IPM L1/S1-series APPLICATION NOTE

IPM L1/S1-series
APPLICATION NOTE
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Table of Contents
Index
1. Product Line-up
……
3
2. Internal circuit
……
4
3. Package Outline
……
5
4. Applications of IPM to General purpose Inverter (reference)
……
8
5. Term Explanation
……
9
6. Numbering System
……
10
7. Structure
……
11
8. Correct and Safety Use of Power Module
……
15
9. Reliability
……
17
10. Installation of power Module
……
17
10-1. Installing Capacitor
……
17
10-2. Installation Hints
……
17
10-3. Thermal Impedance Considerations & Chip Layout
……
18
10-4. Coating Method of Thermal Grease (Example)
……
20
10-5. Connecting the Interface circuit
……
21
10-6. Terminal of IPM
……
22
……
24
11-1. Instruction of the symbol of a terminal of IPM
……
24
11-2. Function of the IPM
……
26
11-3. Area of Safe Operation for Intelligent Power Modules
……
27
11-4. Fault Signal of IPM
……
28
11-5. Interface Circuit Requirements
……
31
11-6. Control Power supply of IPM
……
32
11-7. Applications of IPM L1/S1-series to Motor drive
……
33
11-8. Interface of control side of IPM
……
34
11-9. Other notice of using IPM
……
37
11-10. The circuit current of control power supply of IPM
……
38
11-11. Fo Circuit
……
40
12. Power Loss and Junction Temperature
……
41
13. Average Power Loss Simplified Calculation
……
45
14. Notice for safe Designs and when Using This Specification
……
47
11. Using IPM
2
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Product Line-up
1.Product Line-up
L1-series IPM
7pack (Inverter+ Brake)
600V (AC200)
Screw type
PM50RL1A060
PM75RL1A060
PM100RL1A060
PM150RL1A060
PM200RL1A060
PM300RL1A060
6pack (Inverter)
600V (AC200)
Screw type
PM50CL1A060
PM75CL1A060
PM100CL1A060
PM150CL1A060
PM200CL1A060
PM300CL1A060
1200V (AC400V)
Screw type
Pin type
PM50RL1C060
PM50RL1B060
PM75RL1B060
PM100RL1B060
PM150RL1B060
PM25RL1A120
PM50RL1A120
PM75RL1A120
PM100RL1A120
PM150RL1A120
1200V (AC400V)
Screw type
PM25CL1A120
PM50CL1A120
PM75CL1A120
PM100CL1A120
PM150CL1A120
Pin type
PM50CL1B060
PM75CL1B060
PM100CL1B060
PM150CL1B060
S1-series IPM
6pack (Inverter)
600V (AC200)
Screw type
PM50CS1D060
PM75CS1D060
PM100CS1D060
PM150CS1D060
PM200CS1D060
Package
IPM L1-series Mini-package
Small pin type package
Pin type
PM25RL1C120
PM25RL1B120
PM50RL1B120
PM75RL1B120
Pin type
PM25CL1B120
PM50CL1B120
PM75CL1B120
1200V (AC400V)
Screw type
PM25CS1D120
PM50CS1D120
PM75CS1D120
PM100CS1D120
IPM L1-series Small-package
Screw type package
IPM L1-series Medium-package
Pin type package
IPM S1-series package
Screw type package
Screw type package
3
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Internal circuit
2.Internal circuit
㩷
7pack (Inverter+ Brake)
㩷
6pack (Inverter)
L1-series
Ex.) 7in1 type
VWPC
WP
W Fo
VWP1
VVPC
VP
VFo
VVP1
VUPC
UP
UFo
VUP1
㪈㪅㪌㫂
UN
㪈㪅㪌㫂
VN
㪈㪅㪌㫂
VN1
㪈㪅㪌㫂
VNC W N
Br Fo
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
N
W
V
U
B
P
S1-series
V N1
VN
UN
VWPC
WP
VWP1
V VPC
VP
V VP1
VUPC
UP
VUP1
㪈㪅㪌㫂
V NC W N Fo
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd In Fo Vcc
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
Gnd Si Out OT
N
W
V
U
4
P
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Package Outline
3.Package Outline
IPM L1-series Mini-package
90
14.6
80
222
10
222
10
6.7
222222
10
0.5
222
10
0.3
19-
5
9
13
20.5
5
23
2-φ4.3
MOUNTING
HOLES
0.5
25
50
1
B
P
N
U
V
W
2
12
12
12
12
14.2
12
16.5
13
(8)
25
2.5±0.5
10
L A B E L
(55)
17.5±0.5
IPM L1-series Small-package (Screw type)
L
A
B
E
L
11
120
106
7
19.75
3.25
66.5
16
3-2
16
3-2
16
3-2
1
5
9
16
2-φ5.5
MOUNTING HOLES
15.25
6-2
3
2-φ2.5
19
14.5
V
W
11.75
6-M5 NUTS
U
(13.5)
B
32
13
27.5
P
17.5
55
N
17.5
12
(19.75)
10.75
12
32.75
23
23
23
22 +– 10.5
3.15
13
(7)
(SCREWING DEPTH)
12
19-■
■0.5
5
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Package Outline
IPM L1-series Small-package (Pin type)
L A B E L
120
7
106 ±0.25
66.5
16
3.25
17
16
3-2
1
5
15.25
3-2
16
3
1.5
6-2
35
2-φ2.5
55
N
25.75
4 4
1
3-2
16
1.5
19.75
2-φ5.5
19
25
13
4 4
4φ2
.5
MOUNTING HOLES
4 4
P
9
U
V
W
1
B
4 4
2.5
4 4
4 4
19.5
22
23
23
7.75
9.5
23
98.25
27.5
9.5
11.5
19-■0.5
IPM L1-series Medium-package
135
122.1
11.7
40.5
V
6.05
18
W
U
18.7
26
(13)
26
(SCREWING DEPTH)
13
6.05
110±0.5
6-M5 NUTS
66.5
9
19-
5
1
30.15
0.5
L A B E L
6
11
4
34.7
2-φ2.5
13
33.6
19
10 3-2 10 3-2 10 3-2
24.1 +1
-0.5
11
4-φ5.5
MOUNTING HOLES
6-2
90.1
71.5
3.25
110
21.5
20
20
78±0.5
N
P
B
10.5
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Package Outline
IPM S1-series package
7
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Applications of IPM to General purpose Inverter (reference)
4.Applications of IPM to General purpose Inverter (reference)
‫ع‬AC220V Line
Motor
Ratings
(kW)
3.7
5.5/7.5
11.0
15.0/18.5
22.0
30.0
‫ع‬AC440V Line
Motor
Ratings
(kW)
5.5
7.5
11.0/15.0
18.5/22.0
30.0
For Inverter Module
For Converter
Diode
L1-series
PM50RL1A060,PM50RL1B060
PM50CL1A060,PM50CL1B060
PM50RL1C060
PM75RL1A060,PM75RL1B060
PM75CL1A060,PM75CL1B060
PM100RL1A060,PM100RL1B060
PM100CL1A060,PM100CL1B060
PM150RL1A060,PM150RL1B060
PM150CL1A060,PM150CL1B060
PM200RL1A060,PM200CL1A060
PM300RL1A060,PM300CL1A060
RM30TA-H
RM30TA-H
RM50TC-H
RM75TC-H
RM75TC-H
PM100DZ-H ˜ 3
For Inverter Module
For Converter
Diode
L1-series
PM25RL1A120,PM25RL1B120
PM25CL1A120,PM25CL1B120
PM25RL1C120
PM50RL1A120,PM50RL1B120
PM50CL1A120,PM50CL1B120
PM75RL1A120,PM75RL1B120
PM75CL1A120,PM75CL1B120
PM100RL1A120,PM100CL1A120
PM150RL1A120,PM150CL1A120
RM20TA-2H
RM50TC-2H
RM50TC-2H
RM50TC-2H
PM60DZ-2H ˜ 3
Applications of IPM to Servo Motor Controls (reference)
‫ع‬AC220V Line
Motor
Ratings
(kW)
~1.5
~2.0
~3.5
~6.0
~7.5
‫ع‬AC440V Line
Motor
Ratings
(kW)
~1.5
~3.0
~5.0
~6.0
For Inverter Module
S1-series
For Converter
Diode
PM50CS1D060
PM75CS1D060
PM100CS1D060
PM150CS1D060
PM200CS1D060
RM30TA-H
RM30TA-H
RM50TC-H
RM75TC-H
RM75TC-H
For Inverter Module
S1-series
For Converter
Diode
PM25CS1D120
PM50CS1D120
PM75CS1D120
PM100CS1D120
RM20TA-2H
RM50TC-2H
RM50TC-2H
RM50TC-2H
The above-mentioned tables are examples of the reference.
It is necessary to select the power-module (IPM) from the power-loss and the heat calculation result in the voltage,
the current, and use conditions.
8
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Term Explanation
5. Term Explanation
General 1
Symbol
IGBT
FWDi
IPM
tdead
IPM Motor
CMR
CMH
CML
CTR
General 2
Symbol
Ta
Tc
Definition
Insulated Gate Bipolar Transistor
Free Wheeling Diode
Intelligent Power Module
Dead Time
Interior Permanent Magnet Motor
Common Mode Noise Reduction
Current Transfer Ratio
Parameter
Ambient Temperature
Case Temperature
Absolute maximum Ratings
Symbol Parameter
VCES
Collector-Emitter Blocking Voltage
IC
Continuous Collector Current
ICP
Peak Collector Current Repetitive
PC
Power Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
Viso
Isolation Voltage
-
Mounting Torque
anti-parallel to the IGBT
Low side turn-off to high Side turn-on & High Side turn-off to low side turn-on
The maximum rise ratio of common mode voltage
The maximum rise ratio of common mode voltage at the specific high level
The maximum rise ratio of common mode voltage at the specific low level
the ratio of the output current to the input current
Definition
Atmosphere temperature without being subject to thermal source
Case temperature measured at specified point
Definition
Maximum Off-state collector-emitter voltage at applied control input off signal
Maximum collector current – DC
Peak collector current, Tjd150°C
Maximum power dissipation, per device, TC=25°C
Allowable range of IGBT junction temperature during operation
Allowable range of temperature within which the module may be stored or
transported without being subject to electrical load.
