SKiM401TMLI12E4B Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 348 A Ts = 70 °C 264 A Ts = 25 °C 388 A Ts = 70 °C 312 A 400 A 1200 A -20 ... 20 V 10 µs -40 ... 175 °C Values Unit 650 V Ts = 25 °C 283 A Ts = 70 °C 209 A Ts = 25 °C 319 A Ts = 70 °C 252 A 400 A 800 A -20 ... 20 V 10 µs -40 ... 175 °C Values Unit ICnom SKiM® 4 ICRM VGES Trench IGBT Modules SKiM401TMLI12E4B tpsc Tj • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Absolute Maximum Ratings Symbol Features ICRM = 3 x ICnom Conditions IGBT 2 VCES IC IC Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom ICRM VGES tpsc Tj ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tterminal = 80 °C, Tstg Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C Visol AC sinus 50 Hz, t = 1 min 400 A -40 ... 125 °C 2500 V TMLI © by SEMIKRON Rev. 0 – 27.09.2013 1 SKiM401TMLI12E4B Absolute Maximum Ratings Symbol Conditions Values Unit Diode 1 VRRM IF IF Tj = 25 °C Tj = 175 °C Tj = 175 °C 1200 V Ts = 25 °C 311 A Ts = 70 °C 245 A Ts = 25 °C 311 A Ts = 70 °C 245 A IFnom SKiM® 4 Trench IGBT Modules 400 A IFRM IFRM = 3 x IFnom 1200 A IFSM 10 ms, sin 180°, Tj = 150 °C 1980 A -40 ... 175 °C Values Unit Tj Absolute Maximum Ratings SKiM401TMLI12E4B Symbol Features IF VRRM • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Conditions Diode 2 IF Tj = 25 °C Tj = 175 °C Tj = 175 °C 650 V Ts = 25 °C 334 A Ts = 70 °C 256 A Ts = 25 °C 334 A Ts = 70 °C 256 A 400 A IFnom IFRM IFSM IFRM = 2xIFnom 10 ms sin 180° Tj = 25 °C Tj = 150 °C Tj 800 A 2646 A 2322 A -40 ... 175 °C Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C TMLI 2 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM401TMLI12E4B Characteristics Symbol IGBT 1 VCE(sat) VCE0 SKiM® 4 Trench IGBT Modules SKiM401TMLI12E4B Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 2.5 2.9 m 3.8 4.0 m 5.8 6.5 V rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 15.2 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C VCE = 300 V IC = 400 A RG on = 2 RG off = 2 di/dton = 4822 A/µs di/dtoff = 2259 A/µs VGE neg = -15 V VGE pos = 15 V per IGBT td(on) tr Eon td(off) tf Eoff Rth(j-s) Tj = 150 °C 5 Tj = 25 °C mA mA f = 1 MHz 24.6 nF f = 1 MHz 1.62 nF f = 1 MHz 1.38 nF 2242.3 nC 1.88 Tj = 150 °C 290.57 ns Tj = 150 °C 92.57 ns Tj = 150 °C 8.83 mJ Tj = 150 °C 474 ns Tj = 150 °C 121.7 ns Tj = 150 °C 25.83 mJ 0.16 K/W Characteristics Symbol IGBT 2 VCE(sat) VCE0 Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.55 1.95 V Tj = 150 °C 1.75 2.1 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 1.6 2.4 m 2.3 3.0 m 5.8 6.4 V rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 8 mA ICES VGE = 0 V VCE = 650 V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C VCE = 300 V IC = 400 A RG on = 2 RG off = 2 di/dton = 5566 A/µs di/dtoff = 1547 A/µs VGE neg = -15 V VGE pos = 15 V per IGBT td(on) tr Eon td(off) tf