ANADIGICS AWU6618

AWU6618
HELP3ETM Dual-band IMT & EGSM WCDMA
3.4 V Linear Power Amplifier Module
Data Sheet - Rev 2.5
FEATURES
• InGaP HBT Technology
• High Efficiency:
• 38% @ POUT = +28.5 dBm
• 23% @ POUT = +17 dBm
• 9% @ POUT = +8.5 dBm
AW
U
• Low Quiescent Current: 4 mA
661
• Internal Voltage Regulation
TE
• Built-in Directional Coupler
• Common VMODE Control Line
• Simplified VCC Bus PCB routing
• Reduced External Component Count
• Low Profile Surface Mount Package: 1 mm
• RoHS Compliant Package, 260 oC MSL-3
M47 Package
14 Pin 3 mm x 5 mm x 1 mm
Surface Mount Module
LE
APPLICATIONS
O
• IMT & EGSM Dual-band Wireless Handsets and
Data Devices for HSDPA/HSPA networks.
PRODUCT DESCRIPTION
8
O
BS
AWU6618 addresses the demand for increased
integration in dual-band handsets for WCDMA
networks. The small footprint 3 mm x 5 mm x 1
mm surface- mount RoHS compliant package
contains independent RF PA paths to ensure optimal
performance in both frequency bands, while achieving
a 25% PCB space savings compared with solutions
requiring two single-band PAs. The package pinout
was chosen to enable handset manufacturers to easily
route bias to both power amplifiers and simplify control
with common mode pins. The device is manufactured
on an advanced InGaP HBT MMIC technology offering
state-of-the-art reliability, temperature stability, and
ruggedness. The AWU6618 is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
WCDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
the need of an external DC-DC converter. Through
selectable bias modes, the AWU6618 achieves
optimal efficiency, specifically at low- and mid-range
power levels where the PA typically operates, thereby
dramatically increasing handset talk-time. Its built-in
voltage regulator eliminates the need for external
switches. This PA has built-in directional couplers
for each band, with a common coupler output port
CPL_OUT. These couplers provide high directivity and
24 dB Coupling. The 3 mm x 5 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity in
a 50 Ω system.
02/2012
VEN_900 1
14 GND
Bias Control
Voltage Regulation
RFIN_900 2
CPL
VMODE1 3
12 VCC
VBATT 4
11 VCCA
VMODE2 5
10 CPLOUT
RFIN_IMT 6
VEN_IMT 7
13 RFOUT_900
CPL
Bias Control
Voltage Regulation
9 GND
8 RFOUT_IMT
GND at Slug (pad)
Figure 1: Block Diagram
AWU6618
VEN_900
RFIN_900
RFOUT_900
VMODE1
VMODE2
CPLOUT
TE
RFIN_IMT
VEN_IMT
LE
RFOUT_IMT
Figure 2: Pinout
Table 1: Pin Description
1
DESCRIPTION
VEN_900
Enable Voltage for EGSM Band
RFIN_900
RF Input for EGSM Band
BS
2
NAME
O
PIN
VMODE1
Mode Control Voltage for EGSM
and IMT Bands
4
VBATT
Battery Voltage
5
VMODE2
Mode Control Voltage for EGSM
& IMT Band
6
RFIN_IMT
RF Input for IMT Band
7
VEN_IMT
Enable Voltage for IMT Band
8
RFOUT_IMT
9
GND
10
CPLOUT
11
VCCA
12
VCC
13
RFOUT_900
14
GND
O
3
2
RF Output for IMT Band
Ground
Coupler Output Port
Battery Voltage A
Supply Voltage
RF Output for EGSM Band
Ground
Data Sheet - Rev 2.5
02/2012
AWU6618
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VBATT, VCC, VCCA)
0
+5
V
Mode Control Voltage (VMODE1, VMODE2)
0
+3.5
V
Enable Voltage (VEN_CELL, VEN_PCS)
0
+3.5
V
RF Input Power (PIN)
-
+10
dBm
-40
+150
°C
Storage Temperature (TSTG)
TE
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
MIN
TYP
MAX
UNIT
LE
PARAMETER
COMMENTS
880
1920
-
915
1980
MHz
+3.2
+3.4
+4.2
V
+1.35
0
+1.8
-
+3.1
+0.5
V
PA "on"
PA "shut down"
+1.35
0
+1.8
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
RF Output Power, Band 8, UMTS
R99 WCDMA, HPM
HSPA (MPR = 0 dB), HPM
R99 WCDMA, MPM
HSPA (MPR = 0 dB), MPM
R99 WCDMA, LPM
HSPA (MPR = 0 dB), LPM
28.0(1)
27.0(1)
16.5(1)
15.5(1)
8.0(1)
7.0(1)
28.5
27.5
17.0
