ROHM MP6Z13

Data Sheet
Midium Power Transistors (±50V / ±3A)
MP6Z13
 Structure
NPN/PNP Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
MPT6
(Dual)
 Features
1) Low saturation voltage, typically
V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA)
V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA)
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
2) High speed switching
 Applications
Low Frequency Amplifier
Driver
 Packaging specifications
Type
Emitter
Base
Collector
Emitter
Base
Collector
(6)
(5)
(4)
(1)
(2)
(3)
 Inner circuit (Unit : mm)
Package
MPT6
Code
TR
Basic ordering unit (pieces) 1000
(6)
 Absolute maximum ratings (Ta = 25C)
<Tr.1>
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
50
6
3
6
V
V
A
A
Symbol
Limits
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
IC
ICP *1
-50
-6
V
V
-3
-6
A
A
Collector current
DC
Pulsed
VEBO
IC
ICP *1
(1) Tr.1
(2) Tr.1
(3) Tr.2
(4) Tr.2
(5) Tr.2
(6) Tr.1
Emitter
Base
Collector
Emitter
Base
Collector
(5)
(4)
Tr.2
Tr.1
(1)
(2)
(3)
<Tr.2>
Parameter
Collector current
DC
Pulsed
<Tr.1 and Tr.2>
Parameter
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Limits
Unit
PD
2.0
1.4
W/Total
W/Element
*2
PD *2
Tj
150
Tstg
-55 to 150
C
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board.
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© 2011 ROHM Co., Ltd. All rights reserved.
1/7
2011.02 - Rev.A
MP6Z13
Data Sheet
Electrical characteristics (Ta = 25°C)
<Tr.1>
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
-
V
IC= 100μA
Emitter-base breakdown voltage
Parameter
Conditions
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 50V
Emitter cut-off current
IEBO
A
VEB= 4V
Collector-emitter staturation voltage
DC current gain
Transition frequency
-
-
1
*1
VCE(sat)
-
130
350
hFE
180
-
450
-
-
320
-
MHz
13
-
pF
fT
*1
mV IC= 1A, IB= 50mA
VCE= 3V, IC= 50mA
VCE= 10V
IE=-500mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
Collector output capacitance
Cob
-
Turn-on time
ton *2
-
50
-
ns
Storage time
tstg *2
-
450
-
ns
-
80
-
ns
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
-50
-
-
V
IC= -1mA
Collector-base breakdown voltage
BVCBO
-50
-
-
V
IC= -100μA
Emitter-base breakdown voltage
BVEBO
-6
-
-
V
IE= -100μA
Collector cut-off current
ICBO
-
-
-1
A
VCB= -50V
Emitter cut-off current
IEBO
-
-
-1
A
VEB= -4V
*1
VCE(sat)
-
-200
-400
hFE
180
-
450
-
VCE= -3V, I C= -50mA
-
300
-
MHz
VCE= -10V
IE=500mA, f=100MHz
tf
Fall time
*2
IC= 1.5A, I B1= 150mA,
IB2=-150mA, V CC~
_ 10V
*1 Pulsed
*2 See switching time test circuit
<Tr.2>
Parameter
Collector-emitter staturation voltage
DC current gain
Transition frequency
fT
*1
mV IC= -1A, I B= -50mA
Collector output capacitance
Cob
-
24
-
pF
Turn-on time
ton *2
-
45
-
ns
Storage time
tstg *2
-
250
-
ns
-
35
-
ns
Fall time
tf
*2
Conditions
VCB= -10V, I E=0A
f=1MHz
IC= -1.5A, I B1= -150mA,
IB2=150mA, VCC ~
_ -10V
*1 Pulsed
*2 See switching time test circuit
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© 2011 ROHM Co., Ltd. All rights reserved.