Minimum RMS isolation voltage capability applied electric terminal to base
plate, 1 minute duration
Allowable tightening torque for terminal and mounting screws
̪IE and IF are using by the difference of the connection and so on like the following figure.
Electrical Characteristics
Symbol
Parameter
Collector-Emitter Leakage
ICES
Current
Collector-Emitter Saturation
VCE(sat)
Voltage
Turn-on Crossover Time
tc(on)
tc(off)
Turn-off Crossover Time
Eon
Turn-on Switching loss
Eoff
Turn-off Switching loss
trr
Diode Reverse Recovery Time
VEC
Forward Voltage Drop of Diode
Rth
Thermal Resistance
Rth(j-c)
Rth(c-f)
Thermal Resistance, Junction to
Case
Thermal Resistance, Case to Fin
Definition
IC at VCE = VCES, VCIN = 15V
VCE at IC = rated IC and VD = 15V
Time from IC=10% to VCE=10% of final value
Time from VCE=10% to IC=10% of final value
Energy dissipated inside the IGBT during the turn-on of a single collector
current pulse. Integral time starts from the 10% rise point of the collector
current and ends at the 10% of the collector-emitter voltage point.
Energy dissipated inside the IGBT during the turn-off of a single collector
current pulse. Integral time starts from the 10% rise point of the
collector-emitter voltage and ends at the 10% of the collector current point.
Time from IC=0A to projection of zero IC from Irr and 0.5˜Irr points with IE =
rated IC.
VEC at -IC = rated Ic
The rise of junction temperature per unit of power applied for a given time
period
IC conducting to establish thermal equilibrium
IC conducting to establish thermal equilibrium lubricated
9
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Numbering System
6. Numbering System
Label)
L1-series Mini-package ,L1-series Small-package, S1-series
PM100RL1A060
L1-series Medium-package
PM300RL1A060
㩷
㩷
Type Name)
䌐䌍㩷 㩷 䋵䋰㩷 䌒㩷 䌌 㪈 䌁㩷 䋰䋶䋰㩷 䋭㩷 䋳䋰䋰㩷
㩷
㩷
㩷
㩷
㩷
㩷
㩷
㩷
㩷
Specification Number (Not printed on the label)
Voltage Class
㩷 㩷 060: 600V ,120: 1200V
Package
L1: L1-series
㩷 㩷 L1A: Main terminal Screw type
㩷 㩷 L1B: Main terminal Pin type
㩷 㩷 L1C: Main terminal Pin type (mini package)
S1: S1-series
Connection1
㩷 㩷 R: 7pack (Inverter+ Brake) C:6pack (Inverter)
Collector Current rating
㩷 㩷 50: Ic=50A ,75: Ic=75A
PM: Intelligent power Module(IPM)
㩷
㪣㫆㫋㩷㪥㫌㫄㪹㪼㫉㪀㩷
㩷
䌅㩷 㩷 䋰㩷 㩷 䋹㩷 㩷 䌁䌁䋳㩷 㩷 㪞㩷
㩷
㩷
㩷
㩷
Manufacturing month
(Jan~ Sept.: 1 ~ 9, Oct.: O, Nov.: N, Dec.: D)
Manufacturing year
(the last digit of year, 5=2005 6=2006 ..)
UL ID code (UL certified products only)
㩷
㩷
RoHS Compliant Symbol
Manufacturing lot management number
㩷
㩷
10
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Structure
7. Structure
ex.) L1-series Small package Screw type
1.Main electrode
2.Control input terminal
11.Internal
connection
terminal
3.Resin
5.Case
9.Control PCB
6.Wire
1
2
Part
Main electrode
Control input terminal
3
4
5
6
7
8
9
10
11
Resin
Gel
Case
Wire
Chip
Base plate
Control PCB
Insulated substrate
Internal connection terminal
4.Gel
8.Base plate
7.Chip
10.Insulated substrate
Quality of the material
Copper plated with nickel
Brass plated with gold
PBT resin
Epoxy
Silicone
PPS resin
Aluminum
Silicon
Copper
Glass epoxy
Ceramic
Copper plated with nickel
UL Flame class
UL 94-V0
UL 94-V0
UL 94-V0
UL 94-V0
Note of Insulated substrate
IPM has UL(Underwriters Laboratories Inc) Yellow Card #80276 (file. #80271).
11
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Structure
ex.) L1-series Mini package Screw type
1.Main electrode
10.Internal
connection
terminal
2.Control input terminal
8.Control PCB
3.Gel
4.Case
5.Wire
1
2
3
4
5
6
7
8
9
10
Part
Main electrode
Control input terminal
Gel
Case
Wire
Chip
Base plate
Control PCB
Insulated substrate
Internal connection terminal
7.Base plate
6.Chip
9.Insulated substrate
Quality of the material
Copper plated with nickel
Brass plated with tin
Silicone
PPS resin
Aluminum
Silicon
Copper
Glass epoxy
Ceramic
Copper plated with nickel
UL Flame class
UL 94-V0
UL 94-V0
Note of Insulated substrate
IPM has UL(Underwriters Laboratories Inc) Yellow Card #80276 (file. #80271).
12
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Structure
ex.) L1-series Medium package
1.Main electrode
4.Case
2.Control input terminal
5.Cover
9.Control PCB
6.Wire
3.Gel
7.Chip
8.Base plate
10.Insulated substrate
1
2
Part
Main electrode
Control input terminal
3
4
5
6
7
8
9
10
11
Gel
Case
Cover
Wire
Chip
Base plate
Control PCB
Insulated substrate
Internal connection terminal
Quality of the material
Copper plated with nickel
Brass plated with gold
PBT resin
Silicone
PPS resin
PPS resin
Aluminum
Silicon
Copper
Glass epoxy
Ceramic
Copper plated with nickel
11.Internal
connection
terminal
UL Flame class
UL 94-V0
UL 94-V0
UL 94-V0
UL 94-V0
Note of Insulated substrate
IPM has UL(Underwriters Laboratories Inc) Yellow Card #80276 (file. #80271).
13
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Structure
ex.) S1-series package
6.Cover
1.Main electrode
2.Control input terminal
10.Control PCB
4.Resin
7.Wire
9.Base plate
8.Chip
5.Case
3.Gel
12.Internal
connection
terminal
11.Insulated substrate
1
2
Part
Main electrode
Control input terminal
3
4
5
6
7
8
9
10
11
12
Gel
Resin
Case
Cover
Wire
Chip
Base plate
Control PCB
Insulated substrate
Internal connection terminal
Quality of the material
Copper plated with nickel
Brass plated with gold
PBT resin
Silicone
Epoxy
PPS resin
PPS resin
Aluminum
Silicon
Copper
Glass epoxy
Ceramic
Copper plated with nickel
UL Flame class
UL 94-V0
UL 94-V0
UL 94-V0
UL 94-V0
UL 94-V0
Note of Insulated substrate
IPM has UL(Underwriters Laboratories Inc) Yellow Card #80276 (file. #80271).
14
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Correct and Safety Use of Power Module
8. Correct and Safety Use of Power Module
Unsuitable operation (such as electrical, mechanical stress and so on) may lead to damage of power modules.
Please pay attention to the following descriptions and use Mitsubishi Electric's IGBT modules according to the guidance.
Cautions
During Transit
Storage
Prolonged Storage
Operating
Environment
Flame Resistance
Anti-electrostatic
Measures
Anti-electrostatic
Measures
x Keep sipping cartons right side up. If stress is applied by either placing a carton upside down or by
leaning a box against something, terminals can be bent and/or resin packages can be damaged.
x Tossing or dropping of a carton may damage devices inside.
x If a device gets wet with water, malfunctioning and failure may result. Special care should be taken
during rain or snow to prevent the devices from getting wet.
x The temperature and humidity of the storage place should be 5a35qC and 45a75 respectively.
The performance and reliability of devices may be jeopardized if devices are stored in an
environment far above or below the range indicated above.
x When storing devices more than one year, dehumidifying measures should be provided for the
storage place. When using devices after a long period of storage, make sure to check the exterior
of the devices is free from scratches, dirt, rust, and so on.
x Devices should not be exposed to water, organic solvents, corrosive gases, explosive gases, fine
particles, or corrosive agents, since any of those can lead to a serious accident.
x Although the epoxy resin and case materials are in conformity with UL 94-V0 standards, it should be
noted that those are not non-flammable.
(1) Precautions against the device rupture caused by static electricity
Static electricity of human bodies and cartons and/or excessive voltage applied across the gate to
emitter may damage and rupture devices. The basis of anti-electro static build-up and quick
dissipation of the charged electricity.
* Containers that are susceptible to static electricity should not be used for transit nor for storage.
* Gate to emitter should be always shorted with a carbon cloth or the like until right before a module is
used. Never touch the gate terminals with bare hands.
* Always ground the equipment and your body during installation (after removing a carbon cloth or the
like. It is advisable to cover the workstation and it's surrounding floor with conductive mats and
ground them.
* It should be noted that devices may get damaged by the static electricity charged to a printed circuit
board if the gate to emitter of the circuit board is open.
* Use soldering irons with grounded tips.
(2) Precautions when the gate to emitter is open
* Voltage should not be applied across the collector to emitter when the gate to emitter is open.
* The gate to emitter should be shorted before removing a device from a unit.
15
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Correct and Safety Use of Power Module
Cautions
Mounting
When mounting a module on a heat sink, a device could get damage or degrade if a sudden torque
("one side tightening ") is applied at only one mounting terminal, since stress is applied on a ceramic
plate and silicon chips inside the module. Shown in following figure is the recommended torquing
order for mounting screws.
Ԝ
ԙ
Ԙ
Ԛ
ԛ
Ԟ
ԙ
Ԙ
a) Two point mounting type
Temporary tightening :Ԙψԙ
Final tightening :ԙψԘ
Ԙ Ԛ
b) four point mounting type
ԘψԙψԚψԛ
ԛψԚψԙψԘ
ԝ
ԛ
ԙ
ԟ
c) eight point mounting type
ԘψԙψԚψԛψԜψԝψԞψԟ
ԘψԙψԚψԛψԜψԝψԞψԟ
The recommended torquing order for mounting screws
*:Temporary tightening torque should be set at 20a30 of maximum rating.
