Application Note

Application Note
UMTS 1700/IMT/PCS 4 mm x 4 mm
Power Amplifier Modules
Rev 3
Relevant products
• AWT6278
• AWT6279
• AWT6282
General Description
The ANADIGICS 4 mm x 4 mm hetero-junction bipolar
transistor (HBT) power amplifier modules designed
UMTS High Band, and operates from a single lithiumion (Li-ion) battery. The amplifier input and output
are matched to provide optimum performance in a
50 Ω system; only minimal external components are
required for proper RF bypassing.
Table 1: Module Pin Description
piN
NAMe
descRiptioN
Notes
1
VBATT
Battery Voltage
+3.2 to +4.2 V
2
RFIN
RF Input
Use 50  transmission line
3
VMODE1
Mode Control Voltage 1
4
VMODE2
Mode Control Voltage
5
VENABLE PA Enable Voltage
+2.15 to +3.1 V for Low Bias Mode
0 to +0.5 V for High Bias Mode
+2.15 to +3.1 V for PA "on"
0 to +0.5 V for PA "shut down"
RF Output
Use 50  transmission line
VCC
Supply Voltage
+3.2 to +4.2 V
GND
Ground
8
RFOUT
10
6, 7, 9
VBATT
VCC
C5
2.2 µF
C1
0.01µF
1
2
RF IN
VMODE2
VMODE1
VENABLE
C2
0.01µF
VBATT
VCC
RFIN
GND
10
C3
0.01µF
9
3
VMODE2
RFOUT
8
4
VMODE1
GND
7
5
VENABLE
GND
6
GND
at slug
10K 
Optional
pull-down
Figure 1: Application Schematic
02/2010
C4
2.2µF ceramic
RF OUT
UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules
EVALUATION BOARD
The evaluation board, shown in Figure 2, was designed on ROGERS (R04033) material with 8 mils
thickness.
C10
C4
C7
C6
C1
C11
C2
Figure 2: Evaluation Board Layout
Notes:
1. Copper trace width is 20.6 mils.
2. Relative dielectric constant is 3.38 at 1 GHz.
3. Dielectric thickness is 8.0 mils.
Table 2: Evaluation Board Parts List
descRiptioN
vAlue
siZe
MANuFActuReR
MANuFActuReR's
p/N (Qty.)
C1, C2, C3
0.01 F
0603
Panasonic
ECJ-2YB1E103K (3)
2.2 F
0805
Panasonic
ECJ-2YB0J225K (2)
PC Board
-
-
-
4x4PCSEVB (1)
Sma Conn.
-
-
Johnson Comp.
142-0701-851 (2)
Conn. Hdr.
-
-
AMP
4-103321-0
Alum. Block
-
-
-
Edgemountbase1 (1)
C4, C5
(1)
Notes:
(1) Capacitors C4 and C5 must be ceramic type and 2.2 F value only.
2. If any DC signal is present at the input of this amplifier – the blocking capacitor should be used, placed in series to RF
input trace. It is recommended to use a ceramic (0603 10 pF) capacitor.
3. Output Power at antenna port of the phone board should not exceed the power level specified on the data sheet (PA Max.
output power - Front-end loss). All VSWR value at PA output port toward the antenna port should be lower than 8:1 under
28.5 dBm POUT condition, and lower than 5:1 in the absolute maximum RF output power (+31 dBm) condition.
2
Application Note - Rev 3
01/2010
UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules
signal
Generator
dual dc
power supply
spectrum
Analyzer
in
Test Setup Notes:
1. Figure 3 shows minimum equipment required for proper power amplifier operation.
2. Depending upon the power sensor, 10 to 20 dB attenuator is sufficient to prevent
overloading of the power meter or the spectrum analyzer.
Test Equipment
The following test equipment is recommended for testing of WCDMA IMT/PCS evaluation boards.
• One RF WCDMA(1) signal generator capable of delivering at least +5 dBm of output power at the operating
frequency band (Agilent E4432B).
• One RF power meter capable of measuring up to
+30 dBm at the operating frequency band (Agilent
E4419B).
• One RF power sensor capable of measuring RF
power in the range from -50 dBm to +30 dBm at the
operating frequency band (Agilent E9301H).
• One RF spectrum analyzer capable of measuring
ACP in operating frequency band and covering up to
the 3-rd harmonic of the highest frequency in band
(Rohde & Schwarz FSP).
• One DC power supply capable of delivering 1.5 A at
+4 V and 500 mA at +3 V(Agilent 6624A)
• One SMA 10 dB attenuator capable of handling 2
watts.