2/7
2011.02 - Rev.A
Data Sheet
MP6Z13
Electrical characteristic curves (Ta=25C)
〈Tr.1〉
Fig.2 DC Current Gain vs. Collector Current ( I )
Fig.1 Typical Output Characteristics
5mA 3.0mA
2.5mA
1000
0.5
Ta=25°C
2.0mA
1.5mA
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
0.4
0.3
1.0mA
0.2
VCE=5V
3V
100
IB=0.5mA
0.1
Ta=25°C
0.0
10
0
0.5
1
1.5
2
1
10
Fig3. DC Current Gain vs. Collector Current ( II )
10000
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
1000
1
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
VCE=3V
DC CURRENT GAIN : hFE
1000
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE :VCE[V]
Ta=125°C
75°C
25°C
-40°C
100
10
Ta=25°C
0.1
IC/IB=50
20
10
0.01
0.001
1
10
100
1000
10000
1
10
COLLECTOR CURRENT : IC[mA]
100
1000
10000
COLLECTOR CURRENT : IC[mA]
Fig.6 Ground Emitter Propagation Characteristics
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
10000
1
VCE=3V
COLLECTOR CURRENT : IC[mA]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
100
0.1
Ta=125°C
75°C
25°C
-40°C
0.01
1000
Ta=125°C
75°C
25°C
-40°C
100
10
IC/IB=20
0.001
1
1
10
100
1000
0
10000
0.4
0.6
0.8
1
1.2
1.4
BASE TO EMITTER VOLTAGE : VBE[V]
COLLECTOR CURRENT : IC[mA]
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© 2011 ROHM Co., Ltd. All rights reserved.
0.2
3/7
2011.02 - Rev.A
Data Sheet
MP6Z13
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.8 Gain BandwidthProduct vs. Emitter Current
1000
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
Ta=25°C
VCE=10V
TRANSITION FREQUENCY : fT[MHz]
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
1000
100
10
Cob
1
100
10
0.1
1
10
100
10
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
100
1000
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
COLLECTOR CURRENT : IC [A]
1ms
10ms
1
100ms
0.1
DC
(Mounted on a ceramic board)
0.01
Ta=25°C
When one element operated
Single non repetitive pulse
0.001
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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4/7
2011.02 - Rev.A
Data Sheet
MP6Z13
〈Tr.2〉
Fig.1 Typical Output Characteristics
-5.0mA -4.0mA
Fig.2 DC Current Gain vs. Collector Current ( I )
-3.0mA
-0.5
1000
Ta=25°C
-2.5mA
-2.0mA
-0.3
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
-0.4
-1.5mA
-0.2
-1.0mA
-0.1
100
VCE= -5V
-3V
IB=-0.5mA
10
0.0
0
-0.5
-1
-1.5
-1
-2
-10
Fig.3 DC Current Gain vs. Collector Current ( II )
-10000
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
-1
1000
100
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
VCE= -3V
DC CURRENT GAIN : hFE
-1000
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
-0.1
IC/IB=50
20
10
-0.01
-0.001
10
-1
-10
-100
-1000
-1
-10000
-10
-100
-1000
-10000
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC[mA]
Fig.6 Ground Emitter Propagation Characteristics
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
-1
-10000
VCE= -3V
COLLECTOR CURRENT : IC[mA]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
-100
-0.1
Ta=125°C
75°C
25°C
-40°C
-0.01
-1000
Ta=125°C
75°C
25°C
-40°C
-100
-10
IC/IB=20
-1
-0.001
-1
-10
-100
-1000
0
-10000
COLLECTOR CURRENT : IC[mA]
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© 2011 ROHM Co., Ltd. All rights reserved.
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
BASE TO EMITTER VOLTAGE : VBE[V]
5/7
2011.02 - Rev.A
Data Sheet
MP6Z13
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
Ta=25°C
f=1MHz
IE=0A
IC=0A
Cib
Ta=25°C
VCE= -10V
TRANSITION FREQUENCY : fT[MHz]
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
1000
100
Cob
10
1
-0.1
100
10
-1
-10
-100
10
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
100
1000
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
-10
1ms
COLLECTOR CURRENT : IC[A]
10ms
-1
100ms
-0.1
DC
(Mounted on a ceramic board)
-0.01
Ta=25°C
When one element operated
Single non repetitive pulse
-0.001
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
6/7
2011.02 - Rev.A
MP6Z13
Data Sheet
Switching time test circuit
RL=6.8Ω
<Tr.1>
I B1
VIN
IC
VCC ~
_ 10V
IB2
Pw ~
_50μs
DUTY CYCLE≦1%
Pw
BASE CURRENT WAVEFORM
IB1
IB2
COLLECTOR CURRENT WAVEFORM
t on
tstg
tf
90%
IC
10%
<Tr.2>
RL=6.8Ω
IB1
VIN
Pw
IC
VCC~_ -10V
IB2
_ 50μs
Pw ~
DUTY CYCLE≦1%
IB2
BASE CURRENT WAVEFORM
IB1
ton
COLLECTOR CURRENT WAVEFORM
tstg
tf
90%
IC
10%
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© 2011 ROHM Co., Ltd. All rights reserved.
7/7
2011.02 - Rev.A
Notice
Notes
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R1120A