A -40 ... 175 °C NAB © by SEMIKRON Rev. 22 – 02.12.2011 1 SKiiP 38NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode VRRM Tj = 25 °C 1600 V IF Ts = 25 °C, Tj = 150 °C 117 A IFnom MiniSKiiP® 3 45 A 1000 A IFSM 10 ms sin 180° Tj = 25 °C Tj = 150 °C 890 A I2t 10 ms sin 180° Tj = 25 °C 5000 A2s Tj = 150 °C 3900 A2s -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C, 20A per spring Tstg SKiiP 38NAB12T4V1 Visol AC sinus 50Hz, 1 min 80 A -40 ... 125 °C 2500 V Characteristics Features Symbol Conditions • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Inverter - IGBT IC = 100 A VCE(sat) VGE = 15 V chiplevel VCE0 Typical Applications* rCE • Inverter up to 41 kVA • Typical motor power 22 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 ... +150°C) • for short circuit: Soft RGoff recommended VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 10 12 m Tj = 150 °C 15 16 m VGE(th) VGE = VCE V, IC = 4 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.8 6.5 V Tj = 25 °C 5 0.1 0.3 mA f = 1 MHz 6.15 nF f = 1 MHz 0.41 nF f = 1 MHz 0.34 nF mA QG - 8 V...+ 15 V 565 nC RGint Tj = 25 °C 7.50 td(on) VCC = 600 V IC = 100 A RG on = 1 RG off = 1 tr Eon td(off) tf Eoff VGE = +15/-15 V Rth(j-s) per IGBT Chopper - IGBT IC = 100 A VCE(sat) VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 150 °C 160 ns Tj = 150 °C 35 ns Tj = 150 °C 11.2 mJ Tj = 150 °C 390 ns Tj = 150 °C 75 ns Tj = 150 °C 10 mJ 0.48 K/W Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 10 12 m m Tj = 150 °C VGE(th) VGE = VCE V, IC = 4 mA ICES VGE = 0 V VCE = 1200 V Tj = 25 °C 5 15 16 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA QG - 8 V...+ 15 V 565 nC RGint Tj = 25 °C 7.50 NAB 2 Rev. 22 – 02.12.2011 © by SEMIKRON SKiiP 38NAB12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Chopper - IGBT td(on) tr Eon td(off) tf MiniSKiiP® 3 SKiiP 38NAB12T4V1 VCC = 600 V IC = 100 A RG on = 1 RG off = 1 Eoff VGE = +15/-15 V Rth(j-s) per IGBT Inverse - Diode VF = VEC IF = 100 A VGE = 0 V chiplevel VF0 rF Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 41 kVA • Typical motor power 22 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 ... +150°C) • for short circuit: Soft RGoff recommended IRRM Qrr Err Rth(j-s) rF Qrr Err Rth(j-s) 160 ns Tj = 150 °C 35 ns Tj = 150 °C 11.2 mJ Tj = 150 °C 390 ns Tj = 150 °C 75 ns Tj = 150 °C 10 mJ 0.48 K/W Tj = 25 °C 2.2 2.5 V Tj = 150 °C 2.1 2.5 V V Tj = 25 °C 1.3 1.5 Tj = 150 °C 0.9 1.1 V Tj = 25 °C 9.0 10 m 13 14 m Tj = 150 °C IF = 100 A Tj = 150 °C di/dtoff = 2400 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per Diode Freewheeling - Diode VF = VEC IF = 100 A VGE = 0 V chiplevel VF0 IRRM Tj = 150 °C A 16.4 µC 6.5 mJ 0.66 K/W Tj = 25 °C 2.2 2.5 V Tj = 150 °C 2.1 2.5 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 9.0 10 m Tj = 150 °C 13 14 m IF = 100 A Tj = 150 °C di/dtoff = 2400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per Diode Rectifier - Diode VF = VEC IF = 45 A VGE = 0 V chiplevel VF0 82 Tj = 25 °C 82 A 16.4 µC 6.5 mJ 0.66 K/W 1 1.21 V Tj = 125 °C 1.1 V Tj = 25 °C 1.0 V Tj = 125 °C Tj = 25 °C rF 2.7 Tj = 125 °C Rth(j-s) 0.8 V 5.2 m 6.0 per Diode 0.7 m K/W Module Ms to heat sink 2 w 2.5 Nm 95 g 1670 ± 3% Temperatur Sensor R100 Tr = 100 °C, tolerance = 3 % 2 R(T) R(T)=1000[1+A(T-25°C)+B(T-25°C) ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 NAB © by SEMIKRON Rev. 22 – 02.12.2011 3 SKiiP 38NAB12T4V1 Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 22 – 02.12.2011 © by SEMIKRON SKiiP 38NAB12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic © by SEMIKRON Rev. 22 – 02.12.2011 5 SKiiP 38NAB12T4V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 22 – 02.12.2011 © by SEMIKRON