Semiconductor Temperature Sensors

Application Report
SNAA267 – April 2015
Semiconductor Temperature Sensors Challenge Precision
RTDs and Thermistors in Building Automation
Thomas Kuglestadt
ABSTRACT
Standalone semiconductor sensors have rarely been considered for implementation into sensor probes or
assemblies due to their larger geometries. However, advances in process technology and design have led
to new, tiny sensor structures with almost linear transfer functions.
In order to provide system designers with this new low-cost alternative to precision temperature
measurement, this application report discusses the new LMT70 temperature sensor, whose footprint is
less than 1 mm2, while its parametric performance challenges the accuracy of RTDs at cost levels lower
than those of thermistors.
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Contents
Introduction ................................................................................................................... 2
Resistance Temperature Detectors (RTDs) .............................................................................. 2
Thermistors (NTCs).......................................................................................................... 4
Semiconductor Temperature Sensors .................................................................................... 5
The LMT70 ................................................................................................................... 6
Accuracy and Calibration ................................................................................................... 7
4-to-20 mA Temperature Transmitters .................................................................................. 10
References .................................................................................................................. 10
List of Figures
1
Resistance – Temperature Curve for PT100 ............................................................................. 2
2
Accuracy Classes for RTDs ................................................................................................ 3
3
R-T Curve Comparison Between Thermistors and RTD
4
Accuracy Comparison Between Precision RTDs and Standard and Precision Thermistors....................... 5
5
Principle of Eliminating IC and IS
6
VPTAT Temperature Sensor .................................................................................................. 6
7
Simplified Block Diagram ................................................................................................... 7
8
Circuit Examples for Noise-Free and Noisy Environments ............................................................. 7
9
LMT70 Accuracy Over Temperature ...................................................................................... 8
10
Sensor Output Characteristic Versus Typical Characteristic ........................................................... 8
11
Two-Point Calibration Requires Offset Adjustment (left), Gain Adjustment (middle) to Yield the Final
Transfer Function (right) .................................................................................................... 9
12
Sensor Accuracy After Initial 2-Point Calibration and Further Fine-Tuning .......................................... 9
13
High Precision Temperature Transmitter With 4-to-20 mA Output .................................................. 10
14
Low-Cost Temperature Transmitter With 4-to-20 mA Output
...............................................................
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1
Introduction
1
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Introduction
Temperature measurement applications in building automation and here, in particular, commercial airconditioning use a wide variety of temperature sensors, such as thermocouples, resistance temperature
detectors (RTDs), and measurement resistors with negative temperature coefficient also known as NTC
thermistors.
High temperature applications, such as flame detection in boiler systems for example, approaching
temperatures of several hundred and up to thousand degrees require the use of thermocouple or RTDs.
The majority of temperature-sensing applications measuring refrigerant, water and air temperatures,
however, are limited to a range from 0°C to 100°C (32F to 212F).
This temperature range is commonly monitored by temperature probes utilizing RTDs and thermistors,
with the RTDs being perceived as the more accurate and stabile, but also more costly, and the thermistor
as the low-cost alternative with wider resistance tolerance over temperature and larger resistance drift
over time.
2
Resistance Temperature Detectors (RTDs)
RTDs are considered to be amongst the most accurate temperature sensors available. In addition to high
accuracy, they offer excellent stability, repeatability and have a high immunity to electrical noise.
They are most commonly made using platinum (Pt) because it follows a very linear resistance-temperature
relationship in a repeatable manner over a large temperature range.
RTDs can be flat film for low temperature applications or wire wound for higher temperature applications.
Flat film detectors are manufactured by placing a fine layer of platinum wire onto a ceramic substrate. The
element is then coated in epoxy or glass, which provides protection. They are a cheaper alternative to wire
wound detectors and have a fast response time, however, they offer less stability and have a lower
temperature range than their wire wound counterparts.
Wire wound detectors consist of a length of fine coiled platinum wire wrapped around a ceramic or glass
core. They are relatively fragile and are often supplied with a sheath for protection. They have greater
accuracy over a wider temperature range than flat film detectors, however, they are more expensive.