16.0
8.5
7.5
-
RF Output Power, Band 1, UMTS
R99 WCDMA, HPM
HSPA (MPR = 0 dB), HPM
R99 WCDMA, MPM
HSPA (MPR = 0 dB), MPM
R99 WCDMA, LPM
HSPA (MPR = 0 dB), LPM
27.7(1)
26.7(1)
16.0(1)
15.0(1)
7.5(1)
6.5(1)
28.2
27.2
16.5
15.5
8.0
7.0
-
-30
-
+90
Operating Frequency (f)
Enable Voltage (VEN)
O
Supply Voltage (VCC and VBATT)
O
BS
Mode Control Voltage (VMODE1, VMODE2)
Case Temperature (TC)
dBm
dBm
EGSM (Band 8)
IMT (Band 1)
3GPP TS
34.121-1, REL8
Table C.11.1.3
SUBTEST 1
3GPP TS
34.121-1, REL8
Table C.11.1.3
SUBTEST 1
°C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1)For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
3
Data Sheet - Rev 2.5
02/2012
AWU6618
Table 4: Electrical Specifications - EGSM Band (Band 8)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN_CELL = +1.8 V, 50 Ω system, R99 uplink waveform)
COMMENTS
PARAMETER
MIN
TYP
MAX
UNIT
Gain
25
14.5
9
27.5
17
11
30
19.5
14
dB
+28.5 dBm 0 V
+17 dBm
1.8 V
+8.5 dBm
1.8 V
0V
0V
1.8 V
ACLR1 @ 5 MHz Offset (1)
-
-43
-43
-41
-37
-36
-36
dBc
+28.5 dBm 0 V
+17 dBm
1.8 V
+8.5 dBm
1.8 V
0V
0V
1.8 V
ACLR2 @ 10 MHz Offset (1)
-
-58
-55
-55
-48
-48
-48
dBc
+28.5 dBm 0 V
+17 dBm
1.8 V
+8.5 dBm
1.8 V
0V
0V
1.8 V
Power-Added Efficiency (1)
33
18
6
38
22
9
-
%
+28.5 dBm 0 V
+17 dBm
1.8 V
+8.5 dBm
1.8 V
0V
0V
1.8 V
Mode Control Current
-
Battery Current
-
TE
6.5
mA
through VCC pin,
VMODE1 = +1.8 V, VMODE2 =+1.8 V
0.1
0.2
mA
through VMODE pins, VMODE1= +1.8 V,
VMODE2 = +1.8 V
1.5
2.5
mA
through VBATT pin, VMODE1 = +1.8 V,
VMODE2 = +1.8 V
-
0.15
0.25
mA
through VEN_900 pin
-
-134
-132
Harmonics
2fo
3fo, 4fo
-
-42
-50
-30
-38
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
23.4
-
dB
O
Noise in Receive Band
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
dBm/Hz 925 MHz to 960 MHz
POUT < +28.5 dBm
-
-
-65
dBc
POUT < +28.5 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating conditions
Notes:
(1) Efficiency and ACLR measured at 897.5 MHz.
4
VMODE2
4
BS
Enable Current
VMODE1
LE
-
O
Quiescent Current (Icq)
POUT
Data Sheet - Rev 2.5
02/2012
AWU6618
Table 5: Electrical Specifications - IMT Band (Band 1)
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN_PCS = +1.8 V, 50 Ω system) (R99 uplink waveform)
TYP
MAX
UNIT
24
12
8
17
14.5
10
29.5
17
13
dB
+28.2 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
ACLR1 @ 5 MHz Offset
-
-42
-43
-44
-37
-36
-36
dBc
+28.2 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
ACLR2 @ 10 MHz Offset
-
-55
-56
-55
-48
-48
-48
dBc
+28.2 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Power-Added Efficiency (1)
33
21
6
37
24
9
-
+28.2 dBm
+16.5 dBm
+8 dBm
0V
1.8 V
1.8 V
0V
0V
1.8 V
Quiescent Current (Icq)
-
4
6.5
Mode Control Current
-
Battery Current
-
VMODE1
VMODE2
TE
POUT
%
mA
through VCC pin,
VMODE1 = +1.8 V, VMODE2 =+1.8 V
LE
Gain
0.1
0.2
mA
through VMODE pins, VMODE1= +1.8 V
VMODE2 = +1.8 V
1.4
2.5
mA
through VBATT pin, VMODE1 = +1.8 V,
VMODE2 = +1.8 V
-
0.15
0.25
mA
through VEN_IMT pin
-
<1
5
µA
VBATT = +4.2 V, VCC = +4.2 V,
VEN = 0 V, VMODE1 = 0 V, VMODE2 = 0 V
Total Decoder Current on
VBATT (Shutdown Mode)
-
12
22
µA
VBATT = 4.2 V, VCC = 4.2 V,
VEN = 0 V, VMODE1 = VMODE2 = 0 V
Noise in Receive Band
-
-136
-134
dBm/Hz
Harmonics
2fo
3fo, 4fo
-
-42
-50
-30
-38
dBc
Input Impedance
-
-
2:1
VSWR
Coupling Factor
-
22.5
-
dB
Enable Current
O
BS
HBT Leakage Current on VCC
(Shutdown mode)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or
failure
2110 MHz to 2170 MHz
POUT < +28.2 dBm
-
-
-65
dBc
POUT < +28.2 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating conditions
8:1
-
-
VSWR
Applies over full operating conditions
Notes:
(1) ACPRs and Efficiency measured at 1950 MHz.
