A Business Partner of Renesas Electronics Corporation. Preliminary NX6351GP Series LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8 Gb/s CPRI and 10G E-PON ONU APPLICATION Data Sheet R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 DESCRIPTION The NX6351GP series is a 1 270/1 290/1 310/1 330/1 350 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATIONS • 9.8 Gbps CPRI • 10G E-PON ONU FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 PO = 8.5 mW Ith = 7 mA ηd = 0.35 W/A TC = −40 to +85°C φ 5.6 mm 10.2 mm Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6351GP Series Chapter Title PACKAGE DIMENSIONS (UNIT: mm) (φ 5.6) *2 (φ 4.3) *2 (φ 3.75) *2 1.0±0.1 110°±2° (0.3) *2 BOTTOM VIEW 1 *2 4 2 (0.3) *1 Δ x = ±200 μ m MAX. Δ y = ±200 μ m MAX. 3.97±0.15 10.2+/-0.5 7.5±0.5 Focal Point 3 PIN CONNECTIONS 1 LD 4 1.2±0.1 2 Reference Plane 15.0±1.0 3 PD 4– φ 0.45 φ 2.0 P.C.D *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 Page 2 of 5 A Business Partner of Renesas Electronics Corporation. NX6351GP Series Chapter Title ORDERING INFORMATION Part Number Package NX6351GPxx∗1$=SLQ&$1ZLWKDVSKHULFDOOHQVFDS Pin Connections 1 2 LD 4 3 PD Note: 1. The last two digits (”xx”) of Part Number indicates Wavelength Code. The relationships between the code and wavelength are as follows. WAVELENGTH CODE 27 29 31 33 35 WAVELENGTH (nm) 1 270 1 290 1 310 1 330 1 350 Remarks 1. The color of lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 Page 3 of 5 A Business Partner of Renesas Electronics Corporation. NX6351GP Series Chapter Title ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Optical Output Power Forward Current of LD Reverse Voltage of LD Forward Current of PD Reverse Voltage of PD Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol PO IF VR IF VR TC Tstg Tsld RH Ratings 15 120 2.0 10.0 15 −40 to +85 −40 to +95 350 (3 sec.) 85 Unit mW mA V mA V °C °C °C % RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL Parameter Bias Current Symbol Ibias Conditions TC = 25°C TC = 85°C MIN. − − TYP. 30 − MAX. − 70 Unit mA ELECTRO-OPTICAL CHARACTERISTICS (TC = −40 to +85°C, CW, BOL, unless otherwise specified) Parameter Signaling Rate Optical Output Power Operating Voltage Threshold Current Symbol Differential Efficiency ηd Peak Emission Wavelength λp Side Mode Suppression Ratio Rise Time Fall Time Monitor Current Monitor Dark Current Monitor PD Terminal Capacitance Note: 1. PO Vop Ith SMSR tr tf Im ID Ct Conditions PO = 8.5 mW, TC = 25°C PO = 8.5 mW PO = 8.5 mW NX6351GP27 NX6351GP29 NX6351GP31 NX6351GP33 MIN. − − − − − 0.23 0.13 1 260 1 280 1 300 1 320 TYP. 9.8304 8.5 − 7 − − − − − − − MAX. − − 2.0 15 30 − − 1 280 1 300 1 320 1 340 NX6351GP35 PO = 8.5 mW 20-80% ∗1 80-20% ∗1 VR = 1.5 V, PO = 8.5 mW VR = 3.3 V, TC = 25°C VR = 3.3 V VR = 3.3 V, f = 1 MHz 1 340 35 − − 100 − − − − − − − − − − 1 360 − 50 50 1 000 10 100 20 PO = 8.5 mW TC = 25°C Unit Gb/s mW V mA W/A nm dB ps ps μA nA pF 9.8304 Gb/s, PRBS 231 −1, NRZ, Duty Cycle = 50% R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 Page 4 of 5 A Business Partner of Renesas Electronics Corporation. NX6351GP Series Chapter Title SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0087EJ0100 Rev.1.00 Feb 25, 2013 Page 5 of 5 Revision History NX6351GP Series Data Sheet Rev. Date Page 1.00 Feb 25, 2013 − Description Summary First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1