DIN/IEC 60751 is considered the worldwide standard for platinum RTDs. For a PT100 RTD, for example,
the standard requires the sensing element to have an electrical resistance of 100.00 Ω at 0°C and a
temperature coefficient of resistance (TCR) of 0.00385 Ω/Ω/°C between 0°C and 100°C.
The resistance-to-temperature relation is defined for temperature ranges above and below 0°C via:
RT = R0 [(1 + AT ) + BT 2 ]
for T ³ 0°C
2
3
RT = R0 [(1 + AT ) + BT + CT (100 - T )] for T < 0°C
with : A = 3.9083·10-3 , B = - 5.775·10-7 , = C = - 4.183·10-12
(1)
140
Resistance - Ω
135
130
125
120
115
110
105
100
0
10
20
30
40
50
60
70
80
90
100
Temperature - o C
Figure 1. Resistance – Temperature Curve for PT100
For the small temperature range from 0°C to 100°C, the resistance temperature curve is almost linear.
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Resistance Temperature Detectors (RTDs)
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There are four tolerance classes specified in DIN/IEC751 and two more tolerance classes used in the
industry that have not been standardized yet:
Class
Tolerance °C
Class AA =
± (0.1 + 0.0017·|T|)
Class A =
± (0.15 + 0.002·|T|)
Class B =
± (0.3 + 0.005·|T|)
Class C =
± (1.2 + 0.005·|T|)
1/3 Class B
± 1/3 (0.3 + 0.005·|T|)
1/10 Class B
± 1/10 (0.3 + 0.005·|T|)
Accuracy - o C
4.5
4.0
Class AA
3.5
Class A
3.0
Class B
2.5
Class C
2.0
1.5
1.0
0.5
0.0
-200 -100
0
100
200
300
400
500
600
Temperature - o C
Figure 2. Accuracy Classes for RTDs
These tolerance classes also represent a detector’s interchangeability. Should a detector become
damaged good interchangeability assures that the replacement sensor delivers the same readings under
the same conditions as its predecessor.
Another important criterion for selecting a temperature sensor is its long term stability. Great stability
produces little output signal drift over time, thus reducing the frequency of costly calibrations. Depending
on the application requirement, today’s RTDs can provide long-term drifts from as little as 0.003°C/year up
to 0.01 and 0.05°C/year.
Often times RTDs are considered the most precise elements amongst temperature sensors. In order to
convert an RTD’s change in resistance into a sensible output signal, a current source is commonly used
that drives a constant current through the sensing element, thus creating a temperature dependent voltage
across the RTD.
This method bares two sources for measurement errors.
First the current through the RTD causes a certain amount of self heat that adds to the sensing elements
temperature, thus falsifying the actual measurement reading. Therefore, in order to minimize the impact of
self heating, currents in the range of 500 μA to 1 mA maximum are recommended.
The second error source is the voltage drop across long measurement leads particularly in PT100
applications. Here voltage divider action between lead resistance and RTD can significantly reduce the
measured output voltage at the signal amplifier input, yielding a false temperature reading. To minimize
the impact of lead resistance the leads must either be short when using a 2-wire RTD, or the RTD itself
must accommodate lead-compensation wires, as provided in 3-wire and 4-wire RTD designs.
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Thermistors (NTCs)
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Thermistors (NTCs)
Thermistors are made from mixtures of powdered metal oxides; recipes are closely guarded secrets of the
various thermistor manufacturers. The powdered metal oxides are thoroughly mixed and formed into the
shape needed for the thermistor's manufacturing process. The formed metal oxides are heated until the
metal oxides melt and turn into a ceramic. Most thermistors are made from thin sheets of ceramic cut into
individual sensors. The thermistors are finished by putting leads on them and dipped into epoxy or
encapsulated in glass. The most prevalent types of thermistors are glass bead, disc, and chip
configurations.
NTC thermistors exhibit a decrease in electrical resistance with increasing temperature. Depending on the
materials and methods of fabrication, they are generally used in the temperature range of -50°C to 150°C,
and up to 300°C for some glass-encapsulated units. The resistance value of a thermistor is typically
referenced at 25°C (abbreviated as R25). For most applications, the R25 values are between 100 Ω and
100 kΩ.
