Data Sheet Fast Recovery Diode RF101L2S Applications General rectification Land size figure (Unit : mm) Dimensions (Unit : mm) 2.0 ① ② 0.1±0.02 0.1 4.2 PMDS 2.0±0.2 1.5±0.2 Construction Silicon epitaxial 5.0±0.3 6 1.2±0.3 6 4.5±0.2 3)Ultra high switching speed 4)Low switching loss 2.0 2.6±0.2 Features 1)Small power mold type. (PMDS) 2)Ultra low VF Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture date Taping dimensions (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Forward current surge peak (60Hz・1cyc) Io IFSM Junction temperature Storage temperature Tj Tstg Limits Unit 200 200 1 20 150 55 to 150 V V A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage Reverse current VF - 0.815 0.87 V IF=1.0A IR - 0.01 10 μA Reverse recovery time trr - 12 25 ns VR=200V IF=0.5A,IR=1A,Irr=0.25*IR www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.B Data Sheet RF101L2S 1 Ta=150℃ 10000 100 Ta=125℃ Ta=125℃ Ta=75℃ 0.01 Ta=25℃ Ta=-25℃ 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 10 0.01 0.001 0 1 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 200 0 830 820 810 AVE:818.6mV 80 70 60 50 40 AVE:11.1nA 30 20 70 50 40 30 AVE:37.0pF 20 10 0 IR DISPERSION MAP 200 Ct DISPERSION MAP 1cyc 8.3ms 100 50 AVE:63.0A 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 30 Ifsm 15 10 AVE:12.2ns 5 0 Ifsm 8.3ms 8.3ms 1cyc 100 0 10 1 1 trr DISPERSION MAP IFSM DISRESION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 100 10 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1m 100 IF=100mA Rth(j-a) time DC 1.5 300u Rth(j-c) 10 1 0.1 0.001 100 2 FORWARD POWER DISSIPATION:Pf(W) 1000 IM=10mA 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Mounted on epoxy board 1000 30 60 0 VF DISPERSION MAP 150 80 10 800 25 Ta=25℃ f=1MHz VR=0V n=10pcs 90 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 840 Ta=25℃ VR=200V n=30pcs 90 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=1A n=30pcs 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 100 100 850 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) f=1MHz f=1MHz Ta=150℃ D=1/2 Sin(θ＝180) 1 0.5 0 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 0.5 1 1.5 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2011.05 - Rev.B Data Sheet RF101L2S 2 t t T DC T Io V VR D=t/ D=t/T VR=100V Tj=150℃ D=1/2 1 Sin(θ＝180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0A0 0V0 2 30 Io t t DC VR D=t/T T VR=100V T Tj=150℃ D=1/2 1 Sin(θ＝180) No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 3 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIEd FORWARD CURRENT:Io(A) 3 25 20 15 10 AVE:13.6kV 5 0 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A