ROHM BD00HA3MEFJ-E2

Datasheet
Automotive 0.3A Variable Output
LDO Regulator
BDxxHA3MEFJ-M
●General Description
BDxxHA3MEFJ-M is a LDO regulator with output current 0.3A. The output accuracy is ±1% of output voltage. With external
resistance, it is available to set the output voltage at random (from 1.5V to 7.0V).It has package type: HTSOP-J8. Over
current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting the
circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load condition)
are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.
●Package
HTSOP-J8
●Features
„ High accuracy reference voltage circuit
„ Built-in Over Current Protection circuit (OCP)
„ Built-in Thermal Shut Down circuit (TSD)
„ With shut down switch
„ AEC-Q100 Qualified
(Typ.)
(Typ.)
(Max.)
4.90mm x 6.00mm x 1.00mm
●Key Specifications
„ Input power supply voltage range:
4.5V to 8.0V
„ Output voltage range(Variable type):
1.5V to 7.0V
„ Output voltage(Fixed type): 1.5V/1.8V/2.5V/3.0V/3.3V
5.0V/6.0V/7.0V
„ Output current:
0.3A (Max.)
„ Shutdown current:
0μA(Typ.)
„ Operating temperature range:
-40℃ to +105℃
HTSOP-J8
●Typical Application Circuit
VCC
VO
CIN
VCC
R1
COUT
CIN
FB
EN
GND
FIN
VO_S
COUT
EN
R2
GND
CIN,COUT : Ceramic Capacitor
○Product structure：Silicon monolithic integrated circuit
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TSZ22111･14･001
VO
FIN
CIN,COUT : Ceramic Capacitor
○This product is not designed protection against radioactive rays.
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Datasheet
BDxxHA3MEFJ-M
●Ordering Information
B
D
x
x
Part
Output
Number voltage
00:Variable
15:1.5V
18:1.8V
25:2.5V
30:3.0V
33:3.3V
50:5.0V
60:6.0V
70:7.0V
H
A
3
Voltage
Output
resistance current
H:10V
A3:0.3A
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© 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
M
E
F
J
-
Automotive Package
“M”:M series
EFJ:HTSOP-J8
2/21
M
E
2
Packaging and forming specification
E2:Emboss tape reel
TSZ02201-0R6R0AN00250-1-2
2012.8.31 Rev.001
Datasheet
BDxxHA3MEFJ-M
●Block Diagram
BD00HA3MEFJ-M
GND
8
3
VCC
(VO+0.90) to 8.0V
Ceramic
≧ 1.0μF
Capacitor
OCP
SOFT
START
1.5V to 7.0V
Vo
1
Ceramic
Capacitor ≧ 1.0μF
R1
2
EN
5
FB
TSD
R2
Fig.1 Block Diagram
BDxxHA3MEFJ-M (Fixed type)
VCC
4.5～8.0V
8
Ceramic
≧ 1.0μF
Capacitor
OCP
SOFT
START
VO
EN
5
1
TSD
Ceramic
≧ 1.0μF
Capacitor
2
GND
VO_S
3
FIN
Fig.2 Block Diagram (Fixed type)
●Pin Configuration
TOP VIEW
VO
VCC
FB/Vo_s
N.C.
GND
N.C.
N.C.
EN
●Pin Description
Pin No.
Pin name
1
VO
2
FB/Vo_s
3
GND
4
N.C.
5
EN
6
N.C.
7
N.C.
8
VCC
Reverse
FIN
Pin Function
Output pin
Feedback pin
GND pin
Non Connection (Used to connect GND or OPEN state.)
Enable pin
Non Connection (Used to connect GND or OPEN state.)
Non Connection (Used to connect GND or OPEN state.)
Input pin
Substrate(Connect to GND)
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Datasheet
BDxxHA3MEFJ-M
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Power supply voltage
EN voltage
Power dissipation
HTSOP-J8
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Symbol
VCC
VEN
Limits
10.0 *1
10.0
Unit
V
V
Pd*2
2110 *2
mW
Topr
Tstg
Tjmax
-40 to +105
-55 to +150
+150
℃
℃
℃
*1 Not to exceed Pd
*2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
●Recommended Operating Ratings (Ta=25℃)
Parameter
Input power supply voltage
EN voltage
Output voltage setting range
Output current
Symbol
VCC
VEN
VO
IO
Min.