The resistance vs. temperature (R/T) characteristic of the NTC thermistor is a nonlinear, negative
exponential function. Several interpolation equations are available that accurately describe the R/T curve.
The best known is the Steinhart-Hart equation:
3
1 T = A + B × ln R + C × (ln R )
(2)
Coefficients A, B, and C are derived by calibrating at three temperature points and then solving the three
simultaneous equations. The uncertainty associated with the use of the Steinhart-Hart equation is less
than ± 0.005°C for 50°C temperature spans within the 0°C-260°C range, so using the appropriate
interpolation equation or lookup table in conjunction with a microprocessor can eliminate the potential nonlinearity problem.
The NTC thermistor's relatively large change in resistance vs. temperature, typically on the order of 3%/°C to -6%/°C, provides an order of magnitude greater signal response than RTDs.
1000
Thermistors
R25 = 100 Ω
R25 = 1 kΩ
R25 = 10 kΩ
Resistance – Ω
800
Platinum RTD
R0 = 100 Ω
600
400
200
0
0
50
100
150
o
Temperature – C
Figure 3. R-T Curve Comparison Between Thermistors and RTD
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0.50
0.45
0.40
Accuracy - oC
0.35
0.30
0.25
0.20
0.15
Class AA
0.10
Class A
0.05
Std -Therm
HP -Therm
0.00
-60
-40
-20
0
20
40
60
80
100
120
140
160
Temperature - oC
Figure 4. Accuracy Comparison Between Precision RTDs and Standard and Precision Thermistors
Another important feature of the NTC thermistor is the high degree of interchangeability that can be
offered at a relatively low cost. Interchangeability describes the degree of accuracy or tolerance to which a
thermistor is specified and produced, and is normally expressed as a temperature tolerance over a
temperature range. For example, disc and chip thermistors are commonly specified to tolerances of
±0.1°C and ±0.2°C over the temperature ranges of 0°C to 70°C and 0°C to 100°C. Interchangeability
helps the systems manufacturer to reduce labor costs by not having to calibrate each instrument/system
with each thermistor during fabrication or use in the field.
The small dimensions of thermistors make for a very rapid response to temperature changes. This feature
is particularly useful for temperature monitoring and control systems requiring quick feedback.
As a result of improvements in technology, NTC thermistors are better able to handle mechanical and
thermal shock and vibration than other temperature sensors.
A thermistor's R/T characteristic and R25 value are determined by the particular formulation of oxides.
Over the past 10 years, better raw materials and advances in ceramics processing technology have
contributed to overall improvements in the reliability, interchangeability, and cost-effectiveness of
thermistors.
4
Semiconductor Temperature Sensors
Semiconductor temperature sensors, such as the LMT70, are manufactured using semiconductor
technology which allows these devices to be produced efficiently and inexpensively and to have properties
designed to easily interface with many other types of semiconductor devices, such as amplifiers, power
regulators, buffer output amplifiers and microcontrollers for signal conditioning, monitoring, and display
purposes.
These sensors offer high accuracy and high linearity over an operating range of about –55°C to +150°C.
Semiconductor temperature sensors make use of the temperature dependent relationship between a
bipolar junction transistor's (BJT) base-emitter voltage and its collector current:
VBE =
æI ö
kT
× ln ç C ÷
q
è IS ø
(3)
where, k is Boltzmann's constant, T is the absolute temperature, q is the charge of an electron, and IS is a
current related to the geometry and the temperature of the transistor.
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The LMT70
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Because of the non-linear temperature dependency of IS, many sensor designs use proportional-toabsolute-temperature (PTAT) circuits to eliminate the temperature impact of IC and IS all together. Figure 5
shows the simplified principle. Here the difference between the base-emitter voltage of a single transistor
and the base-emitter voltage of n in parallel connected transistors is used as a linear, temperature
dependent output. This principle is applied in the so-called Brokaw cell that can be either used to create a
temperature independent bandgap voltage, or a PTAT sensor circuit (see Figure 6).
