ROHM RB160L

Data Sheet
Schottky barrier diode
RB160L-60
Applications
General rectification
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
4
①
②
0.1±0.02
0.1
4.2
5.0±0.3
3) High reliability
4
4.5±0.2
Features
1) Small power mold type. (PMDS)
2) Low IR.
1.2±0.3
2.0
2.6±0.2
PMDS
2.0±0.2
1.5±0.2
Structure
Construction
Silicon epitaxial planar
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping specifications (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
VRM
Reverse voltage (DC)
VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz/1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Limits
Unit
V
V
A
A
C
C
60
60
1
30
150
40 to 125
(*1) Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
VF
Min.
-
Typ.
-
Max.
0.58
Unit
V
Reverse current
IR
-
-
1
mA
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
Conditions
IF=1.0A
VR=60V
2011.04 - Rev.D
Data Sheet
RB160L-60
Electrical characteristics curves
10000
Ta=25C
Ta=-25C
10
1
100
10
Ta=25C
1
Ta=-25C
0.1
0.01
200
400
600
10
20
30
40
50
60
0
530
520
510
AVE:529.4
500
25
20
15
10
AVE:3.724
5
0
50
AVE:126.0A
0
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
170
160
AVE:192.4pF
Ct DISPERSION MAP
200
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
100
REVERSE RECOVERY TIME : trr(ns)
1cyc
8.3ms
25
180
30
Ifsm
20
190
IR DISPERSION MAP
200
15
150
VF DISPERSION MAP
150
10
200
Ta=25C
VR=60V
n=30pcs
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
540
REVERSE CURRENT : IR(uA)
Ta=25C
IF=1A
n=30pcs
5
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
30
550
10
1
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE : V F(mV)
100
0.001
0
PEAK SURGE
FORWARD CURRENT : I FSM(A)
f=1MH
Ta=75C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125C
100
1000
Ta=125C
1000
Ta=75C
REVERSE CURRENT : IR(uA)
FORWARD CURRENT : I F(mA)
1000
15
10
AVE:11.7ns
5
0
Ifsm
150
8.3ms 8.3ms
1cyc
100
50
0
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
10
200
t
100
50
0
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2
Mounted on epoxy board
Rth(j-a)
100
FORWARD POWER
DISSIPATION : Pf(W)
150
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
Ifsm
Rth(j-c)
10
IF=0.5A
IM=10mA
1
1ms
tim
1.5
D=1/2
Sin(=180)
1
DC
0.5
300us
0.1
0.001
0
0.1
10
TIME : t(s)
Rth-t CHARACTERISTICS
2/3
1000
0
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
2011.04 - Rev.D
3
0.02
Sin(=180)
0.01
DC
D=1/2
3
Io
0A
2.5
0V
DC
2
VR
t
T
1.5
D=t/T
VR=30V
Tj=125C
D=1/2
1
0.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.03
REVERSE POWER
DISSIPATION:PR (W)
Data Sheet
RB160L-60
0V
DC
2
5
10
15
20
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
D=t/T
VR=30V
Tj=125C
1.5
D=1/2
1
0.5
Sin(=180)
0
0
0
VR
t
T
Sin(=180)
0
Io
0A
2.5
0
25
50
75
100
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
125
0
25
50
75
100
125
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
No break at 30kV
25
20
15
10
5
AVE:8.70kV
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.D
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A