Also, care must be taken to achieve maximum contact (i.e. minimum contact thermal resistance)
for the best heat dissipation.)
The flatness of a heat sink where a module is mounted (ref. following figure) should be as
follows. Also, the surface finish should be less than Rz12s.
Copper base plate module:100Pma100Pm
Thermal compound with good thermal conductivity should be applied evenly about Aluminum
base plate modules:100Pma200Pm on the contact surface of a module and a heat sink.
Heat sink flatness: Less than ± 20 micrometers on a length of 100mm
/Less than 10 micrometers of roughness
Thermal grease thickness: +50a100Pm
Grease on the contact surface prevents the corrosion of the contact surface. However, use the
kind of grease that has a stable characteristic over the whole operating temperature range and
does not change its properties for several years.
A torque wrench shall be used in tightening mounting screws and tighten screws to the specified
torque. Excessive torquing may result in damage or degradation of a device.
Grease applied area
Power Module
Convex
The edge line of base plate
Concave
Specified range of
heat sink flatness
Heat Sink Flatness
16
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Reliability, Installation of power Module
9.Reliability
Please refer to the URL of our web site. “http://www.mitsubishichips.com/Global/index.html”
10. Installation of power Module
10-1. Installing Capacitor
During switching, voltage is induced in power circuit stray inductance by the high di/dt of the main current. This
voltage can appear on the IPM and cause damage. In order to avoid this problem, guidelines that should be
followed in designing the circuit layout are:
Ԙ
ԙ
Ԛ
ԛ
Ԝ
Located the smoothing capacitor as close as possible to the IPM
Use ceramic capacitor near the IPM to bypass high frequency current
Adopt low impedance electrolytic capacitor as smoothing capacitor
Use snubber circuit to absorb surge voltage
Decrease switching speed in order to lower di/dt.
ԙ and Ԝ are the most effective to reduce surge voltage. The stray inductance of snubber circuit generally is
not considered to avoid complicating the circuit. In addition, combination of ԙ, ԛ, Ԝ is needed since there is a
limit on the length of wiring. The bypass capacitor of approach ԙ act as a snubber when oscillation is occurring.
L1
L3
L2 small
Smoothing
Smoothing
Load
L2
L3
C
L2 large
vce
Snubber
Snubber
L1
L2
L1 : Stray inductance between the electrolytic capacitor and the IPM.
L2 : Stray inductance between the filter capacitor and the driver.
L3 : Stray inductance between the load and the power circuit's output stage
10-2. Installation Hints
When mounting IPM on a heat-sink, uneven mounting can cause the modules ceramic isolation to crack.
To achieve the best thermal radiation effect, the bigger the contact area is, the smaller the thermal resistance is.
Heat-sink should have a surface finish in range of Rz6 ~ Rz12, curvature within 100ȝm.
Uniform coating of thermal grease between the module and heat-sink can prevent corrosion of contact parts.
Select a compound, which has stable characteristics over the whole operating temperature range and does not
change its properties over the life of the equipment.
Use a uniform coating of thermal interface compound. The thickness of thermal grease should be ranked in
100~200ȝm according to the surface finish.
Mounting screws should be tightened by using a torque wrench to the prescribed torque in progressive stages
in a cross pattern. As mentioned before, over torque terminal or mounting screws may result in damage of IPM.
When an electric driver is used, thermal grease with low viscosity is recommended and extra grease must be
extruded before final tightening screws.
* For the recommended torque order for mounting screws referring to "Installation Method" in the
section of
"Correct and Safety Use of Power Module"
Note) Maximum torque specifications are provided in device data sheets. The type and quantity of thermal
compounds having an effect on the thermal resistance are determined by consideration of both thermal
grease and heat-sink. Typical value given in datasheet is measured by using thermal grease produced
by Shin-Etsu Chemical Co.,Ltd.
(G-746, which has not issued in Shin-Etsu's publications, is almost the same as G-747.)
17
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Installation of power Module
10-3. Thermal Impedance Considerations & Chip Layout
The junction to case thermal resistance Rth(j-c) and the case to heat-sink thermal resistance Rth(c-f) are given in
datasheet.
The case temperature has been measured at the just under the chip. The chip location is given with a data
sheet.
Chip
Chip
㪫㪿㪼㫉㫄㫆㩷㪺㫆㫌㫇㫃㪼㩷㪘㩷
㪫㪺㩿㫁㫌㫊㫋㩷㫌㫅㪻㪼㫉㩷㫋㪿㪼㩷㪺㪿㫀㫇㪀
plate
Base plate
Heat-sink
Heat-sink
㪫㪿㪼㫉㫄㫆㩷㪺㫆㫌㫇㫃㪼㩷㪙㩷
㪫㪽
Processes aa ditch
ditch
Processes
㨯Note
*The thermal impedance depends on the material, area and thickness of heat-sink. The smaller the area and
the thinner the heat-sink is, the lower the impedance is for the same material.
*The type and quantity of thermal compounds can affect the thermal resistance.
㩷
Thermal resistance of IPM L1-series
Thermal resistance 600V type
Type Name
PM50RL1C060
PM50RL1A060, PM50RL1B060
PM50CL1A060, PM50CL1B060
PM75RL1A060, PM75RL1B060
PM75CL1A060, PM75CL1B060
PM100RL1A060, PM100RL1B060
PM100CL1A060, PM100CL1B060
PM150RL1A060, PM150RL1B060
PM150CL1A060, PM150CL1B060
PM200RL1A060
PM200CL1A060
PM300RL1A060
PM300CL1A060
Inverter part
Just under the chip
IGBT-chip
FWDi-chip
Rth(j-c)Q
Rth(j-c)
0.74
1.28
0.44
0.75
0.44
0.75
0.37
0.63
0.37
0.63
0.32
0.52
0.32
0.52
0.25
0.41
0.25
0.41
0.20
0.30
0.20
0.30
0.15
0.23
0.15
0.23
18
Brake part
Just under the chip
IGBT-chip
FWDi(P)-chip
Rth(j-c)Q
Rth(j-c)
0.74
1.28
0.44
0.75
0.44
0.75
0.44
0.75
0.38
0.64
0.32
0.53
0.24
0.39
-
contact thermal
resistance
Rth(c-f)
0.085
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.038
0.023
0.023
0.023
0.023
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Installation of power Module
㩷
Thermal resistance 1200V type
Type Name
PM25RL1C120
PM25RL1A120,PM25RL1B120
PM25CL1A120,PM25CL1B120
PM50RL1A120,PM50RL1B120
PM50CL1A120,PM50CL1B120
PM75RL1A120,PM75RL1B120
PM75CL1A120,PM75CL1B120
PM100RL1A120
PM100CL1A120
PM150RL1A120
PM150CL1A120
Inverter part
Just under the chip
IGBT-chip
FWDi-chip
Rth(j-c)Q
Rth(j-c)
0.70
1.18
0.97
1.60
0.97
1.60
0.27
0.47
0.27
0.47
0.21
0.36
0.21
0.36
0.19
0.31
0.19
0.31
0.15
0.23
0.15
0.23
Brake part
Just under the chip
IGBT-chip
FWDi(P)-chip
Rth(j-c)Q
Rth(j-c)
0.70
1.18
0.97
1.60
0.39
0.67
0.27
0.47
0.28
0.48
0.21
0.36
-
Inverter part
Just under the chip
IGBT-chip
FWDi-chip
Rth(j-c)Q
Rth(j-c)
0.40
0.68
0.33
0.55
0.28
0.46
0.21
0.35
0.18
0.27
contact thermal
resistance
Inverter part
Just under the chip
IGBT-chip
FWDi-chip
Rth(j-c)Q
Rth(j-c)
0.37
0.59
0.25
0.41
0.20
0.32
0.18
0.27
contact thermal
resistance
contact thermal
resistance
Rth(c-f)
0.085
0.038
0.038
0.038
0.038
0.038
0.038
0.023
0.023
0.023
0.023
Thermal resistance of IPM S1-series
Thermal resistance 600V type
Type Name
PM50CS1D060
PM75CS1D060
PM100CS1D060
PM150CS1D060
PM200CS1D060
Rth(c-f)
0.046
0.046
0.046
0.046
0.046
Thermal resistance 1200V type
Type Name
PM25CS1D120
PM50CS1D120
PM75CS1D120
PM100CS1D120
Rth(c-f)
0.046
0.046
0.046
0.046
㩷
19
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Installation of power Module
10-4. Coating Method of Thermal Grease (Example)
The coating method of thermal grease is introduced in this section. The thermal grease is called as grease in
the following.
Ԙ Preparations: power module, grease, scraper or roller, electronic mass meter and gloves
ԙ Relationship between the coating amount and thickness is,
Thickness of grease㧩
amount of grease 䌛g䌝
base area of module 䌛cm 2䌝u density of grease䌛g/cm 3䌝
The recommended thickness of grease is 100ȝm~200ȝm.
The amount of grease can be obtained as the following example.
For example : For case with size of 110˜89(PM100CSD060), the amount of Shin-Etsu Chemical Co.,Ltd.
grease G-746 can be calculated through the equation below.
100㨪200ȝm㧩
amount of grease䌛g䌝
97.9䌛cm 2 䌝 u 2.66䌛g/cm 3 䌝
ѕThe amount needed isѳ2.6~5.2㨇g㨉
Ԛ
ԛ
Ԝ
ԝ
Measure the mass of module
Measure the grease with the same amount as calculated
Coating the module base uniformly by using scraper or roller
Mask print of grease.
Finally it is fulfilled to uniformly cover thermal grease on the module base with specified thickness.
Thermal Compounds
Manufacturer
Shin-Etsu Chemical Co., Ltd.
Momentive Performance Materials
Type
KS-613, G-747, else
YG6260, YG6260V
UNIVERSAL
ALCAN
JOINTING-COMPOUND
For more information, please refer to manufacturers.