One Transistor
n Transistors
IC
IC
Qn
Q1
VBE
VBE =
VN
kT
q
ln
IC
VN =
IS
∆VBE = VBE −VN = T ⋅
kT
q
ln
IC
n ⋅ IS
k ⋅ ln( n)
q
Figure 5. Principle of Eliminating IC and IS
VIN
R
R
I2 = I 1
VBandgap
Q1
Qn
Vn
ΔVBE
VBE
R2
VPTAT
R1
VPTAT = T .
k ln( n)
q
. 2R 1
R2
Figure 6. VPTAT Temperature Sensor
The voltage, ΔVBE = VBE - VN, appears across resistor R2. Therefore, the emitter current in Q2 is ΔVBE/R2.
The op amp's servo loop and the resistors, R, force the same current to flow through Q1. The Q1 and Q2
currents are equal and are summed and flow into resistor R1. The corresponding voltage developed
across R1 is proportional to absolute temperature (PTAT).
The bandgap cell reference voltage, VBandgap, appears at the base of Q1 and is the sum of VBE(Q1) and VPTAT.
VBE(Q1) is complementary to absolute temperature (CTAT), and summing it with VPTAT causes VBandgap to be
constant over temperature. This circuit is the basic band-gap temperature sensor, which has been widely
used in semiconductor temperature sensors.
5
The LMT70
However, recent advances in process technology and test methodology made it possible to produce
modern semiconductor temperature sensors, such as the LMT70. This device utilizes a much smaller
design structure while providing superior accuracy of less than ± 0.15°C at 25°C. Also its tiny 0.9 mm x
0.9 mm package allows for the use in small sensor probes. All of these advantages come at a fraction of
the cost of competing devices.
The sensing element of the LMT70 consists of stacked BJT base emitter junctions that are biased by a
current source. The output of the sensing element is buffered by a precision amplifier whose class AB
push-pull output stage can easily source and sink currents of up to 3 mA.
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The amplifier output connects to an output switch that is turned on and off by the digital control input
T_ON (see Figure 7). This switch allows for the multiplexing of multiple sensors on one signal line.
VDD
T_ON
TAO
LMT70
GND
Figure 7. Simplified Block Diagram
The most simple sensor interface is shown in the left diagram of Figure 8. For a regulated, low-noise
supply in combination with a light load, such as an analog-to-digital converter (ADC) with internal input
buffer, it is possible to use the LMT70 without additional external components.
3.3 V
VDD T_ON
LMT70
TAO
ADC
CB
100 nF
3.3 V
VDD T_ON
LMT70
RF
TAO
3 kΩ
GND
GND
CF
10 nF
ADC
Figure 8. Circuit Examples for Noise-Free and Noisy Environments
For a noisy supply and ADCs without internal buffer, a supply bypass capacitor of CB = 100 nF is
recommended. This capacitor filters supply noise and also provides sufficient supply current during ADC
switching cycles.
In very noisy environment, an additional R-C low-pass filter can be implemented. While the LMT70 is
capable of driving heavy capacitive loads of up to 1nF without a series resistor, larger capacitance do
require a decoupling series resistor to maintain internal loop stability of the device.
Typically the R-C time constant of the external filter is significantly larger than the ADC internal time
constant made up by the multiplexer input resistance (~ 5kΩ) and sampling capacitance (~ 10 pF). This
affects ADC sampling frequency. The time required to charge the sampling capacitor to n-bit accuracy is
half the period of the sampling frequency (assuming a 50% duty cycle) and is given by using Equation 4:
æ 1 ö
t = t × ln çç
÷÷
è 2n ø
(4)
where, τ is the external filter’s time constant, and n is the ADC resolution in bits. Some data converters are
limited in their range of sampling frequency and specify the maximum external resistance to maintain
accuracy. Check the device-specific ADC data sheet for this information as it will impact the external filter
component values.
6
Accuracy and Calibration
The LMT70 is trimmed and calibrated during production. Its accuracy over the temperature range from 50°C to 140°C is better than 0.3°C, thus challenging even class AA RTDs. These are, however, the
minimum and maximum accuracy limits that narrow down further to less than 0.15°C at 25°C. Actual
characterized components lie within an even narrower band of ± 0.15°C across the entire temperature
range.