4.5
0.0
1.5
0.0
Max.
8.0
8.0
7.0
0.3
Unit
V
V
V
A
●Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ)
Parameter
Symbol
Circuit current at shutdown
mode
ISD
Bias current
ICC
Line regulation
Reg.I
Load regulation
Reg IO
Minimum dropout Voltage
VCO
Output reference voltage
(Variable type)
VFB
Output voltage(Fixed type)
VO
EN Low voltage
VEN(Low)
EN High voltage
VEN(High)
EN Bias current
IEN
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TSZ22111･15･001
Temp
Min.
Typ.
Max.
25℃
-40~105℃
25℃
-40~105℃
25℃
-40~105℃
25℃
-40~105℃
25℃
-40~105℃
25℃
-40~105℃
25℃
-40~105℃
0.792
0.776
VO×0.99
Vo×0.97
0
600
25
25
0.6
0.800
VO
Vo
5
5
900
1200
50
50
75
75
0.9
1.2
0.808
0.824
VO×1.01
Vo×1.03
25℃
-40~105℃
25℃
0
0
2.4
-
0.8
0.8
8.0
-40~105℃
25℃
-40~105℃
2.4
1
-
3
-
8.0
9
9
4/21
Unit
Conditions
μA
VEN=0V, OFF mode
μA
mV VCC =( Vo+0.9V )→8.0V
mV IO=0→0.3A
V
VCC=5V, IO=0.3A
V
IO=0mA
V
IO=0mA
V
V
µA
TSZ02201-0R6R0AN00250-1-2
2012.8.31 Rev.001
Datasheet
BDxxHA3MEFJ-M
●Typical Performance Curves
(Unless otherwise noted, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)
Vo
50mV/div
Vo
50mV/div
T.B.D
IIo
O
0.2A/div
IoIO
0.2A/div
10usec/div
10usec/div
Fig.4
Transient Response
(0→0.3A)
Co=1µF, Ta=25°C
Fig.3
Transient Response
(0→0.3A)
Co=1µF, Ta=-40°C
VEN
Vo
50mV/div
VEN
Vo
50mV/div
VCC
T.B.D
VCC
Io
0.2A/div
VO
T.B.D
Io
0.2A/div
10usec/div
2msec/div
Fig.5
Transient Response
(0→0.3A)
Co=1µF,Ta=105℃
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TSZ22111･15･001
Fig.6
Transient Response
(0.3→0A)
Co=1µF,Ta=-40℃
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Datasheet
BDxxHA3MEFJ-M
Vo
50mV/div
Vo
50mV/div
Io
0.2A/div
Io
0.2A/div
2msec/div
2msec/div
Fig.7
Transient Response
(0.3→0A)
Co=1µF,Ta=25℃
Fig.8
Transient Response
(0.3→0A)
Co=1µF,Ta=105℃
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
1msec/div
Fig.9
Input sequence 1
Co=1µF,Ta=-40℃
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TSZ22111･15･001
Fig.10
Input sequence 1
Co=1µF,Ta=25℃
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Datasheet
BDxxHA3MEFJ-M
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
40msec/div
Fig.12
OFF sequence 1
Co=1µF,Ta=-40℃
Fig.11
Input sequence 1
Co=1µF,Ta=105℃
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
40msec/div
40msec/div
Fig.13
OFF sequence 1
Co=1µF,Ta=25℃
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TSZ22111･15･001
Fig.14
OFF sequence 1
Co=1µF,Ta=105℃
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Datasheet
BDxxHA3MEFJ-M
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
1msec/div
Fig.16
Input sequence 2
Co=1µF,Ta=25℃
Fig.15
Input sequence 2
Co=1µF,Ta=-40℃
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
1msec/div
40msec/div
Fig.18
OFF sequence 2
Co=1µF,Ta=-40℃
Fig.17
Input sequence 2
Co=1µF,Ta=105℃
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Datasheet
BDxxHA3MEFJ-M
VEN
2V/div
VEN
2V/div
Vcc
5V/div
Vcc
5V/div
Vo
5V/div
Vo
5V/div
40msec/div
40msec/div
Fig.20
OFF sequence 2
Co=1µF,Ta=105℃
7.0
900.0
6.0
800.0
Icc [uA]
Vo [V]
Fig.19
OFF sequence 2
Co=1µF,Ta=25℃
5.0
700.0
600.0
4.0
500.0
3.0
-40
-15
10
35
60
85
-40
105
10
35
60
85
105
Ta [°C]
Ta [°C]