Note
For non-insulation type
ALCAN UNIVERSAL JOINTING-COMPOUND is grease for the aluminum conductor connection.
The purpose of grease is electricity and a contact resistance decline by the contact-ability improvement and the
corrosion control of the aluminum surface.
It seems that there is long-range use experience but because we are not the one of the purpose to improve a
heat conduction at the contacted part, the contact thermal resistance reductional effect cannot look forward to it
too much. When employing these, the more enough radiation design becomes necessary.
20
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Installation of power Module
10-5. Connecting the Interface circuit
The input pins of Mitsubishi Intelligent Power Modules are design to be connected directly to a printed circuit board.
Noise pick up can be minimized by building the interface circuit on the PCB near the input pins of the module.
L1B,L1C type modules have tin plated control and power pins that are designed to be soldered directly to the PCB.
L1A, S1D type modules have gold plated pins that are design to be connected to the PCB using an inverse
mounted header receptacle. It is the special connector of IPM which secured an electrical clearance among the
terminals (U-V, V-W, W-U of P-side and N). The terminal with gold plate is recommended from the viewpoint of
contact reliability.
IPM type
PM50RL1C060
PM25RL1C120
Connection method and type name of connector
Main terminal
Connect by solder.
PM50RL1B060, PM50CL1B060
PM75RL1B060, PM75CL1B060
PM100RL1B060, PM100CL1B060
PM150RL1B060, PM150CL1B060
Control terminal
Connect by solder.
PM25RL1B120, PM25CL1B120
PM50RL1B120, PM50CL1B120
PM75RL1B120, PM75CL1B120
PM50RL1A060, PM50CL1A060
PM75RL1A060, PM75CL1A060
PM100RL1A060, PM100CL1A060
PM150RL1A060, PM150CL1A060
PM200RL1A060, PM200CL1A060
PM300RL1A060, PM300CL1A060
PM25RL1A120, PM25CL1A120
PM50RL1A120, PM50CL1A120
PM75RL1A120, PM75CL1A120
PM100RL1A120, PM100CL1A120
PM150RL1A120, PM150CL1A120
PM50CS1D060, PM75CS1D060
PM100CS1D060, PM150CS1D060
PM200CS1D060
PM25CS1D120, PM50CS1D120
PM75CS1D120, PM100CS1D120
Main terminal
Connect by screw (screw:M5).
Control terminal
Connect by connector.
DF10-31S-2DSA(68), or DF10-31S-2DSA(62)
(HIROSE ELECTRIC CO., LTD)
Main terminal
Connect by screw (screw:M4).
Control terminal
Connect by connector.
MDF7-25S-2.54DSA(31), or MDF7-25S-2.54DSA(32)
(HIROSE ELECTRIC CO., LTD)
21
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Installation of power Module
10-6. Terminal of IPM
(1) The material of control terminal of IPM (L1-series RL1A, CL1A type /S1-series)
As a reference of the connector selection, the material and the metal finishing of the control terminal on the
side of IPM are shown below.
Main material
Brass
The specification Substrate
of the plating
Surface
Nickel (Ni) thickness= 1 ~ 5 um
Gold (Au) thickness= 0.05 ~ 0.2 um
(2) The material of control terminal of IPM (L1-series RL1B, CL1B type)
As a reference of the connector selection, the material and the metal finishing of the control terminal on the
side of IPM are shown below.
Main material
Brass
The specification Substrate
of the plating
Surface
Nickel (Ni) thickness= 1 ~ 6 um
Tin (Sn) thickness= 4 ~ 10 um
(3) The material of control terminal of IPM (L1-series RL1C type)
As a reference of the connector selection, the material and the metal finishing of the control terminal on the
side of IPM are shown below.
Main material
Brass
The specification Substrate
of the plating
Surface
Nickel (Ni) thickness= 0.5 ~ 1 um
Tin (Sn) thickness= 2 ~ 6 um
(4) The material of main terminal of IPM
As a reference of the connector selection, the material and the metal finishing of the main terminal on the side
of IPM are shown below.
Main material
Copper
The specification Surface
of the plating
Nickel (Ni) thickness= 2 ~ 6 um
22
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Installation of power Module
(5) The main terminal of IPM
The structure of main terminal of IPM are shown bellow.
Screw
Bus (output) Wiring
IPM Nut
C
Main terminal of IPM
B
A
Screw
Deepness of
Screw Hole
Mark A (mm)
Thickness of
IPM Nut
Mark B (mm)
Thickness of
Main Terminal
Mark C (mm)
L1-series RL1A/CL1A
M5
Typ. 9.5/ min. 9.0
Typ. 4.0
Typ. 0.8
S1-series
M4
Typ. 6.5/ min. 6.0
Typ. 3.3
Typ. 0.8
Package
(6) The guide pin of IPM
The guide pin on both sides of the control terminal of IPM is metal. The guide pin is molded by plastic, and
isolated.
23
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11. Using IPM
11-1. Instruction of the symbol of a terminal of IPM
No
Name
Symbol
Equivalent Circuit
1
Power
VD
-supply
VUP1
Control IC
V*P1
VVP1
VWP1
+
Operation (description)
P
U,V,W
VN1
+
N
2
Ground
VNC
Control IC
U,V,W
VNC
VUPC
VVPC
VWPC
N
Control IC
P
V*PC
3
Control
-signal
UP
VP
WP
UN
VN
WN
PC
U,V,W
Input terminals for controlling IPM switching
operation. Operates by voltage input signals.
Internally connected to comparator.
In usual applications, external pull-up resistor is
connected to control power supply, and external
opto-coupler for insulation purpose is also
connected.
As these terminals are susceptive of noise, design
a shortest route in pattern layout and also take
care for wiring. Connect a capacitor having good
frequency characteristics between power supply
and GND.
This terminal is used with RXX series.
The purpose of this terminal is to prevent increase
in P-N voltage, which is caused by regenerative
current produced when AC motor decelerates.
In usual applications, external pull-up resistor is
connected to control power supply, and external
opto-coupler for insulation purpose is also
connected.
This terminal has the same structure as control
signal terminals, accordingly are susceptive of
noise. Take similar measures.
VCIN
GND
4
Brake
Control
-signal
Br
PC
Power supply terminals for control IC and driving
IGBT. Supply power commonly to lower arms and
individual, insulated power to upper arms.
For 6in1 and 7in1 types, 4 independent power
supplies are required; three to upper arms and one
to lower arm.
UV lock-out functions if power is 12.5VDC or
lower. Control signals are not effective for
operation under this condition. Fo signal is output.
If power is 16.5VDC or higher, operation is not
guaranteed under short circuit condition. This is
due to IGBT gate characteristics.
Typical value is 15VDC. In order to prevent
malfunction caused by noise and ripples in supply
voltage, connect a smoothing capacitor of
favorable frequency characteristics very close to
IC terminals.
Ground for reference power supply for lower arms.
This ground is common to each of three phase for
6- or 7-element types. This is also the ground of
control power supply. Bus line current should not
be allowed to flow through this terminal to avoid
noise influences.
PCB pattern should not be such that connects this
terminal and N.
This terminal is internally connected to inverter
ground N. Difference in electric potential between
N and VNC may occur in practical operation.
Grounds for reference power supply for upper arm
of each phase.
Lower power supply impedance as much as
possible for greater resistance to noise.
Insulate each phase of U, V and W.
VCIN
GND
24
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
5
Fault
-output
FO
This is the output indicating faulty state of IPM.
Faulty modes are classified into overheat, load
(arm) short circuit, control power supply under
voltage protection. This output does not make
distinction of these modes, however. The terminal
is an open collector with resistor connected in
series. It is possible to directly insert a
opto-coupler (or LED) between this terminal and
VD.
Power supply terminal to inverter.
In usual applications, connect this terminal to
positive (+) line after rectifying AC line.
Internally connected to collector of upper arm
IGBT. In order to suppress surge voltage caused
by inductance component of PCB pattern, connect
a smoothing capacitor very close to P and N
terminals. It is also effective to add a film capacitor
of good frequency characteristics.
VD
PC
+
1.5k
FO
GND
6
Inverter
Power
-supply
P
P
U,V,W
N
7
Inverter
-ground
N
Power supply ground of inverter.
In usual applications, connect this terminal to
ground (-) line after rectifying AC line.
Make connection so that bus line current flows
through this terminal. Internally connected to
emitter of lower arm IGBT. This terminal is also
connected to reference control ground VNC.
Difference in electric potential between VNC and N
may occur in practical operation due to IPM’s
internal parasitic inductance.
P
U,V,W
VNC
N
8
Output
U
V
W
Inverter output terminal.
A load such as AC motor is connected in usual
applications. Take care for generation of surge
voltage. Internally connected to mid point of IGBT
modules (IPM) of half-bridge configuration.
P
U,V,W
N
9
Brake
-output
B
P
B
N
25
This terminal is used with RXX series.
The purpose of this terminal is to prevent increase
in P-N voltage, which is caused by regenerative
current produced when AC motor decelerates.
In usual applications, power dissipating resistor
(brake resistor) is connected between this terminal
and upper arm.
Since this terminal is designed taking into account
regenerative current produced when AC motor is
decelerates, the current rating of this terminal is
about 50% of that of IGBT chip used for U, V, and
W.
This terminal cannot endure use involving special
control that allows a large current to flow.
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-2. Function of the IPM
Function
Drive
Symbol
-
Short circuit
Current
Protection
SC
Over
Temperature
Protection
OT
Under-Voltage
Lockout
Protection
UV
Controlled
Shutdown
Fault
Output
FO
Description
· Off-level input signal (VCIN >VCIN(off) ) drives IGBT off,
and on-level input signal (VCIN <VCIN(on) ) drives IGBT on.
· IPM monitors forward collector current of each IGBT by current sensor built in IGBT
chip. If the current exceeds SC trip level, IPM identifies it as short circuit and off the
IGBT performing soft shutdown.
· In case that an IGBT on lower arm have short-circuit, IPM turn off all lower IGBTs
(UN,VN,WN and Br) performing controlled shutdown.