Eoff Rth(j-s) Tj = 150 °C 5.1 Tj = 25 °C mA Tj = 150 °C f = 1 MHz mA 24.67 f = 1 MHz f = 1 MHz nF nF 0.732 nF 2718.25 nC 1.00 Tj = 150 °C 149.14 ns Tj = 150 °C 79.7 ns Tj = 150 °C 3.32 mJ Tj = 150 °C 420 ns Tj = 150 °C 180 ns Tj = 150 °C 20.91 mJ 0.25 K/W TMLI © by SEMIKRON Rev. 0 – 27.09.2013 3 SKiM401TMLI12E4B Characteristics Symbol Diode 1 VF = VEC VF0 rF SKiM® 4 IRRM Trench IGBT Modules SKiM401TMLI12E4B Qrr Err Rth(j-s) Diode 2 • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IF = 400 A VGE = 15 V chiplevel chiplevel chiplevel IF = 400 A di/dtoff = 1430 A/µs min. Tj = 25 °C Tj = 150 °C typ. max. Unit 2.20 2.52 V 2.15 2.47 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 2.0 2.3 2.5 m Tj = 150 °C 2.6 3.1 3.4 m 176.57 VR = 300 V per DIODE A 28.63 µC 2.391 mJ 0.24 K/W Characteristics Symbol Features Conditions VF = VEC VF0 rF IRRM Qrr Err Rth(j-s) Conditions min. typ. max. Unit IF = 400 A Tj = 25 °C 1.4 1.80 V chiplevel Tj = 150 °C 1.38 1.76 V 1.04 1.236 V 0.85 0.99 V 0.9 1.3 m 1.3 1.9 m chiplevel chiplevel IF = 400 A di/dtoff = 1182 A/µs Tj = 25 °C 0.95 Tj = 150 °C Tj = 25 °C Tj = 150 °C VR = 300 V per DIODE 0.6 168.85 A 31.66 µC 2.26 mJ 0.29 K/W Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C TMLI 4 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM401TMLI12E4B Characteristics Symbol Conditions min. typ. max. Unit Module LCE RCC'+EE' terminal-chip Rth(c-s) per module Ms to heat sink (M5) nH 1.35 m Ts = 125 °C 1.75 m K/W to terminals M6 Mt SKiM® 4 18 Ts = 25 °C 2 3 Nm 4 5 Nm Nm w Trench IGBT Modules Features g Characteristics Symbol SKiM401TMLI12E4B 317 Conditions min. typ. max. Unit Temperature Sensor R100 Tr = 100 °C, tolerance = 3 % B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C TMLI © by SEMIKRON Rev. 0 – 27.09.2013 5 SKiM401TMLI12E4B Fig. 1: Typ. IGBT 1 output characteristic, incl. RCC'+ EE' Fig. 3: Typ. IGBT 2 output characteristic, inclusive RCC'+ EE' Fig. 5: Typ. IGBT 1 turn-on /-off energy = f (IC) 6 Fig. 2: Typ. Diode 1 output characteristics Fig.4: Typ. Diode 2 output characteristic Fig. 6: Typ. IGBT 2 turn-on /-off energy = f (IC) Rev. 0 – 27.09.2013 © by SEMIKRON SKiM401TMLI12E4B Fig. 7: Typ. IGBT 1 turn-on /-off energy = f (RG) Fig. 8: Typ. IGBT 2 turn-on /-off energy = f (RG) Fig. 9: Typ. IGBT 1 gate charge characteristic Fig. 10: Typ. IGBT 2 gate charge characteristic Fig. 11: Typ. IGBT 1 switching times vs. gate resistor RG Fig. 12: Typ. IGBT 2 switching times vs. gate resistor RG © by SEMIKRON Rev. 0 – 27.09.2013 7 SKiM401TMLI12E4B Fig. 13: Typ. IGBT 1 switching times vs. IC Fig. 14: Typ. IGBT 2 switching times vs. IC Fig.15: Typ. DIODEs transient thermal impedence Fig. 16: Typ. IGBTs transient thermal impedence 8 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM401TMLI12E4B TMLI This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 27.09.2013 9