ES2ABF THRU ES2JBF SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER Reverse Voltage - 50 to 600 Volts SMBF FEATURES Cathode Band Top View 0.146(3.70) 0.138(3.50) Forward Current - 2.0 Amperes For surface mounted applications Low profile package Glass Passivated Chip Junction Superfast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU diretives 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) MECHANICAL DATA 0.051(1.30) 0.039(1.0) Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) VRRM VRMS VDC ES2ABF ES2BBF ES2DBF ES2GBF ES2JBF E2AB E2BB E2DB E2GB E2JB 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 UNITS VOLTS VOLTS VOLTS I(AV) 2.0 Amps IFSM 50 Amps VF IR trr CJ Typical thermal resistance (NOTE 3) RθJA Operating junction and storage temperature range TJ,TSTG 1.25 1.0 5.0 100.0 35 45.0 65.0 -55 to +150 1.65 Volts µA ns pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES ES2ABF THRU ES2JBF Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 2.4 300 2.0 100 I R- Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 1.6 1.2 0.8 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 0.4 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 80 60 100 % of PIV.VOLTS Fig.4 Typical Forward Characteristics Fig.5 Typical Junction Capacitance 70 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 40 20 1.0 ES2ABF~ES2DBF ES2EBF/WS2GBF 0.1 ES2JBF 0.01 0.001 0.5 0 1.5 1.0 2.0 2.5 Instaneous Forward Voltage (V) 60 50 40 30 T J =25°C f = 1.0MHz V sig = 50mV p-p 20 10 0.1 1 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 60 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 10 00 1 10 100 Number of Cycles ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