· IPM submits fault output if IGBT has short-circuit. The fault signal is output for the
duration of tFO when IPM detecting a short circuit state, reduces the gate voltage to
halfway.
· If there is no more short-circuit state while the input signal (VCIN) is at off level, IPM
resets itself from the short-circuit protection condition with the falling edge of the next
input signal, and then the IGBT switching operation resets.
· IPM monitors each IGBT chip surface temperature. If the temperature exceeds SC
trip level, IPM identifies it as short circuit and off the IGBT performing soft shutdown.
· IPM identified to be in over temperature state when the base plate temperature
exceeds OT lever until it drops OT reset level.
· IPM submits and holds on fault output of over temperature when OT trip level is
exceeded and until the temperature falls to OT reset level.
· If there is no more over temperature state with IGBT while the input signal (VCIN) is at
off level, IPM reset itself from the over temperature protection with the falling edge of
the next input signal, and then the IGBT switching operation restarts.
· IPM monitors control power supply voltage of each arm. If the control power supply
exceeds UV trip level and continues with it for a certain duration, IPM turns off IGBT,
performing soft shutdown as long as the under voltage condition lasts.
· In case of lower arm’s UV operation, IPM turns off all lower arm’s IGBTs (UN, VN, WN
and B), performing soft shutdown.
· IPM identified to be in under voltage state when the control power supply voltage
drops UV trip level until it goes up to UV reset level.
· IPM submits and holds on fault output of under voltage after tdUV until supply voltage
returns to UV reset level.
· If there is no more under voltage state with IGBT while the input signal (VCIN) is at
off level, IPM reset itself from the under voltage protection with the falling edge of
the next input signal, and then the IGBT switching operation restarts.
· In all case of protective turn off operation, IPM reduces the IGBT’s gate voltage
gradually to final off level in order to reduce the turn-off surge voltage at large
current-off.
· Fo terminal conducts to VNC terminal over 1ms when SC,OT or UV protection of
lower arm is enabled. A resistor (1.5k) is connected inside IPM in series.
Dead time (tdead)
In order to prevent arm shoot through a dead time between high and low side input ON signals is required to be
included in the system control logic. The tdead measured directly on the IPM input terminals
IPM’ input signal VCIN
(Upper Arm)
IPM’ input signal VCIN
(Lower Arm)
0V
2V
1.5V
0V
2V
1.5V
1.5V
tdead
tdead
2V
tdead
t
t
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
26
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-3. Area of Safe Operation for Intelligent Power Modules
The IPMs built-in gate drive and protection circuits protect it from many of the operating modes that would violate the
Safe Operation Area (SOA) of non-intelligent IGBT modules. A conventional SOA definition that characterizes all
possible combinations of voltage, cur-rent, and time that would cause power device failure is not required. In order to
define the SOA for IPMs, the power device capability and control circuit operation must both be considered. The
resulting easy to use short circuit and switching SOA definitions for Intelligent Power Modules are summarized in this
section.
(1) Switching SOA
Switching or turn-off SOA is normally defined in terms of the maximum allowable simultaneous volt-age and current
during repetitive turn-off switching operations. In the case of the IPM the built-in gate drive eliminates many of the
dangerous combinations of voltage and current that are caused by improper gate drive. In addition, the maximum
operating current is limited by the over current protection circuit. Given these constraints the switching SOA can be
defined using the waveform shown in following figure. This waveform shows that the IPM will operate safely as long as
the DC bus voltage is below the data sheet VCC(prot) specification, the turn-off transient voltage across C-E terminals
of each IPM switch is maintained below the VCES specification, Tj is less than 125°C, and the control power supply
voltage is between 13.5V and 16.5V. In this waveform IOC is the maximum cur-rent that the IPM will allow without
causing an Over Current (OC) fault to occur. In other words, it is just below the OC trip level. This waveform defines the
worst case for hard turn-off operations because the IPM will initiate a controlled slow shutdown for currents higher than
the OC trip level.
Switching SOA
(2) Short Circuit SOA
The waveform in following figure depicts typical short circuit operation. The standard test condition uses a minimum
impedance short-circuit which causes the maximum short circuit current to flow in the device. In this test, the short
circuit current (ISC) is limited only by the device characteristics. The IPM is guaranteed to survive non-repetitive short
circuit and over current conditions as long as the initial DC bus volt-age is less than the VCC(prot)specification, all
transient voltages across C-E terminals of each IPM switch are maintained less than the VCES specification, Tj is less
than125°C, and the control supply volt-age is between 13.5V and 16.5V.The waveform shown depicts the controlled
slow shutdown that is used by the IPM in order to help minimize transient voltages.
Note:
The condition VCE, VCES has to be carefully checked for each IPM switch. For easing the design an-other rating is
given on the datasheets, VCC(surge), i.e., the maximum allowable switching surge voltage applied between the P and
N terminals.
SC SOA
27
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
(3) Active Region SOA
Like most IGBTs, the IGBTs used in the IPM are not suitable for linear or active region operation. Normally device
capabilities in this mode of operation are described in terms of FBSOA (Forward Biased Safe Operating Area). The
IPM’s internal gate drive forces the IGBT to operate with a gate voltage of either zero for the off state or the control
supply voltage (VD) for the on state. The IPMs under-voltage lock out prevents any possibility of active or linear
operation by automatically turning the power device off if VD drops to a level that could cause desaturation of the IGBT.
11-4. Fault Signal of IPM
IPM (Intelligent Power Modules) have sophisticated built-in protection circuits that prevent the power devices
from being damaged should the system malfunction or be over stressed. Control supply under-voltage(UV), over
temperature(OT), and short-circuit(SC) protection are all provided by the IPM's internal gate control circuits. A fault
output signal is provided to alert the system controller if any of the protection circuits are activated. Following
Fig9.7 is a block diagram showing the IPMs internally integrated functions.
UV protection
OT protection
SC protection
UVr
UVt
VD
Signal input
Fo output
Fo
Fo
Fo
16
Fo
OTr
Tj
VGE
SCt
Ic
Fig.9.7 Timing chart of Control and protection of IPM
Control Supply Under-Voltage (UV)
The IPM’s internal control circuits operate from an isolated 15V DC supply. If, for any reason, the voltage of
this supply drops below the specified under-voltage trip level (UVt), the power devices will be turned off and a
fault signal will be generated. Small glitches less than the specified tdUV(<10us) in length will not affect the
operation of the control circuitry and will be ignored by the under voltage protection circuit. In order for normal
operation to resume, the supply voltage must exceed the under voltage reset level (UVr). Operation of the
under-voltage protection circuit will also occur during power up and power down of the control supply. This
operation is normal and the system controller's program should take the fault output delay (tFo) into account.
Note)
1. Application of the main bus voltage at a rate greater than 20V/ms before the control power supply is on
and stabilized may cause destruction of the power devices.
2. Voltage ripple on the control power supply with dv/dt in excess of 5V/us may cause a false trip of the UV
lockout.
28
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
Over Temperature (OT)
The IPM has a temperature sensor mounted on surface of IGBT chips. If the temperature of the IGBT chips
exceeds the over temperature trip level (OT) the IPMs internal control circuit will protect the power devices by
disabling the gate drive and ignoring the control input signal until the over temperature condition has subsided.
The fault output will remain as long as the over temperature condition exists. When the temperature falls below
the over temperature reset level (OTr), and the control input is high (off-state) the power device will be enabled
and normal operation will resume at the next low (on) input signal.
Note)
1. Tripping of the over-temperature protection is an indication of stressful operation. Repetitive tripping
should be avoided.
Short Circuit (SC)
If a load short circuit occurs or the system controller malfunctions causing a shoot through, the IPMs built in
short circuit protection will prevent the IGBTs from being damaged. When the current, through the IGBT exceeds
the short circuit trip level (SC), an immediate controlled shutdown is initiated and a fault output is generated.
Note)
1. Tripping of the over current and short circuit protection indicates stressful operation of the IGBT.
Repetitive tripping should be avoided.
2. High surge voltages may occur during emergency shutdown. Low inductance bus-work and snubbers are
recommended.
The operating-sequence of the UV protection
a1 : The normal operation=IGBT ON
a2 : The decline of control power supply voltage (UVt)
a3 : IGBT OFF (Even if the input signal is in on state)
a4 : The rise of control power supply (UVr)
a5 : The normal operation=IGBT ON
input signal
(Low=on)㩷
Condition of
protection
circuit㩷
Control power
supply voltage㩷
SET
a4
UVr
V D㩷
UVt
a1
Output current 㩷
RESE T
a2
a5
a3
I(A )㩷
Fo signal 㩷
29
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
The operating-sequence of the OT protection
a1 : The normal operation=IGBT ON
a2 : The overheating detection (OTt)
a3 : IGBT OFF (Even if it makes an input signal to be on)
a4 : The overheating detection reset (OTr)
a5 : The normal operation=IGBT ON
input signal
(Low=ON)
Condition of
protection circuit
RESET
SET
OT
Junction
temperature
Tj
a2
OTr
a4
a3
a1
a5
Output current
I(A)
Fo signal
The operating-sequence of the SC protection
a1 : The normal operation=IGBT ON
a2 : Short current detection (SCt)
a3 : IGBT gate is blocked softly.
a4 : IGBT turn off gradually.
a5 : Fo timer start (tFo=1.8ms typ.)
a6 : Input signal “H”=OFF
a7 : Input signal “L”=ON
a8 : IGBT maintains off. (When a6~a7 occurs at the time which is shorter than tA)
input signal
Low=ON
a6
Condition of
protection circuit
a7
SET
RESET
Gate of IGBT
a3
a2
a1
SC
a4
Output current
a8
I(A)
Fo signal
a5
tA
Although IPM has internal protection circuit, it is recommended to ensure the stress which exceeds a
maximum rating does not happen repeatedly.
Therefore, if received Fo signal, please stop the control signal and stop the operation of IPM.
Because IPM doesn't exclude extraordinary cause, it has to be stopped by the system.
