HAF1010RJ Silicon P Channel MOS FET Series Power Switching REJ03G0573-0100 Rev.1.00 Mar.03.2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • • • • • Logic level operation to (–4 to –6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) High density mounting Outline PRSP0008DD-A (Package name: SOP-8<FP-8DA>) 4 G 5 D 6 D 7 D 8 Gate resistor Temperature Sensing Circuit Latch Circuit 8 D Gate Shut-down Circuit 5 7 6 3 1 2 S 1 S 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS –60 Gate to source voltage VGSS –16 Gate to source voltage VGSS 2.5 Drain current ID –5 Drain peak current ID (pulse) Note1 –10 Body-drain diode reverse drain current IDR –5 Note2 Cannel dissipation Pch 2.5 Cannel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Rev.1.00, Mar.03.2005, page 1 of 6 Unit V V V A A A W °C °C HAF1010RJ Typical Operation Characteristics (Ta = 25°C) Item Symbol VIH VIL IIH1 IIH2 Input voltage Input current (Gate non shut down) IIL IIH(sd)1 Input current (Gate shut down) IIH(sd)2 Tsd Vop Shut down temperature Gate operation voltage Min –3.5 — — — — — — — –3.5 Typ — — — — — –0.8 –0.35 175 — Max — –1.2 –100 –50 –1 — — — –12 Unit V V µA µA µA mA mA °C V Test Conditions Vi = –8V, VDS =0 Vi = –3.5V, VDS =0 Vi = –1.2V, VDS =0 Vi = –8V, VDS =0 Vi = –3.5V, VDS =0 Cannel temperature Electrical Characteristics (Ta = 25°C) Item Output capacitance RDS(on) Coss Min –1.5 — –60 –16 2.5 — — — — — — — –1.1 2 — — — Typ — — — — — — — — — –0.8 –0.35 — — 4 200 140 326 Max — –10 — — — –100 –50 –1 100 — — –10 –2.25 — 340 200 ― Unit A mA V V V µA µA µA µA mA mA µA V S mΩ mΩ pF Turn-on delay time Rise time Turn off delay time Fall time Body-drain diode forward voltage td(on) tr td(off) tf VDF — — — — — 2 7.6 3.2 3.2 –0.9 ― — ― — — µs µs µs µs V VGS = –5 V, ID= –2.5 A, RL = 12 Ω Body-drain diode reverse recovery time trr — 77 — ns Over lord shut down note4 operation time tos1 — — 4.4 2 — — ms ms IF = –5 A, VGS = 0 diF/dt = 50 A/µs VGS = –5 V, VDD = –16 V VGS = –5 V, VDD = –24 V Drain current Drain current Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cut off voltage Forward transfer admittance Static drain to source on state resistance Symbol ID1 ID2 V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 IDSS VGS(off) |yfs| RDS(on) tos2 Notes: 3. Pulse test 4. Including the junction temperature rise of the lorded condition Rev.1.00, Mar.03.2005, page 2 of 6 Test Conditions VGS = –3.5 V, VDS = –2 V VGS = –1.2 V, VDS = –2 V ID = –10 mA, VGS = 0 IG = –800 µA, VDS = 0 IG = 100 µA, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VGS = –1.2 V, VDS = 0 VGS = 2.4 V, VDS = 0 VGS = –8 V, VDS = 0 VGS = –3.5 V, VDS = 0 VDS = –60 V, VGS = 0 VDS = –10 V, ID = –1 mA ID =–2.5 A, VDS =–10 Vnote3 ID = –2.5 A, VGS = –4 Vnote3 ID = –2.5 A, VGS = –10 Vnote3 VDS = –10 V, VGS = 0, f = 1 MHz IF = –5 A, VGS = 0 HAF1010RJ Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area -100 Test condition. When using the glass epoxy board. 3 (FR4 40 x 40 x 1.6 mm), (PW ≤ 10s) Ta = 25°C Thermal shut down 10 operation area 0 (A) -30 2 1 -3 PW -1 DC -0.3 50 100 150 1m s =1 0m s Op er ati Operation -0.01 in this area is limited by RDS(on) 0 µs -10 Drain Current ID Channel Dissipation Pch (W) 4 on (P W No ≤1 te 0s 5 ) -0.03 200 -0.3 -0.5 -1 -2 -5 -10 -20 -50 -100 Drain Source Voltage VDS (V) Case Temperature Tc (°C) Note 5: When using the glass epoxy board. ( FR4 40 x 40 x 1.6 mm) Typical Transfer Characteristics Typical Output Characteristics –10 V –8 V –5 –6 V –8 Drain Current