S2ABF THRU S2MBF SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts SMBF FEATURES Cathode Band Top View 0.146(3.70) 0.138(3.50) Forward Current - 2.0 Amperes For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU diretives 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) MECHANICAL DATA 0.051(1.30) 0.039(1.0) Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=65 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) VRRM VRMS VDC S2ABF S2BBF S2DBF S2GBF S2JBF S2KBF S2MBF S2AB S2BB S2DB S2GB S2JB S2KB S2MB 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS VOLTS VOLTS VOLTS I(AV) 2.0 Amps IFSM 60 Amps VF 1.1 Volts IR 5.0 100.0 µA CJ 30 pF RθJA 55 C/W Operating junction and storage temperature range TJ,TSTG -55 to +150 C Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES S2ABF THRU S2MBF Fig.2 Typical Reverse Characteristics 2.5 100LFM 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 Ambient Temperature (°C) 20 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) 10 Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 60 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 10 00 1 10 100 Number of Cycles ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