30
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-5. Interface Circuit Requirements
The IGBT power switches in the IPM are controlled by a low level input signal. The active low control input will keep the
power devices off when it is held high. Typically the input pin of the IPM is pulled high with a resistor connected to the
positive side of the control power supply. An on signal is then generated by pulling the control input low. The fault output
is an open collector with its maximum sink cur-rent internally limited. When a fault condition occurs the open collector
device turns on allowing the fault output to sink current from the positive side of the control supply. Fault and on/off
control signals are usually transferred to and from the sys-tem controller using isolating inter-face circuits. Isolating
interfaces allow high and low side control signals to be referenced to a common logic level. The isolation is usually
provided by opto-couplers. However, fiber optics, pulse transformers, or level shifting circuits could be used. The most
important consideration in interface circuit design is layout. Shielding and careful routing of printed circuit wiring is
necessary in order to avoid coupling of dv/dt noise into control circuits. Parasitic capacitance between high side
interface circuits, high and low side interface circuits, or primary and secondary sides of the isolating de-vices can
cause noise problems. Careful layout of control power supply and isolating circuit wiring is necessary. The following is a
list of guidelines that should be followed when designing interface circuits.
Interface Circuit layout Guidelines
a) Maintain maximum interface isolation. Avoid routing printed circuit board traces from primary and secondary sides
of the isolation device near to or above and below each other. Any layout that increases the primary to secondary
capacitance of the isolating interface can cause noise problems.
b) Maintain maximum control power supply isolation. Avoid routing printed circuit board traces from UP, VP, WP, and
N-side supplies near to each other. High dv/dts exist between these supplies and noise will be coupled through
parasitic capacitances. If isolated power supplies are derived from a common trans-former inter winding
capacitance should be minimized.
c) Keep printed circuit board traces between the interface circuit and IPM short. Long traces have a tendency to
pickup noise from other parts of the circuit.
d) Use recommended decoupling capacitors for power supplies and opto-couplers. Fast switching IGBT power circuits
generate dv/dt and di/dt noise. Every precaution should be taken to protect the control circuits from coupled noise.
e) Use shielding. Printed circuit board shield layers are helpful for controlling coupled dv/dt noise.
f)
High speed opto-couplers with high common mode rejection (CMR) should be used for signal input:
tPLH, tPHL < 0.8us
CMR > 10kV/s @ VCM = 1500V
Appropriate opto-coupler types are TLP-559(IGM), TLP-759(IGM) (TOSHIBA), HCPL-4506(AVAGO) and
PS9613(NEC). Usually high-speed opto couple require a “0.1F” decoupling capacitor close to the opto coupler.
g) Select the control input pull up resistor with a low enough value to avoid noise pick-up by the high impedance IPM
input and with a high enough value that the high speed opto transistor can still pull the IPM safely below the
recommended maximum VCIN(on).
h) If some IPM switches are not used in actual application their control power supply must still be applied. The related
signal input terminals should be pull up by resistors to the control power supply (VD) to keep the unused switches
safely in off-state.
i)
Unused fault outputs must be tied high in order to avoid noise pick up and unwanted activation of internal protection
circuits. Unused fault outputs should be connected directly to the +15V of local isolated control power supply.
31
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-6. Control Power supply of IPM
(1) The control power supply
The control supply voltage range should be within the limits shown in the specifications.
Control supply voltage VD(V)
0~4.0
Operation behavior
It is almost the same as no power supply.
External noise may cause IPM malfunction (turns ON).
Supply under-voltage protection will not operate and no
Fo signal will be asserted.
4.0~12.5
Even if control input signals are applied, IGBT does not work
Supply under-voltage protection starts operation and outputs Fo
signals.
12.5~13.5
Switching operation works. However, this value is below the
recommended one, VCE(sat) and switching time will be out of the
specified values, it may increase collector dissipation and
junction temperature.
13.5~16.5
Recommended values.
16.5~20
20.0~
Switching operation works. This range, however, is over the
recommended value, thus, too fast switching speed might
cause the chips to be damaged
The control circuit will be destroyed.
Specifications for Ripple Noise
High frequency noise super imposed on the control IC supply line might cause IC malfunction and cause an
Fo signal output, and results IPM stop (interrupt gates). To avoid such malfunction, the supply circuit should
be designed such that the noise fluctuation is smaller than +/- 5V/us, and the ripple voltage is less than 2V.
Specification:
dv
d r5V / us , Vripple d 2Vp p
dt
When the noise on the power supply line is a high frequency (pulse-width<about 50ns,pulse-vibration<about
5V) which does not cause an Fo output from IPM, the noise can be ignored.
The power supply should be a low impedance, be careful of the pattern layout.
Connect a bypass condenser with good frequency response and a smoothing condenser close to the
terminals of IPM. It is effective for the prevention of the malfunction.
Control Supply Starting up and Shutting Down Sequence
Control supply VD should be started up prior to the main supply (P-N supply).
Control supply VD should be shut down after the main supply (P-N supply).
If the main supply had been started up before the control supply, or if the main supply remains after
control supply was shut down, external noise might cause the IPM malfunction.
As for the P-side, use the control power supply which was insulated in each of all of the 2 aspects.
As for the N-side , because the GND in 2 aspects and the converter part is common, a common power can
be used for the three control sources in amount.
32
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-7. Applications of IPM L1/S1-series to Motor drive
(ex. 7in1 PM**RL1A060, PM**RL1A120)
P
20k
≥10μ
VUP1
→
VD
UFo
IF
1.5k
Vcc
Fo
UP
OT
OUT
VUPC
+
–
Si
In
U
GND GND
≥0.1μ
VVP1
VFo
VD
1.5k
OT
OUT
Fo
VP
Si
In
VVPC
V
GND GND
VWP1
WFo
Vcc
1.5k
Vcc
OT
OUT
Fo
VD
WP
Si
In
VWPC
W
GND GND
20k
→
OUT
Si
Fo
UN
In
GND GND
≥0.1μ
20k
→
OT
Vcc
≥10μ
IF
M
N
OT
Vcc
≥10μ
IF
Fo
VN
OUT
Si
In
GND GND
≥0.1μ
20k
→
VD
VN1
IF
IF
5V
In
GND GND
VNC
4.7k
→
Fo
Fo
In
1.5k
B
OT
Vcc
Br
1k
OUT
Si
Fo
WN
≥0.1μ
OT
Vcc
≥10μ
OUT
Si
GND GND
: Interface which is the same as the U-phase
Notes for stable and safe operation;
٨ Design the PCB pattern to minimize wiring length between opto-coupler and IPM's input terminal, and
also to minimize the stray capacity between the input and output wirings of opto -coupler.
٨ Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto -coupler.
٨ Fast switching opto -couplers : tpLH, tpHL҇0.8 us, Use High CMR type.
٨ Slow switching opto -coupler : CTR㧪100%
٨ Use 3 isolated control power supplies ( VD ). Also, care should be taken to minimize the instantaneous
voltage charge of the power supply.
٨ Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor
between P and N terminal.
٨ Use line noise filter capacitor ( ex. 4.7nF) between each input AC line and ground to reject common
-mode noise from AC line and improve noise immunity of the system.
33
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-8. Interface of control side of IPM
IPM (Intelligent Power Modules) is easy to operate. The integrated drive and protection circuits require only an
isolated power supply and a low level on/off control signal. A fault output is provided for monitoring the operation of
the module internal protection circuits.
(1) Circuit and circuit constant of the IPM interface circuit
The parts of connecting IPM and controller (CPU) are required to use following parts.
• Input terminal
(1) High speed opto-coupler, (2) Pull-up resistor
(3) Condenser (Ceramic condenser for the ripple removal
and electrolytic condenser for the power stabilization)
• Fo terminal
(4) Low(high) speed opto-coupler
• Control power supply
(5) The mutually insulated stabilized power source of +15 V
(The negative power as it uses in IGBT-MOD is unnecessary.)
Example of constant value of the IPM interface circuit
Symbol
Name
Recommend Value
Note
Rin
Pull-up resistor
20kȍ
All input terminal (include Br)
C1
Smoothing capacitor
< 10uF
It is necessary that the charge and
discharge electric current and the
dv/dt electric current to IPM(IGBT
Cp
Bypass condenser
< 0.1 ~ 1uF
gate) can be sufficiently absorbed.
PC
Opto-coupler
High CMR, CTR
ex.) TLP-559(IGM), PS9613 etc
(2) IPM Internal circuit diagram and interface circuit
15V Control
power spply
C1
҈10u
4KP
M
IPM
Vcc
High speed
opto-coupler
Vcin
Cp
0.1u~1uF
100pF
GND
Fo
1.5k
.QYURGGFQRVQEQWRNGT
(3) IPM Control terminals
The IGBT power switches in the IPM are controlled by a low level input signal. The active low control input will
keep the power devices off when it is held high. Typically the input pin of the IPM is pulled high with a resistor
connected to the positive side of the control power supply. An ON signal is then generated by pulling the control
input low.
The recommended value of the pull-up resistor is 20 kȍ but it can be smaller for the noise countermeasure
and so on. However, if the pull-up resistor is set too small, it will affect the lifetime of the opto-coupler, please
confirm the characteristics with lifetime and so on in the opto-coupler manufacturer.
The inside of the control input terminal is connected to the comparator and is with high impedance.
When IPM (IGBT) is turn-off , the output impedance of the opto-coupler becomes high. Total impedance of the
circuit which connect the interface circuit is equal to a resistance of about 20Kȍ.
34
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
(4) Example of opto coupler
The example of the opto-coupler recommended for IPM is shown below.
High speed opto coupler
High speed opto couplers are connected to the control input terminals of IPM.
When choosing opto coupler, pay attention to the parameters of response time (tpLH, tpHL) and CMR.
Choose the opto coupler that the value of tpLH, tPHL is less than 0.8us, and with high CMR.
Especially, ensure that the phenomena such as the ringing not occur.
For example)
PS9613 (NEC)
TLP559 (IGM), TLP759 (IGM) (Toshiba)
HCPL-4503, HCPL-4504, HCPL-4506 (Avogo TECHNOLOGIES)
The opto-coupler manufacturer sometimes has the IPM exclusive-goods ( another form name ) which sorted
out a characteristic. Please inquire the opto-coupler of IPM compatible for the malfunction prevention when
order.
Low speed opto coupler
Low speed opto coupler is connected Fo terminal of IPM.