Notes:
(1) WCDMA: 3GPP 32-03-00, uplink, DPCCH + DPDCH
and HSDPA
Test Setup
1. Set DC power supply to +3.4 V (for VBATT and VCC),
to +2.85 V (for VEN), and to 0 V (for VMODE1,2).
2. Set power meter measured frequency to 1950 MHz
for IMT band (1750 MHz for 1700 band) and its calibration factor to correspond to the set frequency.
3. Set power meter offset value equal to the total loss
of the attenuator, directional coupler, and connecting
cables.
4. Set spectrum analyzer center frequency to 1950
MHz for IMT band (1750 MHz for 1700 band) and enable WCDMA(3GPP) measuring personality.
5. Select and enable WCDMA digital signal on the
signal generator.
6. Set signal generator frequency to 1950 MHz for IMT
band (1750 MHz for 1700 band) and output power to
-10 dBm.
7. Ensure DC power supply is disabled and RF output
of a signal generator is OFF.
8. Connect evaluation board to the test setup as
shown.
9. Turn on DC power supply and measure the idle
current.
10. Switch RF output of a signal generator to ON.
11. Increase amplitude of a signal generator to
the desired output power level (according to the
Application Note - Rev 3
01/2010
3
UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules
corresponding data sheet).
12. Measure and record ACP, Gain (as a difference
between Input and Output power levels) and total
current consumption.
Test sequence (Recommended PA turn-on
and turn-off sequences):
The PA must be enabled before RF input is applied.
Refer to figure below for recommended timing of
the PA enable voltage and RF input drive turn-on/off
sequence.
Turn-on sequence:
1. Refer to Figure 3 for recommended system level
power up/down sequence. Do not turn on DC power
supply before connecting DUT to RF input and output
cables (make sure that RF output of a signal generator
is OFF before connecting RF cables to DUT).
2. Turn on VCC first and then turn on VREF and VMODE.
3. Turn RF output of a signal generator ON and make
measurements.
Turn-off sequence:
1. Turn RF output of a signal generator OFF. Do not
disconnect DUT from RF input and output cables
before turning off DC power supply.
2. Turn off VREF and VMODE, and then VCC.
3. Disconnect DUT from the test setup.
Layout Considerations
A sufficient number of holes (QTY 12 - 0.2 mm
diameter plated through hole) should be placed under
the module in order to channel the heat properly. In
addition, contact should be made between the PA slug
located under the amplifier and the board. For hand
assembly of the board, place sufficient bonding paste
so that contact is made between the PA and ground.
For large volume assembly, please refer to the solder
profile recommendations application note. For RFIN
and RFOUT, provide 50  transmission lines.
Application Information
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
PA shutdown should follow recommended sequence,
(Figure 3). This will avoid a possible “Hot Switch”
condition.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltages. The Bias Control table lists
the recommended modes of operation for various
applications.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 16 dBm. At ~16dBm - 7
dBm, the PA should be “Mode Switched” to Medium
Power Mode. For POUT levels < ~8 dBm, the PA can be
switched to Low Power Mode for even lower quiescent
current consumption.
Output Power/VSWR Mandatory
Output Power at antenna port of the phone board
should not exceed the power level specified on the
data sheet (PA Max. output power - Front-end loss).
All VSWR value at PA output port toward the antenna
port should be lower than 8:1 under 28.5 dBm POUT
condition, and lower than 5:1 in the absolute maximum
RF output power (+31 dBm) condition.
RFIN (RF Input)
Venable (PA Enable Voltage)
15 uS
15 uS
VMODE1
HPM
5 uS
Figure 3: Recommended Turn-On/Off Sequence
4
LPM/MPM
Application Note - Rev 3
01/2010
UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules
Table 5: Bias Control
ApplicAtioN
pout
levels
BiAs
Mode
veNABle
vMode1
vMode2
vcc
vBAtt
WCDMA - low power
(Low Bias Mode)
< +8 dBm
Low
+2.4 V
+2.4 V
+2.4 V
3.2 - 4.2 V
> 3.2 V
WCDMA - med power
(Medium Bias Mode)
7 POUT <
+16 dBm
Low
+2.4 V
+2.4 V
0V
3.2 - 4.2 V
> 3.2 V
WCDMA - high power
(High Bias Mode)
> +16 dBm
High
+2.4 V
0V
0V
3.2 - 4.2 V
> 3.2 V
Optional lower VCC in
low power mode
< +7 dBm
Low
+2.4 V
+2.4 V
2.4 V
1.5 V
> 3.2 V
-
Shutdown
0V
0V
0V
3.2 - 4.2 V
> 3.2 V
Shutdown
Application Note - Rev 3
01/2010
5
UMTS 1700/IMT/PCS 4 mm x 4 mm Power Amplifier Modules
ANADIGICS
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
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Application Note - Rev 3
02/2010