For easy implementation of a controller look-up table, the LMT70, LMT70A ±0.1°C Precision Analog
Temperature Sensor, RTD and Precision NTC Thermistor IC Data Sheet (SNIS187) lists the minimum,
typical, and maximum sensor output voltages in single degree steps for the entire temperature range. This
data sheet also provides suggestions on how and when to apply linear, quadratic or cubic polynomials to
achieve the rated accuracies.
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Accuracy and Calibration
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0.60
0.50
0.40
Max Limit
Accuracy (°C)
0.30
0.20
0.10
0.00
–0.10
–0.20
–0.30
Min Limit
–0.40
–0.50
–0.60
–60 –40 –20
0
20
40
60
80
100 120 140 160
DUT Temperature (°C)
Figure 9. LMT70 Accuracy Over Temperature
For higher accuracies, it is possible to apply further calibration. The following example assumes a sensor
whose output voltage-over-temperature characteristic crosses the typical characteristic taken from the
look-up table in the LMT70, LMT70A ±0.1°C Precision Analog Temperature Sensor, RTD and Precision
NTC Thermistor IC Data Sheet (SNIS187) (see Figure 10).
The most commonly applied and inexpensive calibration techniques are single-point and dual-point
calibrations. In the case of a single-point calibration, the user usually has only one reference temperature
available, such as an ice-bath that allows him to compare his sensor against it. This type of calibration
however, only allows for an adjustment of the offset between sensor and reference at 0°C.
V (mV)
T (o C)
VTyp (mV)
VS (mV)
V Max(0)
0
1097.774
1098.611
V Typ(0)
10
1046.647
1047.245
20
995.051
995.461
30
943.227
943.499
40
891.179
891.330
50
838.883
838.883
60
786.360
786.189
70
733.608
733.243
80
680.654
680.065
90
627.490
626.646
100
574.117
572.940
VS
V Min(0)
(T)
VT
yp(
T)
2
VTyp(T) = a ·T + b·T + V Typ(0)
V Max(100)
2
VS(T) = G·a ·T + G·b·T + V S(0)
with G =
ΔVS
VS(100) – VS(0)
=
ΔVTyp
VTyp(100) – VTyp(0)
V Typ(100)
V Min(100)
0
10
20
30
40
50
60
70
80
90
100
T (o C)
Figure 10. Sensor Output Characteristic Versus Typical Characteristic
However, depending on the sensor characteristic, adjusting the offset at cold temperatures can lead to
increased deviation at higher temperatures, which makes single-point calibration questionable (Figure 11,
left diagram).
In order to achieve high accuracy, it is necessary to also adapt the slope of the typical characteristics to
the slope of the sensor, which is known as gain adjustment. Because a slope is defined by two
coordinates in the voltage-temperature diagram, a second reference temperature, such as the boiling point
of water at 100°C is required to determine the second sensor output voltage.
A calibration that applies offset and gain adjustment to a sensor characteristic is known as two-point or
dual-point calibration.
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T)
VTy
=a2
·T
V(
T)
+b
·T
p(T)
+V
Output Voltage
S(0
)
V
Increased
Offset(100)
initial
Offset(100)
S(
T)
0
100
Temperature
=a2
·T
V
S(
T)
+b
·T
+
V
VS
(0)
S(
T)
ΔVS VS(100) – VS(0)
G=
=
ΔVT VT(100) – VT(0)
0
100
Temperature
=
G·
a2
·T
Output Voltage
V(
Output Voltage
ΔVS
ΔVT
Offset(0)
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+
G·
b
·T
+
V
S(
0)
0
Temperature
100
Figure 11. Two-Point Calibration Requires Offset Adjustment (left),
Gain Adjustment (middle) to Yield the Final Transfer Function (right)
In this example, the LMT70’s typical output characteristic in the LMT70, LMT70A ±0.1°C Precision Analog
Temperature Sensor, RTD and Precision NTC Thermistor IC Data Sheet (SNIS187) (see Figure 10) is
approximated by the least-square fitting method, here using a second order polynomial of the form:
VTyp(T ) = a × T 2 + b × T + c
(5)
Then, the output voltages of the actual sensor are measured at 0°C and 100°C.
For a first offset adjustment, VS(0) is used to replace c in Equation 5.