When choosing opto coupler, pay attention to the parameter of CTR.
Choose the opto coupler that the value of CTR is equal to or more than 100 %.
For example)
TLP-521 (Toshiba)
PS2502 (NEC)
Please inquire the manufacturer that the opto-coupler has or has not problem when work under your
environmental condition.
35
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
(5) Notice of using opto coupler
The opto coupler can isolate the primary side and secondary side. But, this is not correct at the high frequency.
Because, opto coupler have a parasitic capacity between primary side and secondary side. When high dv/dt is
impressed, the pulse electric current flows from the primary side to the secondary side via the parasitic
capacity of opto coupler. This current sometimes turn on the opto coupler.
Therefore, it is important to design a circuit so that the LED will not turn on erroneously by this dv/dt.
When the input signal is OFF, make sure the circuit that the LED of primary side of opto coupler is with
low-impedance.
The LED is ON and
outputs extraordinarily ON signal.
IPM
OFF
Parastic capacity
dv/dt current
The example of a circuitry which is not good
IPM
The example of the circuit to recommend
The recommended circuit doesn't make malfunction (LED of primary side of opto coupler is ON) because the
dv/dt current can not turn ON the LED of primary side of opto coupler.
Please consult the application-note of the opto coupler for the detailed instruction of the circuit around the opto
coupler.
36
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-9. Other notice of using IPM
(1) The treatment of the terminal not to use
Type CL1A,CL1B have B terminal. These terminal aren’t connected to the circuit. The pattern can be
connected with this terminal. However, pay attention to the wiring. When connecting a pattern with these
terminals, the noise might invades IPM via the terminals. Please just leave these terminals open.
If any phase of the IPM is not used, the corresponded control power supply in the circuit will not use. Please
pull-up the corresponded input terminals and make IGBT off. This is to prevent the erroneous turn on of the
circuit by noise.
(2) The connection of the control side GND(VNC/V*PC) and output emitter GND (N or U/V/W)
Do not connect the control side GND and the output emitter GND on the printed circuit board. Otherwise It
will be easy to undergo influence by the noise. VNC and the N terminal are connected inside IPM. If
connecting VNC and N terminal, the current which should flow through N sometimes flows to VNC. Then,
the electric potential difference occurs between N and VNC by parasitic inductance inside and might cause
IC malfunction.
㧵㧼㧹
㧵㧼㧹
㨂㧰㧰
㨂㧰㧰
㧵㧺
The course
㔚ᵹ⚻〝
of
the current
㧵㧺
The course
㔚ᵹ⚻〝
of the current
㨂㧼㧯
㨂㧼㧯
㨂㧰㧰
㨂㧰㧰
㧵㧺
㧵㧺
㨂㧺㧯
㨂㧺㧯
ㅅ⿛㔚ᵹߦࠃࠆࡁࠗ࠭
The noise
which occurs with stray -current
࿁〝㔚ᵹߩߺࠍᵹߔࠃ߁ߦ
㪣㪸㫐㫆㫌㫋㩷㫋㫆㩷㫇㪸㫊㫊㩷㫆㫅㫃㫐㩷㪸㩷㪺㫀㫉㪺㫌㫀㫋㩷㪺㫌㫉㫉㪼㫅㫋㪅
ࡄ࠲࡯ࡦࠍ࡟ࠗࠕ࠙࠻ߔࠆ
(3) The circuit structure inside
The IPM is built up with IGBT chip, FWDi chip, Control IC and the other discreet parts(R, C).
Gate of IGBT chip is MOS structure. However, The gate of IGBT chip doesn’t directly connect to the control
terminal of IPM. VD, Input, Fo and GND terminal are connected to the control IC. It is possible to consider the
terminal of IPM to be a bipolar structure. The countermeasure against static electricity like conventional IC
with MOS structure is unnecessary to IPM.
(The handling of IPM is equal to that of a bipolar IC.)
VCC
VCC
IN
IN
C
C
Control IC
IGBT
FWDi
FWDi
Driver
Driver
Fo
Fo
E
GND
GND
(4) The parallel operation
The IPM is not recommended for parallel operation.
Because the balance of the switching time and the current are not identical, the IPM with larger loss might be
thermally damaged because it isn't possible to do the protection-coordination of each IPM.
37
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-10. The circuit current of control power supply of IPM
The circuit current of control power supply of IPM is shown below. This current is average of DC and fc=20kHz.
L1-series
Condition : VD=15V,Tj=25°C, Unit : mA
IPM L1-series
䌎-side
DC
20kHz
Type. Name
Typ
Max
Typ
Max
PM50RL1C060
8
16
21
27
PM50RL1A/RL1B060
8
16
26
34
PM50CL1A/CL1B060
6
12
22
29
PM75RL1A/RL1B060
8
16
32
42
PM75CL1A/CL1B060
6
12
27
35
PM100RL1A060
8
16
37
48
PM100CL1A060
6
12
32
42
PM150RL1A060
8
16
51
66
PM150CL1A060
6
12
44
57
PM200RL1A060
8
16
75
98
PM200CL1A060
6
12
64
83
PM300RL1A060
8
16
99 129
PM300CL1A060
6
12
84 109
PM25RL1C120
8
16
25
33
PM25RL1A/RL1B120
8
16
32
42
PM25CL1A/CL1B120
6
12
27
35
PM50RL1A/RL1B120
8
16
50
65
PM50CL1A/CL1B120
6
12
43
56
PM75RL1A/RL1B120
8
16
70
91
PM75CL1A/CL1B120
6
12
59
77
PM100RL1A120
8
16
94 122
PM100CL1A120
6
12
80 104
PM150RL1A120
8
16 132 172
PM150CL1A120
6
12
11 5 1 5 0
Condition : VD=15V,Tj=25°C, Unit : mA
IPM S1-series
䌎-side
DC
20kHz
Type. Name
Typ
Max
Typ
Max
PM50CS1D060
6
12
20
26
PM75CS1D060
6
12
25
33
PM100CS1D060
6
12
32
42
PM150CS1D060
6
12
41
53
PM200CS1D060
6
12
52
63
PM25CS1D120
6
12
22
29
PM50CS1D120
6
12
36
47
PM75CS1D120
6
12
49
64
PM100CS1D120
6
12
65
85
P-side (1 phase)
DC
20kHz
Typ
Max
Typ
Max
2
4
7
9
2
4
7
9
2
4
7
9
2
4
9
12
2
4
9
12
2
4
11
14
2
4
11
14
2
4
14
18
2
4
14
18
2
4
20
26
2
4
20
26
2
4
25
33
2
4
25
33
2
4
9
12
2
4
9
12
2
4
9
12
2
4
14
18
2
4
14
18
2
4
19
25
2
4
19
25
2
4
26
34
2
4
26
34
2
4
33
43
2
4
33
43
S1-series
38
P-side (1 phase)
DC
20kHz
Typ
Max
Typ
Max
2
4
7
9
2
4
9
12
2
4
10
13
2
4
14
18
2
4
17
22
2
4
8
10
2
4
13
17
2
4
17
22
2
4
21
29
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
The circuit current of control power supply of IPM increases with the carrier frequency.
The carrier frequency dependence of the circuit current of the IPM control power supply can be approximated
as a straight line like the following figure.
ID
(mA)
Max
Control
input signal
(Low-ON)
IPM
VCC
Control
power supply
current
Carrier frequency
(kHz)
DC
10
IN
IGBT
0A
Typ
Gate
current
GND
0A
CGE
20
The gate of IGBT used in IPM has an input-capacitance (Cies =CGE+CCG).
The current to be charge and discharged by flowing through the gate at the timing of gate on and off.
There is IPM that this current becomes 1~2 A.
When IPM is turn-off, the dv/dt current from the collector of IGBT flows into the side of the control power supply.
Design a control power supply in the low impedance so that this dv/dt current can be absorbed. Otherwise, The
control IC of IPM might make malfunction and On signal is activated by this current resulting arm short circuit.
The control power supply circuit needs a capacity that it can supply and absorb these current.
Usually, such problems (maximum current, impedance) can be avoided by power supply circuit and also
bypass, smoothing condenser. But, the effect of the condenser is influenced by the inductance of the wiring
pattern. Determine the condenser capacity after verifying the substrate and the equipment.
39
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Using IPM
11-11. Fo Circuit
In order to keep the interface circuits simple the IPM uses a single on/off output to alert the system controller of all fault
conditions. The system controller can easily determine whether the fault signal was caused by an over temperature or
over current/short circuit by examining its duration. Short circuit and over current condition fault signals will be tFO
(typical 1.8ms) in duration.
Unused fault outputs of P-side
Unused fault outputs must be properly terminated by connecting them to the “+15V” on the local control power supply.
Failure to properly terminate unused fault outputs may result in unexpected tripping of the modules internal protection.
When not using Fo by the P-side, protection coordination cannot be carried out to the earth fault, which goes only via
the P-side. The protected operation of IPM assumes the abnormality of a non-repetition. IPM may be destroyed, if an
abnormal condition is repeated and stress is added to IPM. Please make protection coordination by the system side to
the abnormality caused repeatedly.
40
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Power Loss and Junction Temperature
12. Power Loss and Junction Temperature
Junction temperature can be used as an indication of IGBT module situation. This section will discuss how to calculate
junction temperature and give an example based on waveform shown in Fig.12.1. Here, only power loss of IGBT part is
given. The power loss of Diode can be obtained by using the same method as IGBT part. Moreover, junction
temperature must never be outside of the maximum allowable value. It also has impact on the power cycle life.
Fig.12.1
a㧚Power Loss
In order to estimate junction temperature for thermal design, it is necessary to compute total power loss. The first
step is the calculation of power loss per pulse.
Two most important sources of power dissipation that must be considered are conduction losses and switching
losses. (Fig.12.2)
(2) Switching Losses
(1) Conduction Losses
The most accurate method of determining
switching losses is to plot the Ic and VCE waveforms
The total power dissipation during conduction is
during the switching transition. Multiply the
computed by multiplying the on-state saturation
waveforms point by point to get an instantaneous
voltage by the on-state current.
power waveform. The area under the power
waveform is the switching energy expressed in
IC1 u VCE( sat )1 IC2 u VCE( sat )2
E( sat )
u tw1 (J)
watt-seconds/pulse or J/pulse.
