HAT2200R Silicon N Channel Power MOS FET Power Switching REJ03G0232-0200Z Rev.2.00 Apr.05.2004 Features • • • • Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 5 6 7 8 D D D D 4 G 3 1 2 4 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Rev.2.00, Apr.05.2004, page 1 of 7 5 7 6 HAT2200R Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Ambient Thermal Impedance Channel temperature Storage temperature VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 θch-a Note3 Tch Tstg 100 ±20 8 64 8 8 6.4 2.5 50 150 –55 to +150 V V A A A A mJ W °C/W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr 100 — — 3.5 — — 8 — — — — — — — — — — — — — — — — — 22 23 14 2300 280 90 1.3 32 12 8 16 4 32 4.5 0.79 45 — ± 0.1 1 5.0 28 33 — — — — — — — — — — — — 1.03 — V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 4 A, VGS = 10 V Note4 ID = 4 A, VGS = 8 V Note4 ID = 4 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz Notes: 4. Pulse test Rev.2.00, Apr.05.2004, page 2 of 7 VDD = 50 V VGS = 10 V ID = 8 A VGS = 10 V, ID = 4 A VDD ≅ 30 V RL = 7.5 Ω Rg = 4.7 Ω IF = 8 A, VGS = 0 Note4 IF = 8 A, VGS = 0 diF/ dt = 100 A/ µs HAT2200R Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 Pch (W) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 2.0 1.0 0 10 µs 10 100 µs 1 Drain Current Channel Dissipation 3.0 ID (A) 4.0 Operation in this area is 0.1 limited by RDS(on) 50 100 150 200 Ta (°C) Ta = 25°C 0.001 1 shot Pulse 0.1 0.3 1 3 10 30 100 300 1000 Drain to Source Voltage VDS (V) Note 5 : When using the glass epoxy board (FR4 40x40x1.6 mm) Typical Transfer Characteristics Typical Output Characteristics 20 20 5.8 V VDS = 10 V Pulse Test 16 ID (A) 6V 12 5.6 V 8 VGS = 5.4 V 4 Drain Current Drain Current ID (A) 10 V 16 PW = 10 ms DC Operation (PW £ 10 s)Note 5 0.01 Ambient Temperature 1 ms 12 Tc = 75°C 8 25°C 4 –25°C Pulse Test 2 4 6 Drain to Source Voltage VDS(on) (mV) Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 150 Pulse Test 200 ID = 5 A 100 2A 50 1A 0 5 10 15 20 Gate to Source Voltage VGS (V) Rev.2.00, Apr.05.2004, page 3 of 7 0 10 8 VDS (V) 2 4 6 Gate to Source Voltage 10 8 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 VGS = 8 V Drain to Source On State Resistance RDS(on) (mΩ) 0 20 10 V 10 5 2 1 1 10 Drain Current 100 ID (A) Static Drain to Source on State Resistance vs. Temperature 50 Pulse Test 1 A, 2 A, 5 A Forward Transfer Admittance vs. Drain Current 40 30 ID = 1 A, 2 A, 5 A VGS = 8 V 20 10 V 10 2 -25 100 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) HAT2200R Tc = –25°C 10 25°C 75°C 1 VDS = 10 V Pulse Test 0.1 0 25 50 75 100 125 150 Case Temperature Tc (°C) 0.3 Body–Drain Diode Reverse Recovery Time Capacitance C (pF) Reverse Recovery Time trr (ns) 20 10 0.1 1000 300 Coss 100 1 10 Reverse Drain Current IDR Crss 30 di/dt = 100 A/µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz 10 100 (A) 0 10 VDS 16 VGS 12 100 8 50 VDS = 100 V 50 V 25 V 10 20 30 40 Gate Charge Qg (nC) Rev.2.00, Apr.05.2004, page 4 of 7 50 4 0 50 VGS = 10 V, VDS = 30 V Rg = 4.7Ω, duty < 1 % Switching Time t (ns) VDS = 100 V 50 V 25 V 40 1000 VGS (V) 200 30 Switching Characteristics 20 ID = 8 A 20 Drain to Source Voltage VDS (V) Gate to Source Voltage VDS (V) Drain to Source Voltage 100 Ciss 3000 Dynamic Input Characteristics 0 30 10000 50 150 10 Typical Capacitance vs. Drain to Source Voltage 100 250 3 1 Drain Current ID (A) 100 td(off) td(on) 10 tf tr 1 0.1 1 Drain Current 10 ID (A) 100 HAT2200R Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage VGS = 0 V, –5 V 10 V 16 Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current IF (A) 20 12 8 4 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 10 IAP = 8 A VDD = 50 V duty < 0.1 % Rg > 50 Ω 8 6 4 2 0 25 VSDF (V) 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 10 1 D=1 0.5 0.1 0.01 0.001 0.2 0.1 0.05 θ ch - f(t) = γ s (t) x θ ch - f θ ch - f = 83.3°C/W, Ta = 25°C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm) 0.02 0.01 t ho lse pu 1s PDM D= PW T PW T 0.0001 10 µ 100 µ 1m 10 m 100 m 1 Pulse Width PW (s) Rev.2.00, Apr.05.2004, page 5 of 7 10 100 1000 10000 HAT2200R Avalanche Test Circuit Avalanche Waveform EAR = L V DS Monitor 1 2 L • IAP2 • VDSS VDSS - V DD I AP Monitor V (BR)DSS I AP Rg V DS VDD D. U. T ID Vin 15 V 50Ω 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V 10% 10% V DS = 30 V 90% td(on) Rev.2.00, Apr.05.2004, page 6 of 7 10% tr 90% td(off) tf HAT2200R Package Dimensions As of January, 2003 Unit: mm 3.95 4.90 5.3 Max 5 8 *0.22 ± 0.03 0.20 ± 0.03 4 1.75 Max 1 0.75 Max + 0.10 6.10 – 0.30 1.08 *0.42 ± 0.08 0.40 ± 0.06 0.14 – 0.04 1.27 + 0.11 0˚ – 8˚ + 0.67 0.60 – 0.20 0.15 0.25 M *Dimension including the plating thickness Base material dimension Package Code JEDEC JEITA Mass (reference value) FP-8DA Conforms — 0.085 g Ordering Information Part Name Quantity Shipping Container HAT2200R-EL-E 2500pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Apr.05.2004, page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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