ROHM RSB27K2

Data Sheet
Bi direction ESD Protection Diode
RSB27K2
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.6
(3)
0.15±0.05
1.25±0.1
(2)
0.05
2.1±0.1
lFeatures
1)Small mold type. (UMD4)
2)High reliability.
3)Bi direction.
0.9MIN.
0.7
2.0±0.2
各リードとも
0.25± 0.1 Each
lead has same dimension
0.05
同寸法
1.3
0～0.1
(1)
0.65
lConstruction
Silicon epitaxial planer
UMD4
0.1Min
(4)
0.65
1.6
lApplications
ESD Protection
0.7
1.3±0.1
0.9±0.1
lStructure
ROHM : UMD4
JEDEC : SOT-343
JEITA : SC-82
dot (year week factory)
1Pin Mark
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Power dissipation (*)
Pd
Junction temperature
Tj
Storage temperature
Tstg
(*) Total two elements
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VZ
Zener voltage
Reverse current
Junction capacitance
Limits
200
150
Unit
ｍＷ
C
C
-55 to +150
Min.
Typ.
Max.
Unit
26.2
-
32.0
V
IR
-
-
0.1
μＡ
Ct
-
-
30
pF
Conditions
IZ=1mA
VR=24V
VR=0V , f=1MHz
* Zener voltage (Vz) shall be measured at 40ms after loading current. Rating of per diode
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1/4
2011.10 - Rev.A
Data Sheet
RSB27K2
10
10
apply voltage
apply voltage
1
ZENER CURRENT:Iz(mA)
ZENER CURRENT:Iz(mA)
Ta=125°C
1
Ta=25°C
0.1
Ta=75°C
0.01
0.1
0.01
Ta=75°C
Ta=-25°C
Ta=-25°C
0.001
0.001
25
26
27
28
29
30
31
32
33
34
35
25
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
1000
REVERSE CURRENT:IR (nA)
REVERSE CURRENT:IR (nA)
10
Ta=125°C
1
Ta=75°C
0.1
0.01
26
27
28
29
30
31
32
33
34
35
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
apply voltage
100
apply voltage
100
Ta=125°C
10
Ta=75°C
1
0.1
Ta=25°C
0.001
Ta=25°C
0.01
0
5
10
15
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS(1)
25
0
100
5
10
15
20
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS(2)
25
100
f=1MHz
f=1MHz
apply voltage
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
apply voltage
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125°C
Ta=25°C
10
1
10
1
0
1
2
3
4
0
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© 2011 ROHM Co., Ltd. All rights reserved.
1
2
3
4
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
2/4
2011.10 - Rev.A
31.0
2
Ta=25°C
IZ=1mA
n=30pcs
30.8
apply voltage
30.7
30.6
30.5
AVE:30.25V
AVE:30.58V
30.4
Ta=25°C
VR=24V
n=30pcs
1.8
REVERSE CURRENT:IR(nA)
30.9
ZENER VOLTAGE:Vz(Ｖ)
Data Sheet
RSB27K2
30.3
apply voltage
1.6
1.4
AVE:0.97nA
1.2
AVE:0.74nA
1
0.8
0.6
30.2
0.4
30.1
0.2
30.0
0
apply voltage
apply voltage
IR DISPERSION MAP
Vz DISPERSION MAP
1000
apply voltage
Ta=25°C
f=1MHz
VR=0V
n=10pcs
8.9
8.8
DYNAMIC IMPEDANCE:Zz(Ω)
CAPACITANCE BETWEENTERMINALS:Ct(pF)
9
8.7
8.6
8.5
AVE：8.52pF
8.4
8.3
apply voltage
AVE：8.53pF
apply voltage
100
8.2
8.1
10
8
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(1)
Ct DISPERSION MAP
1000
1000
apply voltage
On glass-epoxy substrate
TRANSIENT
THERMAL IMPEDANCE：Rth (°C/W)
DYNAMIC IMPEDANCE:Zz(Ω)
10
100
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(2)
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© 2011 ROHM Co., Ltd. All rights reserved.
10
3/4
Rth(j-c)
10
1
0.001
10
0.1
100
Rth(j-a)
0.01
0.1
1
10
TIME(s)
Rth-t CHARACTERISTICS
100
1000
2011.10 - Rev.A
Data Sheet
RSB27K2
30
30
No break at 30kV
20
15
10
No break at 30kV
25
AVE:28.9kV
AVE：6.0kV
apply voltage
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
25
5
0
20
15
AVE：9.0kV
10
apply voltage
5
C=200pF
R=0Ω
C=150pF
R=330Ω
0
C=100pF
R=1.5kΩ
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP(2)
ESD DISPERSION MAP(1)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A