CZT953 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 is a silicon high current PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO ICER IEBO BVCBO BVCER BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE hFE fT Cob SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA CHARACTERISTICS: (TA=25°C unless TEST CONDITIONS VCB=100V VCB=100V, TA=100°C VCE=100V, RBE≤1.0kΩ VEB=6.0V IC=100μA IC=10mA, RBE≤1.0kΩ IC=1.0mA (Note 2) IE=100μA IC=100mA, IB=10mA IC=1.0A, IB=100mA IC=2.0A, IB=200mA IC=4.0A, IB=400mA IC=4.0A, IB=400mA VCE=1.0V, IC=10mA VCE=1.0V, IC=1.0A VCE=1.0V, IC=3.0A VCE=1.0V, IC=4.0A VCE=1.0V, IC=10A VCE=10V, IC=100mA, f=50MHz VCB=10V, IE=0, f=1.0MHz 140 100 6.0 5.0 3.0 -65 to +150 41.7 otherwise noted) MIN TYP 140 140 100 6.0 100 100 50 30 170 150 120 9.0 20 90 170 320 1.0 200 70 45 15 150 45 MAX 50 1.0 50 10 140 50 120 220 420 1.2 UNITS V V V A W °C °C/W UNITS nA μA nA nA V V V V mV mV mV mV V 300 MHz pF Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum) (2) Pulse Test: Pulse Width = 100μs R5 (11-June 2013) CZT953 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE 4 1 2 3 LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R5 (11-June 2013) w w w. c e n t r a l s e m i . c o m CZT953 SURFACE MOUNT SILICON HIGH CURRENT PNP TRANSISTOR TYPICAL ELECTRICAL CHARACTERISTICS R5 (11-June 2013) w w w. c e n t r a l s e m i . c o m