MHW9188N - Freescale Semiconductor

Freescale Semiconductor
Technical Data
Document Number: MHW9188N
Rev. 4, 4/2006
MHW9188N
Features
• Specified for 79 - , 112 - and 132 - Channel Loading
• Excellent Distortion Performance
• Higher Output Capability
• Built - in Input Diode Protection
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
Applications
• CATV Systems Operating in the 40 to 870 MHz Frequency Range
• Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply, 40 to 870 MHz, CATV GaAs Forward Power Doubler
Amplifier Module
• Replaced MHW9188. There are no form, fit or function changes with this
part replacement.
• RoHS Compliant
870 MHz
20.3 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
RF Voltage Input (Single Tone)
Vin
+75
dBmV
DC Supply Voltage
VCC
+26
Vdc
Operating Case Temperature Range
TC
- 20 to +100
°C
Storage Temperature Range
Tstg
- 40 to +100
°C
Table 2. ESD Maximum Ratings
Rating
Input Value
Output Value
Unit
300
300
V
2
2
kV
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted)
Characteristic
Frequency Range
Symbol
Min
Typ
Max
Unit
BW
40
—
870
MHz
Power Gain
870 MHz
Gp
19.7
20.3
20.9
dB
Slope
40 - 870 MHz
S
0
0.5
1.0
dB
Gain Flatness (40 - 870 MHz, Peak - to - Valley)
GF
—
—
0.5
dB
Return Loss — Input
(Zo = 75 Ohms)
IRL
20
18
16
—
—
—
—
—
—
20
18
—
—
—
—
Return Loss — Output
(Zo = 75 Ohms)
40 - 500 MHz
501 - 750 MHz
751 - 870 MHz
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
dB
ORL
40 - 160 MHz
f > 160 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Gallium Arsenide
CATV Amplifier Module
dB
MHW9188N
1
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
CSO132
CSO112
CSO79
CSO112
CSO112
CSO112
CSO79
CSO79
CSO79
—
—
—
—
—
—
—
—
—
- 64
- 66
- 70
- 65
- 64
- 63
- 69
- 74
- 73
- 62
- 64
- 68
- 63
- 62
- 61
- 67
- 72
- 71
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
XMD132
XMD112
XMD79
XMD112
XMD112
XMD112
XMD79
XMD79
XMD79
—
—
—
—
—
—
—
—
—
- 57
- 59
- 62
- 53
- 55
- 58
- 60
- 62
- 67
- 55
- 57
- 60
- 51
- 53
- 56
- 47
- 60
- 65
Composite Triple Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
CTB132
CTB112
CTB79
CTB112
CTB112
CTB112
CTB79
CTB79
CTB79
—
—
—
—
—
—
—
—
—
- 58
- 62
–68
- 60
- 61
- 64
- 66
- 71
- 74
- 56
- 60
- 66
- 58
- 59
- 62
- 64
- 69
- 72
NF
—
—
—
—
4.0
4.0
4.0
4.0
4.5
4.5
4.5
4.5
dB
IDC
410
425
440
mA
Noise Figure
DC Current (VDC = 24 V, TC = 45°C)
dBc
dBc
dBc
50 MHz
550 MHz
750 MHz
870 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Characteristic
MHW9188N
2
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
Z
0.010
M
T F
M
A
M
V
J
F
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
Q
2X
R
F
2X 6−32UNC−2B
L
ARCHIVE INFORMATION
2X
0.010
U
Z T A
M
M
E
1 2
3
5
7 8 9
C
N
K
E
4X
2X
0.010
M
Z T A
G
7X
P
D
0.020
Y
INCHES
MIN
MAX
−−− 1.775
−−− 1.085
−−− 0.840
0.015
0.021
0.465
0.510
0.300
0.325
0.100 BSC
0.156 BSC
0.315
0.355
1.000 BSC
0.165 BSC
0.100 BSC
0.148
0.168
−−− 0.600
1.500 BSC
0.200 BSC
−−− 0.250
0.435
−−−
0.400 BSC
0.152
0.163
0.009
0.011
Z
X
T
W
DIM
A
B
C
D
E
F
G
J
K
L
N
P
Q
R
S
U
V
W
X
Y
Z
X
M
T A
M
X
M
CASE 1302 - 01
ISSUE E
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
7.
8.
9.
RF INPUT
GROUND
GROUND
DELETED
VDC
DELETED
GROUND
GROUND
RF OUTPUT
MILLIMETERS
MIN
MAX
−−− 45.085
−−− 27.559
−−− 21.336
0.381
0.533
11.811 12.954
7.62
8.255
2.540 BSC
3.962 BSC
8.001
9.017
25.400 BSC
4.191 BSC
2.540 BSC
3.759
4.267
−−− 15.24
38.100 BSC
5.080 BSC
−−− 6.350
11.049
−−−
10.160 BSC
3.861
4.140
0.229
0.279
ARCHIVE INFORMATION
A
S
B
A
MHW9188N
RF Device Data
Freescale Semiconductor
3
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
How to Reach Us:
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHW9188N
Document Number: MHW9188N
4Rev. 4, 4/2006
RF Device Data
Freescale Semiconductor