Fig.21
Ta-Vo
(Io=0mA)
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TSZ22111･15･001
-15
Fig.22
Ta-Icc
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Datasheet
BDxxHA3MEFJ-M
8.0
1.0
0.8
0.6
IEN [uA]
ISD [uA]
6.0
0.4
4.0
2.0
0.2
0.0
-40
-15
10
35
60
85
0.0
105
-40
-15
10
Ta [°C]
35
60
85
105
12
14
Ta [°C]
Fig.24
Ta-IEN
Fig.23
Ta-ISD
(VEN=0V)
5.0
4.0
T.B.D
VO[V]
ISD[µA]
ISD
[uA]
3.0
2.0
1.0
Temp=-40°C
Temp=25°C
Temp=105°C
0.0
0
IO[A]
4
6
8
10
VCC [V]
VCC [V]
Fig.25
IO-VO
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TSZ22111･15･001
2
Fig.26
Vcc-ISD
(VEN=0V)
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Datasheet
BDxxHA3MEFJ-M
6.0
4.0
VO[V]
Vo [V]
VO[V]
T.B.D
2.0
Temp=-40°C
Temp=25°C
Temp=105°C
0.0
0
2
4
6
8
10
12
14
VCC [V]
Ta[℃]
Fig.28
TSD (IO=0mA)
Fig.27
Vcc-Vo
(Io=0mA)
900.0
6.0
5.0
800.0
Temp=-40°C
Temp=25°C
Temp=105°C
Icc [uA]
700.0
T.B.D
VOVo[V]
[V]
Vo [V]
4.0
3.0
Temp=-40°C
Temp=25°C
Temp=105°C
600.0
2.0
500.0
1.0
0.0
400.0
0
0.2
0.4
0.6
0.8
0
Io [A]
0.2
0.3
Io [A]
Fig.30
Io-Icc
Fig.29
OCP
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TSZ22111･15･001
0.1
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Datasheet
PSRR[dB]
BDxxHA3MEFJ-M
IO [A]
Fig.32
PSRR(IO=0mA)
Fig.31
Operation Safety area
0.6
0.5
0.5
0.4
Vdrop [V]
Vdrop[V]
Vdrop [V]
0.4
0.3
T.B.D
0.3
0.2
Temp=-40°C
Temp=25°C
Temp=105°C
0.2
0.1
0.1
-40
-15
10
35
60
85
105
0.0
0
Ta [°C]
0.1
0.2
0.3
IO[A]
[A]
Io
Fig.33
Ta-Vdrop
（VCC=6V, Io=0.3A）
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TSZ22111･15･001
Fig.34
Minimum dropout Voltage 1
（VCC=4.5V）
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Datasheet
0.6
0.6
0.5
0.5
0.4
0.4
T.B.D
0.3
Vdrop [V]
Vdrop [V]
BDxxHA3MEFJ-M
Temp=-40°C
Temp=25°C
Temp=105°C
T.B.D
0.3
Temp=-40°C
Temp=25°C
Temp=105°C
0.2
0.2
0.1
0.1
0.0
0.0
0
0.1
0.2
0
0.3
0.1
0.2
IoIO[A]
[A]
IO [A]
Io
Fig.35
Minimum dropout Voltage 2
（VCC=6.0V）
Fig.36
Minimum dropout Voltage 3
（VCC=8.0V）
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TSZ22111･15･001
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0.3
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Datasheet
BDxxHA3MEFJ-M
●Power Dissipation
◎HTSOP-J8
4.0
Power Dissipation :Pd [W]
⑤3.76W
Measure condition: mounted on a ROHM board,
and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
・ Solder the substrate and package reverse
exposure heat radiation part
3.0
④2.11W
① IC only
θj-a=249.5℃/W
② 1-layer（copper foil are :0mm×0mm）
θj-a=153.2℃/W
③ 2-layer（copper foil are :15mm×15mm）
θj-a=113.6℃/W
④ 2-layer（copper foil are :70mm×70mm）
θj-a=59.2℃/W
⑤ 4-layer（copper foil are :70mm×70mm）
θj-a=33.3℃/W
2.0
③1.10W
1.0
②0.82W
①0.50W
0
0
25
50
75
100
125
150
Ambient 周囲温度:Ta
Temperature
[℃] :Ta [℃]
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no higher than 105℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Chip junction temperature can be determined as follows:
Calculation based on ambient temperature (Ta)
Tj=Ta+θj-a×W
＜Reference values＞
θj-a: HTSOP-J8 153.2℃/W 1-layer substrate (copper foil density 0mm×0mm)
113.6℃/W 2-layer substrate (copper foil density 15mm×15mm)
59.2℃/W 2-layer substrate (copper foil density 70mm×70mm)