2
tb
n
Note)The above equation is a simplification of the
1
Eon
IC( t ) x VCE( t )dt
Pn u ( tb ta )
below one
n n1
tw '
³
E( sat )
³ I (t ) x V
C
ta
CE( t )dt
0
VCE(sat) VS㧚Ic characteristics at Tj=125°C is used in
power loss calculation.
IC
VCE
IC
IC1
VCE
¦
n: number of partitions
(divide interval between ta and tb equally into n parts,
compute average power loss for each interval.)
Calculation of Eoff has the same method.
The total power loss of one pulse is the sum of (1)
and (2).
E1 E( sat ) Eon Eoff
IC2
t
P
t
Eon
E (sat)
tw’
tw1
Fig.12.3
Eoff
Fig.12.2
41
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Power Loss and Junction Temperature
(3) Average Power Loss
The average power loss per pulse is
E1
(W)
P1
tw 1
Fig.12.4 is approximation of Fig.12.1 by using rectangle wave.
Fig.12.4
Average power loss during period of tw2 is (See Fig.12.5)
E1
Pav
u N (W)
tw 2
N㧦pulse numbers in tw2 period
Fig.12.5
Total average power loss is (See Fig.12.6)
tw 2
(W)
PAV Pav u
T2
Fig.12.6
b. Junction Temperature Calculation
Junction temperature can be calculated by using P1, Pav, and PAV that has been obtained so far. Three cases
should be considered according to pulse width.
(1) tw1 is short (tw1<<1ms)
(2) Both of tw1 and tw2 are long(1ms<tw1<tw2<1s)
(3) tw2 is longer than 1s.(tw2>1s)
42
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Power Loss and Junction Temperature
(1) tw1<<1ms
In case of short on interval or low duty as in Fig.12.5, Junction temperatures rise to the highest value at the
turn-off moment of tw2 while the case temperature is stationary. (See Fig.12.7)
Fig.12.7
Fig.12.8
Temperature difference between junction and case can be calculated by using the following formula.
ٌT(j-c)㧩Rth(j-c)˜PAV㧙Zth(j-c)(tw2)˜PAV㧗Zth(j-c)(tw2)˜Pav㧩Rth(j-c)˜PAV㧗(Pav㧙PAV)˜Zth(j-c)(tw2)
Rth(j-c)
̖̖thermal resistance between junction and case
Zth(j-c)(tw2) ̖̖thermal impedance between junction and case at tw2 moment
ѕTj㧩Tc㧗ٌT(j-c) (Tc is measured by thermo-couple.)
Tj(max)=150°C, therefore the allowable case temperature Tc(max) is, Tc(max)=150-ٌT(j-c).
(2) 1ms<tw1<tw2<1s
In this case, ripple should be considered in calculation of average power loss P1.
Using approximation similar to (1) Fig.12.9 is obtained for calculation.
Fig.12.9
ٌT(j-c)㧩Rth(j-c)˜PAV㧙Zth(tw2)˜PAV㧗Zth(j-c)(tw2)˜Pav㧙Zth(j-c)(tw1)˜Pav㧗Zth(j-c)(tw1)˜P1
㧩Rth(j-c)˜PAV㧗(Pav㧙PAV)˜Zth(j-c)(tW2)㧗(Pl㧙Pav)˜Zth(j-c)(tw1)
Rth(j-c)
̖̖thermal resistance between junction and case
̖̖thermal impedance between junction and case at tw2 moment
Zth(j-c)(tw2)
Zth(j-c)(tw1)
̖̖thermal impedance between junction and case at tw1 moment
ѕTj㧩Tc㧗ٌT(j-c)
(Tc is measured by thermo-couple.)
Tc(max)㧩150㧙ٌT(j-c)
43
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Power Loss and Junction Temperature
(3) tw2>1s
In a similar way to (2), temperature change of heat-sink should be taken into consideration as well. It is
necessary to know the transient heat impedance of the heat-sink. (Fig.12.9)
Fig.12.9
Similarly, the temperature difference between junction and ambient can be calculated by using the following
formula.
ٌT(j-a)㧩Rth(j-a)˜PAV㧙Zth(j-a)(tw2)˜PAV㧗Zth(j-a)(tw2)˜Pav㧙Zth(j-a)(tw1)˜Pav㧗Zth(j-a)(tw1)˜P1
㧩Rth(j-a)˜PAV㧗(Pav㧙PAV)˜Zth(j-c)(tw2)㧗(P1㧙Pav)˜Zth(j-c)(tw1)
ѕTj㧩Ta㧗ٌT(j-a)
(Ta is measured by a thermometer.)
c. Heat-sink Selection
Fig.12.10 shows the thermal equivalent circuit
when two or more modules are mounted on one
heat sink.
According to this equivalent circuit, the temperature
of the heat sink is
Tf㧩Ta㧗(PT(AV)㧗PD(AV))˜NxRth(f-a)
Ta㧦Ambient temperature
PT(AV):Average power loss of IGBT
PD(AV):Average power loss of FWDi
N: Arm number
Rth(f-a):The heat-sink to ambient thermal
resistance
The case temperature Tc is,
Tc㧩Tf㧗(PT(AV)㧗PD(AV))˜Rth(c-f)
Rth(c-f)㧦The case to heat-sink thermal
resistance
Tc(max) can be calculated by using the below
formula.
ѕTc(max)㧩Ta㧗(PT(AV)㧗PD(AV))˜NxRth(f-a)㧗(PT(AV)
㧗PD(AV))˜Rth(c-f)
Therefore, the heat-sink to ambient thermal
resistance can be computed as
TC(max) Ta (PT( AV ) PD( AV )) u Rth( c f )
Rth( f a )
(PT( AV ) PD( AV )) u N
44
Moreover, power loss of FWDi should be
considered as well. In thermal design, the
allowable case temperature Tc(max) is up to the
smaller one of IGBT power loss and FWDi part.
Fig.12.10 Thermal Calculation Model
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Average Power Loss Simplified Calculation
13. Average Power Loss Simplified Calculation
(1) VVVF Inverter
‫ع‬Applicability Range
It is applicable to total power loss calculation for selection of IGBTs used in VVVF inverters.
It is not applicable in the thermal design of the device (limit design).
‫ع‬Assumption Condition
Ԙ PWM modulation used to synthesize sinusoidal output currents in VVVF inverters
ԙ PWM signal generated by comparing sinusoidal wave to triangular wave
1 D 1 D
Ԛ Duty cycle of PWM among the rank of
~
(% / 100 )
D : modulation rate
2
2
ԛ Output current of ICP㨯sin x without ripple
Ԝ With inductive load rate of cosǰ
‫ع‬Calculation Equation
Duty cycle of PWM is constantly changing and its value equal to time x
1 D u sin x
at the corresponding
2
moment.
The output current corresponds to the output voltage change and this relationship is represented by power
factor cosǰ. Therefore, the duty cycle of PWM corresponding to output current at arbitrary phase x is
Output current Icp u sin x
1 D u sin( x T)
PWM Duty
2
VCE(sat) and VEC at this moment are
Vce(sat )
Vce(sat )(@ Icp u sin x )
Vec Vec (@( 1) u Iecp( Icp) u sin x )
Static power loss of IGBT is
1 S
1 D sin( x T)
(Icp u sin x ) uVce(sat )(@ Icp u sin x ) u
x dx
2S 0
2
Similarly, static power loss of FWDi is
1 2S
1 D sin( x T)
(( 1) u Icp u sin x ) u ( Vec(@( 1) u Icp u sin x ) u
x dx
2S S
2
On the other hand, dynamic power loss of IGBT is not dependent on the PWM duty and can be expressed as
the following formula.
1 S
(Psw(on)(@ Icp u sin x ) Psw(off )(@ Icp u sin x )) ufc x dx
2S 0
³
³
³
As for dynamic power loss of free-wheeling diode, calculation is given by an example of ideal diode shown in
Fig.13.1.
㫋㫉㫉
㪠㪼㪺
㪭㪼㪺
㫋
㪠㫉㫉
㪭㪺㪺
Fig.13.1㧚Dynamic Power Loss of FWDi
45
Sep. 2008
Mitsubishi IPM L1/S1-Series Application Note
Average Power Loss Simplified Calculation
Irr u Vcc u trr
4
Psw
Because reverse recovery of free-wheeling diodes occurs in half cycle of the output current, the dynamic
power loss of FWDi is
1
2
S
Vcc u trr(@ Icp u sin x )
u fc x dx
4
1
8
³ Irr(@ Icp u sin x) u Vcc u trr(@ Icp u sin x) u fc x dx
³
2 S Irr(@ Icp u sin x ) u
2S
S
‫ع‬Inverter Loss Calculation Notes
࡮Divide one cycle of output current into many equal intervals, then calculate actual "PWM duty", "Output
current", and "VCE(sat), VEC, and Psw responding to the current" in each interval. The power loss during one
cycle is the sum of each interval.
࡮The PWM duty depends on the method of generating the signal.
࡮The output current waveform and the relationship between output current and PWM duty cycle are
dependent on signal generator, load and other factors. Therefore, calculation should always be done with
actual waveforms.
࡮VCE(sat) uses the value of Tj=125°C.
࡮Psw uses the value under half bridge operating case at Tj=125°C.
‫ ع‬Thermal Design Notes
Ԙ It is necessary to examine the worst switching condition.
ԙ Consideration of temperature variation due to current cycle should be given in thermal design.
(Temperature variation rate is 30% to 35% for 60Hz case. When the output current of several Hz switches
for a few seconds, it almost has equal temperature to a direct current with the same peak value
continuously flowing. )
Ԛ Temperature ripple caused by switching operation should be considered especially when switching
frequency is much lower than 10kHz.
46
Sep. 2008
14. Notice for safe Designs and when Using This Specification
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable,
but these are always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (1) placement of substitutive, auxiliary circuits, (2) use of non-flammable
material or (3) prevention against any malfunction or mishap.
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