5
COMMENTS
MIN
O
PARAMETER
Data Sheet - Rev 2.5
02/2012
AWU6618
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VENABLE and VMODE voltages.
Bias Modes, Medium Bias Mode
The power amplifier may be placed in Low Bias mode
or a High Bias mode by applying the appropriate
logic level (see Operating Ranges table) to the
VMODE1, and VMODE2 pins. The Bias Control table lists
the recommended modes of operation for various
applications.
Vcontrols
Venable/Vmode(s)
TE
On Sequence Start
T_0N = 0µ
Rise/Fall Max 1µS
Defined at 10% to 90%
of Min/Max Voltage
Off Sequence Start
T_0FF = 0µ
OFF Sequence
LE
ON Sequence
RFIN_900, IMT
O
notes 1,2
VEN_900, IMT
BS
VCC, VCCA
note 1
T_0N+1µS
T_0N+3µS
T_0FF+2µS T_0FF+3µS
Referenced After 90% of Rise
Time
Referenced Before10% of Fall
Time
Figure 3: Recommended ON/OFF Timing Sequence
O
Notes:
(1) Level might be changed after RF is ON.
(2) RF OFF defined as PIN ≤ -30 dBm.
(3) Switching simultaneously between VMODE and VEN is not recommended
Table 6: Bias Control
POUT
LEVELS
BIAS
MODE
VEN
VMODE1
VMODE2
VCC
VBATT
WCDMA - low power
(Low Bias Mode)
< +8.5 dBm
Low
+1.8 V
+1.8
+1.8 V
3.2 - 4.2 V
> 3.2 V
WCDMA - med power
(Medium Bias Mode)
> 8 dBm
< +17 dBm
Low
+1.8 V
+1.8 V
0V
3.2 - 4.2 V
> 3.2 V
WCDMA - high power
(High Bias Mode)
> +16 dBm
High
+1.8 V
0V
0V
3.2 - 4.2 V
> 3.2 V
-
Shutdown
0V
0V
0V
3.2 - 4.2 V
> 3.2 V
APPLICATION
Shutdown
6
Data Sheet - Rev 2.5
02/2012
AWU6618
VEN_900
1
14
Bias Control
Voltage Regulation
RFIN_900
CPL
2
13
68 pF
12
3
VMODE1
RFOUT_900
VCC
1000 pF
2.2 F
68pF
4
11
TE
VBATT
68 pF
5
RFIN_IMT
6
7
VEN_IMT
10
CPL
Bias Control
Voltage Regulation
O
GND at Slug (pad)
O
BS
Figure 4: Application Circuit
7
Data Sheet - Rev 2.5
02/2012
CPLOUT
9
LE
VMODE2
2.2 F
8
33 pF
RFOUT_IMT
AWU6618
BS
O
LE
TE
PACKAGE OUTLINE
O
Figure 7: Package Outline - 14 Pin 3 mm x 5 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code
YY= Year WW= Work Week
6618R
LLLLNN
CC
YYWW
Figure 8: Branding Specification
8
Data Sheet - Rev 2.5
02/2012
Part Number
Lot Number
Country Code
AWU6618
LE
TE
COMPONENT PACKAGING
O
BS
O
Figure 5: Carrier Tape
Figure 6: Reel
9
Data Sheet - Rev 2.5
02/2012
AWU6618
ORDERING INFORMATION
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AWU6618RM47Q7
-30 °C to +90 °C
RoHS Compliant 14 Pin
3 mm x 5 mm x 1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
AWU6618RM47P9
-30 °C to +90 °C
RoHS Compliant 14 Pin
3 mm x 5 mm x 1 mm
Surface Mount Module
Partial Tape and Reel
ANADIGICS
BS
O
LE
TE
ORDER NUMBER
O
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
10
Data Sheet - Rev 2.5
02/2012