ID (A) Drain Current ID (A) –10 –4 V –6 VGS = –3.5 V –4 –2 V DS = –10 V –25°C Pulse Test 25°C Tc = 75°C –4 –3 –2 Tc = 75°C –1 25°C –25°C Pulse Test Rev.1.00, 0 Drain to Saturation Voltage vs. Gate to Source Voltage –2.0 Pulse Test –1.6 –1.2 I D = –5 A –0.8 –2.5 A –0.4 –1 A 0 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Mar.03.2005, page 3 of 6 RDS(on) (mΩ) –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) Drain Source On Sate Resistance Drain to Source Saturation Voltage VDS(on) (V) 0 –1 –2 –3 –4 –5 Gate to Source Voltage VGS (V) Static Drain to Source State Resistance vs. Drain Current 1000 Pulse Test 500 V GS = –4 V 200 100 –10 V 50 20 10 –0.1 –0.2 –0.5 –1 –2 Drain Current ID (A) –5 –10 RDS(on) (mΩ) Drain Source On State Resistance Drain to Source On State Resistance vs. Temperature 500 Pulse Test 400 ID = –5 A –2.5 A 300 VGS = –4 V –1 A 200 –5 A –2.5 A 100 0 –25 –1 A VGS = –10 V 0 25 50 75 100 Forward Transfer Admittance |yfs| (S) HAF1010RJ 10 Forward Transfer Admittance vs. Drain Current VDS = –10 V 5 Pulse Test 2 1 25°C 0.5 75°C 0.2 0.1 0.05 0.02 0.01 –0.01 125 –0.1 Body to Drain Diode Reverse Recovery Time Switching Characteristics Switching Time t (µs) Reverse Recovery Time trr (ns) 50 500 200 100 50 di / dt = 50 A / µs VGS = 0, Ta = 25°C 20 20 t 10 d(off) 5 2 td(on) 1 0.5 VGS = –10 V, VDD = –30 V PW = 300 µs, duty < 1 % 0.1 –0.1 –0.2 –0.5 –1 –2 Reverse Drain Current –5 –10 –0.1 –0.2 IDR (A) –0.5 –1 Drain Current –2 –5 –10 ID (A) Typical capacitance vs. Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 10000 –5 VGS = 0 f = 1 MHz Pulse Test -10 V Capacitance C (pF) Reverse Drain Current IDR (A) tr tf 0.2 10 –3 –2 -5 V VGS = 0 V –1 1000 Coss 100 –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage VSD (V) Rev.1.00, –10 100 1000 0 –1 Drain Current ID (A) Case Temperature Tc (°C) –4 Tc = –25°C Mar.03.2005, page 4 of 6 –2.0 0 –10 –20 –30 –40 –50 Drain to Source VDS (V) –60 HAF1010RJ Shutdown Case Temperature vs. Gate to Source Voltage Gate to Source Voltage vs. Shutdown Time of Load-Short Test Gate to Source Voltage VGS (V) Shutdown Case Temperature Tc (°C) -15 -10 VDD = -16 V -24 V -5 0 0.0001 0.001 0.01 0.1 200 180 160 140 120 100 0 –6 –8 –10 D=1 0.5 0.2 0.1 0.1 0.05 θch − f(t) = γs (t) • θch − f θch − f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 × 40 × 1.6 mm) 0.02 0.01 0.01 PDM e 0.001 ot 1sh 0.0001 10 µ ls pu Mar.03.2005, D= PW T PW T 100 µ 1m 10 m 100 m 1 Pulse Width PW (S) Rev.1.00, –4 Normalized Transient Thermal Impedance vs. Pulse Width 10 Normalized Transient Thermal Impedance γs (t) –2 Gate to Source Voltage VGS (V) Shutdown Time of Lord-Short Test Pw (S) 1 ID = –0.5 A page 5 of 6 10 100 1000 10000 HAF1010RJ Package Dimensions JEITA Package Code RENESAS Code Package Name P-SOP8-3.95 × 4.9-1.27 PRSP0008DD-A FP-8DA MASS[Typ.] F 0.085g *1 D bp b1 1 Z c1 c *2 E Index mark HE 5 8 4 *3 Terminal cross section bp NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. x M e Reference Symbol L1 Dimension in Millimeters Min Nom Max D 4.90 5.3 E 3.95 A2 A1 0.10 0.14 0.25 0.34 0.42 0.50 1.75 A A A1 bp L 0.40 b1 c 0.19 c1 y 0.22 0° Detail F HE 5.80 e 8° 6.10 0.25 y 0.1 Z 0.75 L 0.40 L1 Ordering Information Quantity 2500 pcs/ Reel Shipping Container Embossed tape (Reel) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Mar.03.2005, page 6 of 6 6.20 1.27 x Part Name HAF1010RJ 0.25 0.20 0.60 1.08 1.27 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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