V(T ) = a × T 2 + b × T + VS(0)
(6)
Then, the ratio of the actual sensor slope to the typical sensor slope, also known as Gain, is computed
using Equation 7:
G=
DVS VS(100) - VS(0)
=
DVT VT (100) - VT (0)
(7)
The a and b coefficients are then multiplied with G to yield Equation 8:
VS(T ) = G × a × T 2 + G × b × T + VS(0)
(8)
To determine the sensor accuracy, Equation 8 is solved for temperature and calculated for each of the
sensor output voltages, VS, listed in Figure 10.
T(V ) =
S
-b - b 2 - 4 a (VS(0) - VS(T ) )
(9)
2a
The differences between the calculated and actual temperatures are the sensor accuracies in Figure 12.
0.004
0.035
0.030
Accuracy – oC
0.025
Offset & Gain adjustment (initial)
0.020
Offset & Gain adjustment (fine tuned)
0.015
0.010
0.005
± 0.01oC
0.000
-0.005
-0.010
0
10
20
30
40
50
60
70
80
90
100
Temperature – oC
Figure 12. Sensor Accuracy After Initial 2-Point Calibration and Further Fine-Tuning
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4-to-20 mA Temperature Transmitters
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Figure 12 shows best accuracy at 0°C. This is due to the offset compensation at this temperature. By
lowering the initial offset the curve can be adjusted symmetrically around zero. Because of the lower
resolution of a second order polynomial across a wide temperature range, the application of additional
finer gain adjustment will have an impact on accuracy by yielding levels of up to ± 0.01°C across the entire
temperature range.
7
4-to-20 mA Temperature Transmitters
In building automation the distance between a sensor and its control processor unit can reach up to
several hundreds of yards. The most reliable method of transmitting sensor data across noisy environment
is the 4-to-20 mA current loop due to its high noise immunity. In order to maintain high accuracy during
transmission, high resolution data converters are used. Figure 13 shows the simplified schematic of a high
precision data acquisition system with current-loop output.
V S1
100 nF
DVDD
GPIO1
SCLK
DIN
DOUT
GPIO/IRQ
GPIO2
INT
DVSS
V S1
10 μ 10 n
MSP430
V S1
V S1
100 nF
VDD
T_ON
100 nF
AVDD
100 kΩ
TAO
47 n
LMT70
100 nF
GND
DVDD
AIN0
AIN1
ADS1220
AIN2
AIN3
AVSS
DGND
TPS7A4901
OUT
IN
18 k
FB
GND
10 μ
EN
10 k
24 Vdc
V S1
3 x 100 nF
V S1
100 nF
GND
100 nF
VD VA
C1 C2 C3
CSB
BASE
SCLK
SDO
DAC161S997
SDI
ERRB
OUT
ERRLVL
COMD COMA
CS
SCLK
DOUT
DIN
DRDY
CLK
R RCV
Figure 13. High Precision Temperature Transmitter With 4-to-20 mA Output
For inexpensive sensor transmitters with lower accuracy requirements the circuit in Figure 14 can be
applied. Here the operational amplifier (OPA317) converts the negative slope of the sensor output into a
positive slope and also provides gain and offset adjustment. The 4-20 mA transmitter (XTR117) converts
the sensor output current into the appropriate loop current.
VREG
R1
VDD
V+
Rin
24 Vdc
B
IIN
Q1
VS
R2
GND
VO
IRET
RRCV
COM
R
99 R
RG
R1
E
40 µA
VOH = RL ⋅ 160 µA + VOL
RF
OPA317
LMT70
VOL
RL =
XTR117
RF
T_ON TAO
GND
V-Reg
RG
R2
=
=
V OH – V OL
V SH – V SL
VCC(1 + RF / RG)
VOL + VSH ⋅ RF / RG
−1
IO
Figure 14. Low-Cost Temperature Transmitter With 4-to-20 mA Output
8
References
•
10
LMT70, LMT70A ±0.1°C Precision Analog Temperature Sensor, RTD and Precision NTC Thermistor IC
Data Sheet (SNIS187)
Semiconductor Temperature Sensors Challenge Precision RTDs and
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www.ti.com/computers
DLP® Products
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logic.ti.com
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RFID
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www.ti.com/omap
TI E2E Community
e2e.ti.com
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