ROHM 2SCR372P

Data Sheet
Midium Power Transistors (120V / 700mA)
2SCR372P
 Structure
NPN Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
MPT3
 Features
Low saturation voltage
VCE (sat) = 0.3V (Max.) (IC / IB= 500mA / 50mA)
(1)
(1) Base
(2) Collector
(3) Emitter
 Applications
Driver
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
2SCR372P
(2)
(3)
Abbreviated symbol : GX
 Inner circuit (Unit : mm)
Taping
T100
1000

(2)
(1)
hFE values are classified follows :
Item
hFE
Q
R
120 to 270 180 to 390
(1) Base
(2) Collector
(3) Emitter
(3)
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
Collector current
VEBO
6
V
DC
IC
0.7
A
Pulsed
ICP
*1
1.4
A
PD *2
0.5
W
Power dissipation
Junction temperature
Range of storage temperature
PD
Tj
Tstg
*3
2
W
150
55 to 150
C
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm)
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1/4
2011.04 - Rev.A
Data Sheet
2SCR372P
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown voltage
BVCEO
120
-
-
V
IC= 1ｍA
Collector-base breakdown voltage
BVCBO
120
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 100V
Emitter cut-off current
IEBO
-
-
1
A
VEB= 4V
VCE(sat)
-
100
300
mV
IC= -500mA, I B= 50mA
hFE
120
-
390
-
fT
-
220
-
MHz
Cob
-
8
-
pF
Collector-emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
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VCE= 5V, IC= 100mA
VCE= 5V
IE=-300mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
2011.04 - Rev.A
Data Sheet
2SCR372P
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics
Fig.1 Ground Emitter Propagation Characteristics
0.20
1000
0.8mA
VCE=5V
Pulsed
0.18
COLLECTOR CURRENT : I C[A]
COLLECTOR CURRENT : I C [mA]
1.2mA
1.6mA
2mA
Ta=125°C
75°C
25°C
-40°C
100
10
0.16
0.6mA
0.14
0.12
0.4mA
0.10
0.08
0.06
IB=0.2mA
0.04
0.02
Ta=25°C
0.00
1
0
0.5
1
0.0
1.5
1.0
BASE TO EMITTER VOLTAGE :VBE[V]
Fig.3 DC Current Gain vs. Collector Current(Ⅰ)
Fig.4 DC Current Gain vs. Collector Current(Ⅱ)
1000
1000
VCE=5V
Pulsed
100
DC CURRENT GAIN :hFE
DC CURRENT GAIN :hFE
Ta=25°C
Pulsed
VCE=5V
3V
10
100
Ta=125°C
75°C
25°C
-40°C
10
1
10
100
1000
1
10
COLLECTOR CURRENT :IC[mA]
100
1000
COLLECTOR CURRENT :IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ)
Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ)
1
1
Ta=25°C
Pulsed
COLLECTOR SATURATION VOLTAGE :VCE(sat)[V]
COLLECTOR SATURATION VOLTAGE :VCE(sat)[V]
2.0
COLECTOR TO EMITTER VOLTAGE:VCE[V]
0.1
IC/IB=20
10
0.01
IC/IB=10
Pulsed
0.1
Ta=125°C
75°C
25°C
-40°C
0.01
1
10
100
1000
1
COLLECTOR CURRENT :IC[mA]
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10
100
1000
COLLECTOR CURRENT :IC[mA]
3/4
2011.04 - Rev.A
Data Sheet
2SCR372P
Fig.7 Emitter input capacitance vs. Emitter-Base Voltage
Collector output capacitance vs.Collector-Base Voltage
Fig8. Gain Bandwidth Product vs. Emitter Current
1000
Ta=25°C
f=1MHz
IC=0A
TRANSITION FREQUENCY :fT[MHz]
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
1000
Cib
100
10
Cob
100
Ta=25°C
VCE=5V
f=100MHz
1
10
0.1
1
10
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
100
10
100
1000
EMITTER CURRENT :IE[mA]
Fig9. Safe Operating Area
-10
1ms
-1
10ms
COLLECTOR CURRENT : I
C
(A)
Ta=25°C
Single non repetitive pulse
100ms
-0.1
-0.01
DC
（Mounted on a ceramic board)
DC
（Mounted on a recommended land)
-0.001
-0.1
-1
-10
-100
-1000
COLLECTOR TO EMITTER VOLTAGE :VCE(V)
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4/4
2011.04 - Rev.A
Notice
Notes
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