4-layer substrate (copper foil density 70mm×70mm)
33.3℃/W
Substrate size: 70mm×70mm×1.6mm (substrate with thermal via)
Most of the heat loss that occurs in the BDxxHA3MEFJ-M is generated from the output Pch FET. Power loss is determined
by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage and the output
current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing in mind that
heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in
the BDxxHA3MEFJ-M make certain to factor conditions such as substrate size into the thermal design.
Power consumption[W] =
Input voltage (VCC) - Output voltage (VO) ×IO(Ave)
Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,
Power consumption[W] = 5.0V - 3.3V ×0.1A
=0.17W
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TSZ22111･15･001
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Datasheet
BDxxHA3MEFJ-M
●Input-to-Output Capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin and GND.
A capacitor, between input pin and GND, is valid when the power supply impedance is high or drawing is long. Also as for
a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes
improvement of characteristics by load change. However, please check by mounted on a board for the actual application.
Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity
decreases gradually by using conditions.
For more detail, please be sure to inquire the manufacturer, and select the best ceramic capacitor.
10
Rated Voltage：10V
B characteristics
0
Rated Voltage：10V
B1 characteristics
Capacitance Change [%]
-10
Rated Voltage：6.3V
B characteristics
-20
-30
-40
-50
Rated Voltage:10V
F characteristics
-60
Rated Voltage：4V
X6S characteristics
-70
-80
-90
-100
0
1
2
3
4
DC Bias Voltage [V]
Ceramic capacitor capacity – DC bias characteristics
(Characteristics example)
●Equivalent Series Resistance ESR (ceramic capacitor etc.)
Please attach an anti-oscillation capacitor between VO and
GND. Capacitor usually has ESR(Equivalent Series
Resistance), and operates stable in ESR-IO range, showed
right. Generally, ESR of ceramic, tantalum and electronic
capacitor etc. is different for each, so please be sure to check
a capacitor which is going to use, and use it inside the stable
operating region, showed right. Then, please evaluate for the
actual application.
ESR – IO characteristics
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TSZ22111･15･001
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Datasheet
BDxxHA3MEFJ-M
●Evaluation Board Circuit
C3
C7
1
VCC
VO
8
C2
C6
R1
C5
2
FB
N.C
7
GND
N.C
6
R2
C1
VCC
GND
3
U1
SW1
VO
4
N.C.
EN
5
EN
FIN
●Evaluation Board Parts List
Designation
R1
R2
R3
R4
R5
R6
C1
C2
C3
Value
43kΩ
8.2kΩ
‐
‐
‐
‐
1µF
‐
‐
Part No.
MCR01PZPZF4302
MCR01PZPZF8201
‐
‐
‐
‐
CM105B105K16A
‐
‐
Company Designation Value
ROHM
C4
‐
ROHM
C5
1µF
‐
C6
‐
C7
‐
‐
C8
‐
‐
C9
‐
KYOCERA
C10
‐
U1
‐
U2
‐
●Board Layout
Part No.
‐
CM105X7R105K16AB
Company
‐
KYOCERA
‐
‐
‐
‐
BD00HA3MEFJ-M
‐
‐
‐
‐
‐
ROHM
‐
EN
GND
CIN
VCC ( VIN )
R1
R2
COUT
VO
･Input capacitor CIN of VCC (VIN) should be placed very close to VCC(VIN) pin as possible, and used broad wiring pattern.
Output capacitor COUT also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
please use several through hole.
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minimum as
possible. Please be careful in wiring drawing
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting
Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2.
R1+R2
R2
（The use of resistors with R1+R2=1k to 90kΩ is recommended）
VO = VFB×
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Datasheet
BDxxHA3MEFJ-M
●I/O Equivalent Circuits (Output Voltage Vairable type)
8pin (VCC) / 1pin (VO)
8pin (VCC)
2pin (FB)
5pin (EN)
2pin (FB)
5pin (EN)
2MΩ
1MΩ
1pin (VO)
●I/O Equivalent Circuits (Output Voltage Fixed type)
8pin (VCC) / 1pin (VO)
2pin (VO_S)
5pin (EN)
8pin (VCC)
5pin (EN)
2pin (VO_S)
2MΩ
1MΩ
1pin (VO)
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Datasheet
BDxxHA3MEFJ-M
●Operational Notes
(1). Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection
devices, such as fuses.
(2). Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added.
(3). Power supply lines
Design PCB layout pattern to provide low impedance GND and supply lines. To obtain a low noise ground and supply
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply
terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic
capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.
(4). GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
(5). Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
(6). Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
(7). Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
(8). ASO
When using the IC, set the output transistor so that it does not exceed absolute maximum ratings or ASO.
(9). Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its
operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the
operation of this circuit is assumed.
BDxxHA3MEFJ-M
TSD ON Temperature[℃]
175
(typ.)
Hysteresis Temperature [℃]
15
(typ.)
(10). Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly
steps as an antistatic measure. Use similar precaution when transporting or storing the IC.
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TSZ02201-0R6R0AN00250-1-2
2012.8.31 Rev.001
Datasheet
BDxxHA3MEFJ-M
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic
diode or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND(P substrate) voltage to an input pin, should not be used.
Transistor (NPN)
Resistor
Pin A
Pin B
C
B
Pin B
E
Pin A
N
N
N
P
+
P+
P
N
Parasitic
element
P+
P substrate
Parasitic element
GND
B
N
P+
P
C
E
N
P substrate
Parasitic element
GND
GND
GND
Parasitic
element
Other adjacent elements
(12). Ground Wiring Pattern.
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
Status of this document
The Japanese version of this document is formal specification. A customer may use this translation version only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
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2012.8.31 Rev.001
Datasheet
BDxxHA3MEFJ-M
●Physical Dimension Tape and Reel Information
HTSOP-J8
<Tape and Reel information>
4°
(2.4)
3.9±0.1
6.0±0.2
8 7 6 5
+6°
−4°
1
1.05±0.2
(3.2)
0.65±0.15
4.9±0.1
(MAX 5.25 include BURR)
Tape
Embossed carrier tape
Quantity
2500pcs
Direction
of feed
E2
The direction is the 1pin of product is at the upper left when you hold
( reel on the left hand and you pull out the tape on the right hand
)
2 3 4
1PIN MARK
+0.05
0.17 -0.03
1.0MAX
0.545
S
0.08±0.08
0.85±0.05
1.27
+0.05
0.42 -0.04
0.08
M
0.08 S
1pin
(Unit : mm)
Reel
Direction of feed
∗ Order quantity needs to be multiple of the minimum quantity.
●Marking Diagram
HTSOP-J8 (TOP VIEW)
Part Number Marking
x x H A 3 M
LOT Number
1PIN MARK
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2012.8.31 Rev.001
Datasheet
BDxxHA3MEFJ-M
●Revision History
Date
Revision
31.Aug.2012
001
Changes
New Release
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Datasheet
Notice
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
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a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
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[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Notice - Rev.004
© 2013 ROHM Co., Ltd. All rights reserved.
Datasheet
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
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When disposing Products please dispose them properly using an authorized industry waste company.
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please consult with ROHM representative in case of export.
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1.
All information and data including but not limited to application example contained in this document is for reference
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2.
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third parties with respect to the information contained in this document.
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Datasheet
Other Precaution
1.
The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
2.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
3.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
4.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
5.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - Rev.004
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